公开(公告)号：WO2018236682A1

公开(公告)日：2018-12-27

申请号：PCT/US2018/037760

申请日：2018-06-15

Applicant: CREE, INC.

Inventor： LIU, Yueying ,  SRIRAM, Saptharishi ,  SHEPPARD, Scott

IPC: H01L29/778 ,  H01L29/423 ,  H01L29/47 ,  H01L29/20 ,  H03F1/32 ,  H01L29/10

Abstract: A semiconductor device includes a plurality of unit cell transistors on a common semiconductor structure, the unit cell transistors electrically connected in parallel, and each unit cell transistor including a respective gate finger. Respective threshold voltages of first and second of the unit cell transistors differ by at least 0.1 volts and/or threshold voltages of first and second segments of a third of the unit cell transistors differ by at least 0.1 volts.

公开(公告)号：WO2020106537A1

公开(公告)日：2020-05-28

申请号：PCT/US2019/061371

申请日：2019-11-14

Applicant: CREE, INC.

Inventor： LIU, Yueying ,  SRIRAM, Saptharishi ,  SHEPPARD, Scott ,  GAO, Jennifer

IPC: H03F1/32 ,  H03F3/195 ,  H03F3/21 ,  H03F1/02 ,  H03F3/42 ,  H01L27/085 ,  H01L29/423 ,  H01L29/778 ,  H01L29/20

Abstract: A semiconductor device includes a plurality of unit cell transistors on a common semiconductor structure, the unit cell transistors electrically connected in parallel, and each unit cell transistor including a respective gate finger. Respective threshold voltages of first and second of the unit cell transistors differ by at least 0.1 volts and/or threshold voltages of first and second segments of a third of the unit cell transistors differ by at least 0.1 volts.