公开(公告)号：WO1983001865A1

公开(公告)日：1983-05-26

申请号：PCT/US1982001640

申请日：1982-11-19

Applicant: CHRONAR CORPORATION

Inventor： CHRONAR CORPORATION ,  DALAL, Vikram L. ,  AKHTAR, M. ,  GAU, Shek-Chung ,  RAMAPRASAD, Kackadasam, R.

IPC: H01L21/205

CPC classification number: H01L29/1604 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

Abstract: Method of producing amorphous semiconductor hydrides (hydrogenated amorphous semiconductors) with specified bandgaps. The desired bandgap is achieved by controlling the temperature and partial pressure of higher order semiconductanes which are introduced into, for example, in a hotwall epitaxial reactor, to create a deposit on a substrate held in the reactor, said deposit being created by pyrolytic decomposition of said semiconductanes.

Abstract translation: 制造具有规定带隙的非晶半导体氢化物（氢化非晶半导体）的方法。 所需的带隙通过控制被引入例如在热壁外延反应器中的高级半导体的温度和分压来在保持在反应器中的基板上产生沉积物，所述沉积物是通过热解分解 所述半导体。