公开(公告)号：WO2020205761A1

公开(公告)日：2020-10-08

申请号：PCT/US2020/025762

申请日：2020-03-30

Applicant: FACEBOOK TECHNOLOGIES, LLC

Inventor： BROELL, Markus ,  GRUNDMANN, Michael ,  HWANG, David ,  LUTGEN, Stephan ,  MCSKIMMING, Brian Matthew ,  TYAGI, Anurag

IPC: H01L27/15 ,  H01L33/44 ,  H01L33/20

Abstract: Disclosed herein are methods, systems, and apparatuses for a light emitting diode (LED) array apparatus. In some embodiments, the LED array apparatus may include a plurality of mesas etched from a layered epitaxial structure. The layered epitaxial structure may include a P-type doped semiconductor layer, an active layer, and an N-type doped semiconductor layer. The LED array apparatus may also include one or more regrowth semiconductor layers, including a first regrowth semiconductor layer, which may be grown epitaxially over etched facets of the plurality of mesas. In some cases, for each mesa, the first regrowth semiconductor layer may overlay etched facets of the P-type doped semiconductor layer, the active layer, and the N-type doped semiconductor layer, around an entire perimeter of the mesa.