公开(公告)号：WO2018136466A1

公开(公告)日：2018-07-26

申请号：PCT/US2018/013970

申请日：2018-01-17

Applicant: ENTEGRIS, INC.

Inventor： COOPER, Emanuel I. ,  PAYNE, Makonnen ,  KIM, WonLae ,  HONG, Eric ,  TU, Sheng-Hung ,  WANG, Chieh Ju ,  HSU, Wisma

IPC: C23G1/24 ,  C23G1/20 ,  H01L21/02 ,  H01L21/768 ,  C11D11/00 ,  G03F7/42 ,  C23G1/18 ,  C23G1/26 ,  C09K13/08

Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.

公开(公告)号：WO2019051053A1

公开(公告)日：2019-03-14

申请号：PCT/US2018/049701

申请日：2018-09-06

Applicant: ENTEGRIS, INC.

Inventor： COOPER, Emanuel ,  BILODEAU, Steven ,  DAI, Wen-Haw ,  YANG, Min-Chieh ,  TU, Sheng-Hung ,  WU, Hsing-Chen ,  KIM, Sean ,  HONG, SeongJin

IPC: C09K13/08 ,  C09K13/06

Abstract: Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.

公开(公告)号：WO2015095175A8

公开(公告)日：2015-06-25

申请号：PCT/US2014/070566

申请日：2014-12-16

Applicant: ENTEGRIS, INC. ,  ATMI TAIWAN CO., LTD.

Inventor： BILODEAU, Steven ,  BARNES, Jeffrey A. ,  COOPER, Emanuel, I. ,  WU, Hsing-Chen ,  YANG, Min-Chieh ,  TU, Sheng-Hung ,  PARSON, Thomas

IPC: H01L21/18 ,  H01L21/306

Abstract: Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.