A THIN-FILM TRANSISTOR COMPRISING ORGANIC SEMICONDUCTOR MATERIALS

    公开(公告)号:WO2020106742A1

    公开(公告)日:2020-05-28

    申请号:PCT/US2019/062247

    申请日:2019-11-19

    Abstract: This invention relates to a thin-film transistor including, a dielectric layer having a first side and an opposed second side; a source electrode, a drain electrode separated from the source electrode, and a semiconductor component disposed between and in contact with the source electrode and the drain electrode, the source electrode, the drain electrode and the semiconductor component being disposed adjacent the first side of the dielectric layer; and a gate electrode disposed adjacent the second side of the dielectric Iayer opposite the semiconductor component; wherein the semiconductor component comprises one or more n-type organic semiconductor materials based on arene-bis(dicarboximide)s, and wherein the thin-film transistor has a channel length, measured as the shortest path from the source electrode to the drain electrode, of no more than 20 μm.

    ELECTROWETTING ON DEMAND SYSTEM WITH ORGANIC TRANSISTORS

    公开(公告)号:WO2023027779A1

    公开(公告)日:2023-03-02

    申请号:PCT/US2022/025836

    申请日:2022-04-21

    Abstract: An active matrix fluidic droplet driver system comprising a plurality fluidic droplet pixels driver comprising organic thin-film transistors is described. Each fluidic droplet pixel driver includes an organic thin film transistor and a pixel electrode where the gate dielectric layer and the pixel dielectric layer comprise an organic polymer. The active matrix fluidic droplet driver system can be fabricated on plastic substrates at low temperature and operates at no more than 40 V.

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