公开(公告)号：WO2021180757A1

公开(公告)日：2021-09-16

申请号：PCT/EP2021/055980

申请日：2021-03-10

Applicant: EPINOVATECH AB

Inventor： OLSSON, Martin, Andreas

IPC: H03K19/17724 ,  H01L27/06

Abstract: There is provided a field-programmable gate array, FPGA, device (100) comprising a configurable logic block, CLB, (110) comprising a logic inverter (120)comprising a high-electron-mobility transistor, HEMT, (130), wherein the HEMT comprises: a Si substrate (384); an AlyGay-1N layer structure (380), wherein 0

公开(公告)号：WO2021148587A1

公开(公告)日：2021-07-29

申请号：PCT/EP2021/051422

申请日：2021-01-22

Applicant: EPINOVATECH AB

Inventor： OLSSON, Martin, Andreas

IPC: H01M4/04 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/38 ,  H01M4/62 ,  H01M4/66 ,  H01M4/70 ,  H01M10/0525 ,  H01M10/0562 ,  H01M10/058 ,  H01M4/75 ,  H01M10/0585 ,  H01M4/525 ,  H01M2300/0068 ,  H01M4/0428 ,  H01M4/386 ,  H01M4/661

Abstract: There is provided a solid-state battery layer structure (100) comprising: an anode current collector metal layer (110); an anode layer (120) arranged on the anode current collector metal layer; a solid electrolyte layer (140) arranged on the anode layer laterally; a cathode layer (150) arranged on the solid electrolyte layer; and a cathode current collector metal layer (160), and a plurality of nanowire structures (130) comprising silicon and/or gallium nitride, wherein said nanowire structures (130) are arranged on the anode layer (120) and, wherein said nanowire structures (130) are laterally and vertically enclosed by the solid electrolyte layer (140), wherein the anode layer comprises silicon and a plurality of metal vias (224) connecting the plurality of nanowire structures with the anode current collector metal layer (110). Methods for producing solid-state battery layer structures are also provided.

公开(公告)号：WO2021078863A1

公开(公告)日：2021-04-29

申请号：PCT/EP2020/079756

申请日：2020-10-22

Applicant: EPINOVATECH AB

Inventor： OLSSON, Martin, Andreas

IPC: H02M3/158 ,  H01L29/00 ,  H03K17/00 ,  H02M1/00 ,  H02M7/06 ,  H03K17/16 ,  H03K17/10

Abstract: There is provided an AC-DC converter circuit (100) for high power charging of an electrical battery. The circuit comprises an input rectifier comprising a first node and a second node. The input rectifier (110) is configured to receive an AC voltage at the first node (112) and provide a rectified voltage at the second node (114). The circuit further comprises a first transistor (120), comprising a first gate node (122), a first source node (124), and a first drain node (126). The first drain node is connected to the second node of the input rectifier. The first gate node is connected to a ground node (170). The circuit further comprises a second transistor (130), comprising a second gate node (132), a second source node (134), and a second drain node (136). The second drain node is connected to the first source node. The second transistor materially corresponds to the first transistor. The circuit further comprises a duty cycle control unit (140) connected to the second gate node for providing the second transistor with a switching waveform. The circuit further comprises an output rectifier (150) connected to the second source node or the first source node. The circuit further comprises an output electronic filter (160) connected to the second source node or an output node (151) of the output rectifier. An AC-DC converter device, a method for charging an electrical battery, and a regenerative braking system is also provided.

公开(公告)号：WO2021239876A1

公开(公告)日：2021-12-02

申请号：PCT/EP2021/064208

申请日：2021-05-27

Applicant: EPINOVATECH AB

Inventor： OLSSON, Martin, Andreas

IPC: H01L29/778 ,  H01L21/338 ,  H01L29/06 ,  H01L29/20

Abstract: There is provided a vertical high-electron-mobility transistor, HEMT (100), comprising: a drain contact(410), a nanowire layer (500) arranged on the drain contact (410) and comprising at least one vertical nanowire (510)and a supporting material (520) laterally enclosing the at least one vertical nanowire (510), a heterostructure (600) arranged on the nanowire layer and comprising an AIGaN-layer (610) and a GaN-layer (620) together forming a heterojunction, at least one source contact (420a, 420b) in contact with the heterostructure (600), and a gate contact (430) in contact with the heterostructure (600), arranged above the at least one vertical nanowire (510), wherein the at least one vertical nanowire (510) is forming an electron transport channel between the drain contact and the heterostructure. There is also provided a method for producing a vertical HEMT (100).

公开(公告)号：WO2021224322A1

公开(公告)日：2021-11-11

申请号：PCT/EP2021/061831

申请日：2021-05-05

Applicant: EPINOVATECH AB

Inventor： OLSSON, Martin, Andreas

IPC: H02P1/26 ,  H02P25/16 ,  H02P1/42

Abstract: There is provided an induction machine (100) comprising a rotor (120); a stator (140); and a phase-shift oscillator (160). The stator comprises: a first winding (141); and a second winding (142), arranged at a first angle (101) relative to said first winding. The phase-shift oscillator comprises: a transistor (170), the transistor (170) being a high-electron mobility transistor, HEMT; and a phase-shift network (180). The first winding is connected to a first node (181) of the phase-shift network and wherein the second winding is connected to a second node (182) of the phase-shift network, wherein the phase-shift oscillator is configured to provide a first phase electric signal at the first node and a second phase electric signal at the second node, wherein a difference between the first and second phase corresponds to the first angle. There is also provided an electric aircraft propulsion system comprising the induction machine.

公开(公告)号：WO2021160728A1

公开(公告)日：2021-08-19

申请号：PCT/EP2021/053310

申请日：2021-02-11

Applicant: EPINOVATECH AB

Inventor： OLSSON, Martin, Andreas

IPC: H01L21/8258 ,  H01L27/06 ,  H03F3/195 ,  H01L27/085 ,  H03F3/24

Abstract: There is provided a monolithic microwave integrated circuit, MMIC, front-end module (100) comprising: a gallium nitride structure (110) supported by a silicon substrate (120); a silicon-based transmit/receive switch (130) having a transmit mode and a receive mode; a transmit amplifier (112) configured to amplify an outgoing signal to be transmitted by said MMIC front-end module, wherein said transmit amplifier is electrically connected (132) to said transmit/receive switch, wherein said transmit amplifier comprises a gallium nitride high-electron-mobility transistor, HEMT, (114) formed in said gallium nitride structure; and a receive amplifier (113) configured to amplify an incoming signal received by said MMIC front-end module, wherein said receive amplifier is electrically connected (133) to said transmit/receive switch, wherein said receive amplifier comprises a gallium nitride HEMT (115) formed in said gallium nitride structure.

公开(公告)号：WO2021116073A1

公开(公告)日：2021-06-17

申请号：PCT/EP2020/085010

申请日：2020-12-08

Applicant: EPINOVATECH AB

Inventor： OLSSON, Martin, Andreas

IPC: H01L29/778 ,  H01L21/20 ,  H01L21/205 ,  H01L21/338 ,  H01L21/337 ,  H01L29/423 ,  H01L29/417 ,  H01L29/10 ,  H01L29/20

Abstract: There is provided a semiconductor layer structure (100) comprising: a Si substrate (102) having a top surface (104); a first semiconductor layer (110) arranged on said substrate, the first semiconductor layer comprising a plurality of vertical nanowire structures (112) arranged perpendicularly to said top surface of said substrate, the first semiconductor layer comprising AlN; a second semiconductor layer (120) arranged on said first semiconductor layer laterally and vertically enclosing said nanowire structures, the second semiconductor layer comprising AlxGa1-xN, wherein 0≤x≤0.95; a third semiconductor layer (130) arranged on said second semiconductor layer, the third semiconductor layer comprising AlyGa1-yN, wherein 0≤y≤0.95; and a fourth semiconductor layer (140) arranged on said third semiconductor layer, the fourth semiconductor layer comprising GaN. There is also provided a high-electron-mobility transistor device and methods of producing such structures and devices.