公开(公告)号：WO2021086941A1

公开(公告)日：2021-05-06

申请号：PCT/US2020/057704

申请日：2020-10-28

Applicant: FACEBOOK TECHNOLOGIES, LLC

Inventor： BROELL, Markus ,  HWANG, David ,  LESTER, Steven, David ,  TYAGI, Anurag ,  GRUNDMANN, Michael ,  LHEUREUX, Guillaume ,  TONKIKH, Alexander

IPC: H01L33/06 ,  H01L33/20 ,  H01L33/30 ,  G09F9/33 ,  H01L25/075

Abstract: A light source includes a p-type semiconductor layer (1242; 1244; 1246), an n-type semiconductor layer (1212; 1214; 1216), and an active region between the p-type semiconductor layer (1242; 1244; 1246 ) and the n-type semiconductor layer (1212; 1214; 1216 ) and configured to emit light. The active region includes a plurality of barrier layers (1232; 1234; 1236) and one or more quantum well layers (1222; 1224; 1226). The plurality of barrier layers (1232; 1234; 1236 ) of the active region includes at least one n-doped barrier layer that includes an n-type dopant. The active region is characterized by a lateral linear dimension equal to or less than about 10 pm. The n- type dopant includes, for example, silicon, selenium, or tellurium.

公开(公告)号：WO2020205761A1

公开(公告)日：2020-10-08

申请号：PCT/US2020/025762

申请日：2020-03-30

Applicant: FACEBOOK TECHNOLOGIES, LLC

Inventor： BROELL, Markus ,  GRUNDMANN, Michael ,  HWANG, David ,  LUTGEN, Stephan ,  MCSKIMMING, Brian Matthew ,  TYAGI, Anurag

IPC: H01L27/15 ,  H01L33/44 ,  H01L33/20

Abstract: Disclosed herein are methods, systems, and apparatuses for a light emitting diode (LED) array apparatus. In some embodiments, the LED array apparatus may include a plurality of mesas etched from a layered epitaxial structure. The layered epitaxial structure may include a P-type doped semiconductor layer, an active layer, and an N-type doped semiconductor layer. The LED array apparatus may also include one or more regrowth semiconductor layers, including a first regrowth semiconductor layer, which may be grown epitaxially over etched facets of the plurality of mesas. In some cases, for each mesa, the first regrowth semiconductor layer may overlay etched facets of the P-type doped semiconductor layer, the active layer, and the N-type doped semiconductor layer, around an entire perimeter of the mesa.

公开(公告)号：WO2022140172A1

公开(公告)日：2022-06-30

申请号：PCT/US2021/064005

申请日：2021-12-17

Applicant: FACEBOOK TECHNOLOGIES, LLC

Inventor： GRUNDMANN, Michael ,  TYAGI, Anurag ,  HURNI, Christophe, Antoine

IPC: H01L25/075 ,  H01L33/06 ,  H01L33/18 ,  H01L33/30

Abstract: A micro-light emitting diode (micro-LED) includes a mesa structure that includes an n-type semiconductor layer, a p-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. The active region includes at least one quantum well layer. The at least one quantum well layer has a first effective bandgap and a first stress in a center region of the at least one quantum well layer, and a second effective bandgap and a second stress in a mesa sidewall region of the at least one quantum well layer. The second stress is lower than the first stress or is opposite to the first stress. The second effective bandgap is greater than the first effective bandgap to form a lateral carrier barrier in the at least one quantum well layer.

公开(公告)号：WO2021262342A1

公开(公告)日：2021-12-30

申请号：PCT/US2021/032654

申请日：2021-05-17

Applicant: FACEBOOK TECHNOLOGIES, LLC

Inventor： TYAGI, Anurag ,  SCHELLER, Maik Andre

IPC: H01S3/109 ,  H01S5/065 ,  H01S5/14 ,  H01S5/183 ,  H01L2224/80013 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L24/80 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L33/105 ,  H01L33/20 ,  H01L33/465 ,  H01S5/0604 ,  H01S5/0657 ,  H01S5/141 ,  H01S5/142 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18333 ,  H01S5/18336 ,  H01S5/18347 ,  H01S5/18361 ,  H01S5/18388 ,  H01S5/34 ,  H01S5/423

Abstract: A semiconductor light source including a planar optical component that focuses long-wavelength (e.g., infrared) light emitted in a resonant cavity into a nonlinear crystal, which then converts the long-wavelength light into light having a shorter wavelength (e.g., visible light) by frequency doubling. A wavelength-selective reflection layer on the nonlinear crystal reflects the long-wavelength light back into the resonant cavity to form an external cavity and transmits the light having the shorter wavelength out of the external cavity. The resonant cavity includes an active region that emits the long-wavelength light at a high efficiency. The planar optical component includes a micro-lens formed in semiconductor layers or a gradient refractive index lens formed in the nonlinear crystal.

公开(公告)号：WO2021097201A1

公开(公告)日：2021-05-20

申请号：PCT/US2020/060404

申请日：2020-11-13

Applicant: FACEBOOK TECHNOLOGIES, LLC

Inventor： TYAGI, Anurag ,  BONAR, James, Ronald ,  VALENTINE, Gareth

IPC: H01L33/00 ,  H01L33/06 ,  H01L27/15 ,  H01L33/20

Abstract: LED apparatuses featuring etched mesas and techniques for manufacturing LED apparatuses are described, including techniques for reducing surface recombination and techniques for charge carrier confinement. Etched facets of an LED mesa can be passivated using epitaxial regrowth of one or more semiconductor regrowth layers. The one or more semiconductor regrowth layers can include a transition layer. The transition layer can be configured with a bandgap energy between that of layers that are on opposite sides of the transition layer. A transition layer can separate an etched facet and another regrowth layer or separate two regrowth layers. In some instances, selective etching can be performed to preferentially etch a quantum well layer relative to a barrier layer. The selective etching removes surface imperfections, which contribute to surface recombination and which tend to be more prevalent in etched facets of the quantum well layer than etched facets of the barrier layer.

公开(公告)号：WO2021086941A8

公开(公告)日：2021-05-06

申请号：PCT/US2020/057704

申请日：2020-10-28

Applicant: FACEBOOK TECHNOLOGIES, LLC

Inventor： BROELL, Markus ,  HWANG, David ,  LESTER, Steven, David ,  TYAGI, Anurag ,  GRUNDMANN, Michael ,  LHEUREUX, Guillaume ,  TONKIKH, Alexander

IPC: H01L33/06 ,  H01L33/20 ,  H01L33/30 ,  G09F9/33 ,  H01L25/075 ,  H01L25/0753 ,  H01L33/0008 ,  H01L33/305

Abstract: A light source includes a p-type semiconductor layer (1242; 1244; 1246), an n-type semiconductor layer (1212; 1214; 1216), and an active region between the p-type semiconductor layer (1242; 1244; 1246 ) and the n-type semiconductor layer (1212; 1214; 1216 ) and configured to emit light. The active region includes a plurality of barrier layers (1232; 1234; 1236) and one or more quantum well layers (1222; 1224; 1226). The plurality of barrier layers (1232; 1234; 1236 ) of the active region includes at least one n-doped barrier layer that includes an n-type dopant. The active region is characterized by a lateral linear dimension equal to or less than about 10 µm. The n- type dopant includes, for example, silicon, selenium, or tellurium.