公开(公告)号：WO2017091572A1

公开(公告)日：2017-06-01

申请号：PCT/US2016/063323

申请日：2016-11-22

Applicant: ENTEGRIS, INC.

Inventor： BILODEAU, Steven ,  COOPER, Emanuel I.

IPC: H01L21/02 ,  C09K13/08 ,  H01L21/225 ,  H01L21/04

CPC classification number: C09K13/08 ,  H01L21/32134 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

Abstract: A removal composition and process for selectively removing p-doped polysilicon (e.g., boron-doped polysilicon) relative to silicon nitride from a microelectronic device having said material thereon. The substrate preferably comprises a high-k/metal gate integration scheme.

Abstract translation: 用于从其上具有所述材料的微电子器件选择性地去除相对于氮化硅的p掺杂多晶硅（例如硼掺杂多晶硅）的去除组合物和工艺。 衬底最好包括高k /金属栅集成方案。

公开(公告)号：WO2021211708A1

公开(公告)日：2021-10-21

申请号：PCT/US2021/027286

申请日：2021-04-14

Applicant: ENTEGRIS, INC.

Inventor： DAS, Atanu K. ,  WHITE, Daniela ,  COOPER, Emanuel I. ,  HONG, Eric ,  YANG, JeongYeol ,  YEO, Juhee ,  WHITE, Michael L. ,  HONG, SeongJin ,  CHAE, SeungHyun ,  LIPPY, Steven A. ,  KIM, WonLae

IPC: C23F1/38 ,  C23F11/14

Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 Å/min.

公开(公告)号：WO2018136466A1

公开(公告)日：2018-07-26

申请号：PCT/US2018/013970

申请日：2018-01-17

Applicant: ENTEGRIS, INC.

Inventor： COOPER, Emanuel I. ,  PAYNE, Makonnen ,  KIM, WonLae ,  HONG, Eric ,  TU, Sheng-Hung ,  WANG, Chieh Ju ,  HSU, Wisma

IPC: C23G1/24 ,  C23G1/20 ,  H01L21/02 ,  H01L21/768 ,  C11D11/00 ,  G03F7/42 ,  C23G1/18 ,  C23G1/26 ,  C09K13/08

Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.

公开(公告)号：WO2016003729A1

公开(公告)日：2016-01-07

申请号：PCT/US2015/037457

申请日：2015-06-24

Applicant: ENTEGRIS, INC.

Inventor： SONG, Lingyan ,  LIPPY, Steven ,  COOPER, Emanuel I.

IPC: H01L21/027

CPC classification number: H01L21/02068 ,  B08B3/08 ,  C11D1/008 ,  C11D1/667 ,  C11D3/042 ,  C11D3/046 ,  C11D3/245 ,  C11D3/30 ,  C11D3/361 ,  C11D3/3707 ,  C11D3/43 ,  C11D7/08 ,  C11D7/10 ,  C11D7/28 ,  C11D11/0047 ,  H01L21/02063

Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.

Abstract translation: 用于从其上具有所述残余物的微电子器件清洁后等离子体蚀刻残留物的清洁组合物和方法。 该组合物可实现对来自微电子器件的残余物质（包括含钛，含铜，含钨和/或含钴）蚀刻后残留物的高效清洁，同时不损坏层间电介质，金属互连材料， 和/或也存在于其上的封盖层。

公开(公告)号：WO2020123126A1

公开(公告)日：2020-06-18

申请号：PCT/US2019/062835

申请日：2019-11-22

Applicant: ENTEGRIS, INC.

Inventor： LIPPY, Steven ,  COOPER, Emanuel I.

IPC: C09K13/06 ,  H01L21/306 ,  H01L21/3213

Abstract: The invention provides compositions useful for selectively etching ruthenium and/or copper. The compositions comprise certain periodate compounds, alkylammonium or alkylphosphonium hydroxides, carbonate or bicarbonate buffers, and water, wherein the pH of the composition is about 9 to about 12.5. The compositions of the invention are effectively utilized in the method of the invention and have been found to be capable of etching Cu and Ru at similar rates, i.e., >20 /min, while minimizing etch rates of dielectrics (

公开(公告)号：WO2022026822A1

公开(公告)日：2022-02-03

申请号：PCT/US2021/043894

申请日：2021-07-30

Applicant: ENTEGRIS, INC.

Inventor： WU, Hsing-Chen ,  COOPER, Emanuel I. ,  YANG, Min-Chieh

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/033 ,  H01L21/3213

Abstract: Provided are compositions and methods useful in etching, i.e., removing amorphous carbon hard masks which have been doped with elements such as boron, chlorine, or nitrogen. The compositions utilize concentrated sulfuric acid, water, and at least one oxidizing agent. In the operation of the method, the composition selectively removes the doped hard mask layer, even in the presence of layers such as silicon dioxide, silicon nitride, tantalum nitride, and polysilicon, with good selectivity.

公开(公告)号：WO2022026739A1

公开(公告)日：2022-02-03

申请号：PCT/US2021/043744

申请日：2021-07-29

Applicant: ENTEGRIS, INC.

Inventor： BILODEAU, Steven M. ,  COOPER, Emanuel I. ,  WHITE, Daniela

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3205 ,  C09K13/04

Abstract: Provided are wet etching compositions and methods for etching a surface of a microelectronic device that contains silicon nitride (SiN), silicon oxide, and polysilicon which in one embodiment is in contact with a surface comprising a compound which is electrochemically more noble than silicon, and optionally other materials which may include a conductive material, a semiconducting material, or an insulating material useful in a microelectronic device, or a processing material that is useful in preparing a microelectronic device.

公开(公告)号：WO2020102228A1

公开(公告)日：2020-05-22

申请号：PCT/US2019/060974

申请日：2019-11-12

Applicant: ENTEGRIS, INC.

Inventor： BILODEAU, Steven M. ,  HONG, SeongJin ,  WU, Hsing-Chen ,  YANG, Min-Chieh ,  COOPER, Emanuel I.

IPC: C09K13/06 ,  C09K13/08 ,  H01L21/306 ,  H01L21/311

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

公开(公告)号：WO2017007893A1

公开(公告)日：2017-01-12

申请号：PCT/US2016/041271

申请日：2016-07-07

Applicant: ENTEGRIS, INC.

Inventor： BILODEAU, Steven ,  COOPER, Emanuel I.

IPC: H01L29/66 ,  H01L21/306

CPC classification number: H01L21/30604 ,  C09K13/06 ,  C09K13/08

Abstract: Compositions useful for the selective removal of silicon germanium materials relative to germanium-containing materials and silicon-containing materials from a microelectronic device having same thereon. The removal compositions include at least one diol and are tunable to achieve the required SiGe:Ge removal selectivity and etch rates.

Abstract translation: 用于相对于含锗材料和含硅材料从其上具有相同材料的微电子器件选择性去除硅锗材料的组合物。 去除组合物包括至少一种二醇，并且是可调谐的以实现所需的SiGe：Ge去除选择性和蚀刻速率。

公开(公告)号：WO2015095726A1

公开(公告)日：2015-06-25

申请号：PCT/US2014/071540

申请日：2014-12-19

Applicant: ENTEGRIS, INC.

Inventor： BILODEAU, Steven ,  COOPER, Emanuel I. ,  LEE, Jaeseok ,  KIM, WonLae ,  BARNES, Jeffrey A.

IPC: H01L21/306

CPC classification number: H01L21/31133 ,  G03F7/423 ,  H01L21/02057 ,  H01L21/0273

Abstract: A method and composition for removing bulk and/or ion-implanted resist material from microelectronic devices have been developed. The compositions effectively remove the ion-implanted resist material while not damaging the silicon-containing or germanium-containing materials.

Abstract translation: 已经开发了用于从微电子器件去除体积和/或离子注入的抗蚀剂材料的方法和组合物。 组合物有效地除去离子注入的抗蚀剂材料，同时不损害含硅或含锗材料。