公开(公告)号：WO0165830A9

公开(公告)日：2004-01-29

申请号：PCT/US0106533

申请日：2001-02-27

Applicant: FOVEON INC

Inventor： MERRILL RICHARD B ,  TURNER RICHARD M ,  DONG MILTON B ,  LYON RICHARD F

IPC: H04N5/351 ,  H04N5/3745 ,  H04N3/15

CPC classification number: H04N5/351 ,  H04N5/2351 ,  H04N5/3745

Abstract: A storage pixel sensor disposed on a semiconductor substrate comprises a photodiode having a first terminal coupled to a first potential and a second terminal. A barrier transistor has a first terminal coupled to the second terminal of the photodiode, a second terminal and a control gate coupled to a barrier set voltage. A reset transistor has a first terminal coupled to the second terminal of the barrier transistor, a second terminal coupled to a reset reference potential that reverse biases the photodiode, and a control gate coupled to a source of a RESET signal. A photocharge integration node is coupled to said second terminal of said barrier transistor. The photocharge integration node comprises the control gate of a first source-follower transistor. The first source-follower transistor is coupled to a source of bias current and has an output. A capacitive storage node is coupled to the output of the first source-follower transistor and comprises the control gate of a second source-follower transistor having an output. An exposure transistor is coupled between the output of the first source-follower transistor and a global current-summing node and has a control gate coupled to a saturation level voltage.

Abstract translation: 设置在半导体衬底上的存储像素传感器包括具有耦合到第一电位的第一端子和第二端子的光电二极管。 阻挡晶体管具有耦合到光电二极管的第二端子的第一端子，耦合到栅极设置电压的第二端子和控制栅极。 复位晶体管具有耦合到势垒晶体管的第二端子的第一端子，耦合到反向偏置光电二极管的复位参考电位的第二端子，以及耦合到RESET信号源的控制栅极。 光电荷积分节点耦合到所述阻挡晶体管的所述第二端子。 光电荷积分节点包括第一源极 - 跟随器晶体管的控制栅极。 第一源极跟随器晶体管耦合到偏置电流源并具有输出。 电容存储节点耦合到第一源跟随器晶体管的输出，并且包括具有输出的第二源极 - 跟随器晶体管的控制栅极。 曝光晶体管耦合在第一源极 - 跟随器晶体管的输出端和总计电流求和节点之间，并具有耦合到饱和电平电压的控制栅极。

公开(公告)号：WO0245404A3

公开(公告)日：2002-10-10

申请号：PCT/US0143159

申请日：2001-11-27

Applicant: FOVEON INC

Inventor： MERRILL RICHARD B ,  LYON RICHARD F ,  TURNER RICHARD M ,  DONG MILTON B

IPC: H04N3/15 ,  H04N5/335

CPC classification number: H04N5/37455

Abstract: A digital pixel sensor is formed on a semiconductor substrate and comprises a phototransducer responsive to light for providing an analog output signal that is a function of an incident amount of light. A comparator is configured to compare the analog output signal and a ramp reference signal. A plurality of n DRAM cells are configured to store an at least n-bit digital signal in response to the output of the comparator. An array of digital pixel sensors is also disclosed.

Abstract translation: 数字像素传感器形成在半导体衬底上，并且包括响应于光的光电转换器，用于提供作为入射光量的函数的模拟输出信号。 比较器被配置为比较模拟输出信号和斜坡参考信号。 多个n个DRAM单元被配置为响应于比较器的输出来存储至少n位数字信号。 还公开了数字像素传感器阵列。

公开(公告)号：WO0072584A9

公开(公告)日：2001-06-21

申请号：PCT/US0007988

申请日：2000-03-24

Applicant: FOVEON INC

Inventor： MAXHAM WILLIAM RUSSELL ,  LYON RICHARD F ,  PRITCHARD JEFFREY ORION ,  TURNER RICHARD M ,  MEAD CARVER A ,  MERRILL RICHARD

IPC: H04N5/232

CPC classification number: H04N5/23212 ,  H04N5/23293

Abstract: A digital camera comprises a light-tight housing. At least one solid-state array image sensor is disposed in the housing. A lens is optically coupled to the solid-state array image sensor through the housing. A viewing screen is coupled to the solid-state array image sensor for viewing an image sensed by the solid-state array image sensor. A user-operated pointing device is used to select a point anywhere on the image. Circuitry associated with the solid state array image sensor is responsive to the pointing device for presenting on the viewing screen an area associated with the point on the image, the area being magnified and having higher resolution with respect to the remainder of the image.

Abstract translation: 数码相机包括一个不透光的外壳。 至少一个固态阵列图像传感器设置在壳体中。 透镜通过外壳光耦合到固态阵列图像传感器。 观看屏幕耦合到固态阵列图像传感器，用于观看由固态阵列图像传感器感测到的图像。 用户操作的指点设备用于选择图像上任何位置的点。 与固态阵列图像传感器相关联的电路响应于指示设备，以在观看屏幕上呈现与图像上的点相关联的区域，该区域被放大并且相对于图像的其余部分具有更高的分辨率。

公开(公告)号：WO0165830A2

公开(公告)日：2001-09-07

申请号：PCT/US0106533

申请日：2001-02-27

Applicant: FOVEON INC

Inventor： MERRILL RICHARD B ,  TURNER RICHARD M ,  DONG MILTON B ,  LYON RICHARD F

IPC: H04N5/351 ,  H04N5/3745 ,  H04N3/15

CPC classification number: H04N5/351 ,  H04N5/2351 ,  H04N5/3745

Abstract: A storage pixel sensor disposed on a semiconductor substrate comprises a photodiode having a first terminal coupled to a first potential and a second terminal. A barrier transistor has a first terminal coupled to the second terminal of the photodiode, a second terminal and a control gate coupled to a barrier set voltage. A reset transistor has a first terminal coupled to the second terminal of the barrier transistor, a second terminal coupled to a reset reference potential that reverse biases the photodiode, and a control gate coupled to a source of a RESET signal. A photocharge integration node is coupled to said second terminal of said barrier transistor. The photocharge integration node comprises the control gate of a first source-follower transistor. The first source-follower transistor is coupled to a source of bias current and has an output. A capacitive storage node is coupled to the output of the first source-follower transistor and comprises the control gate of a second source-follower transistor having an output. An exposure transistor is coupled between the output of the first source-follower transistor and a global current-summing node and has a control gate coupled to a saturation level voltage.

Abstract translation: 设置在半导体衬底上的存储像素传感器包括具有耦合到第一电位的第一端子和第二端子的光电二极管。 阻挡晶体管具有耦合到光电二极管的第二端子的第一端子，耦合到栅极设置电压的第二端子和控制栅极。 复位晶体管具有耦合到势垒晶体管的第二端子的第一端子，耦合到反向偏置光电二极管的复位参考电位的第二端子，以及耦合到RESET信号源的控制栅极。 光电荷积分节点耦合到所述阻挡晶体管的所述第二端子。 光电荷积分节点包括第一源极 - 跟随器晶体管的控制栅极。 第一源极跟随器晶体管耦合到偏置电流源并具有输出。 电容存储节点耦合到第一源跟随器晶体管的输出，并且包括具有输出的第二源极 - 跟随器晶体管的控制栅极。 曝光晶体管耦合在第一源极 - 跟随器晶体管的输出端和总计电流求和节点之间，并具有耦合到饱和电平电压的控制栅极。

公开(公告)号：WO0161756A2

公开(公告)日：2001-08-23

申请号：PCT/US0104463

申请日：2001-02-12

Applicant: FOVEON INC

Inventor： MERRILL RICHARD B ,  TURNER RICHARD M ,  DONG MILTON B ,  LYON RICHARD F

IPC: H01L27/146 ,  H04N5/357 ,  H04N5/369 ,  H04N5/374

CPC classification number: H04N5/357 ,  H01L27/14609 ,  H04N5/3698 ,  H04N5/374 ,  H04N5/3765

Abstract: Active pixel sensor array with bootstrap amplification, comprising a plurality of active pixels arranged in rows and columns, wherein each active pixel comprises a photodiode (12), a reset transistor (14), a source follower transistor (16), and a row select transistor (18); it may additionally comprise a transfer transistor (32). Each row of active pixels comprises a separate source, follower drain row line (Vd), coupled to the drains of the source-follower transistors (16) within said row. The potential of the drain row line is set relatively low during the integration period, and is set relatively high during charge-readout, in order to increase the read-out voltage.

Abstract translation: 具有自举放大的有源像素传感器阵列包括以行和列排列的多个有源像素，其中每个有源像素包括光电二极管（12），复位晶体管（14），源极跟随器晶体管（16）和行选择 晶体管（18）; 它可以另外包括传输晶体管（32）。 每行有源像素包括耦合到所述行内的源极 - 跟随器晶体管（16）的漏极的单独源极，跟随器漏极行线（Vd）。 在积分期间，漏极行线的电位设定得相对较低，并且在电荷读出期间被设置得相对较高，以增加读出电压。

公开(公告)号：WO9966709A3

公开(公告)日：2000-02-03

申请号：PCT/US9913471

申请日：1999-06-15

Applicant: FOVEON INC

Inventor： MERRILL RICHARD B ,  MEAD CARVER A ,  LYON RICHARD F ,  TURNER RICHARD M

IPC: H04N5/365 ,  H04N5/374 ,  H04N5/3745 ,  H04N3/15

CPC classification number: H04N5/3658 ,  H04N5/374 ,  H04N5/3742 ,  H04N5/3745

Abstract: A pixel sensor array structure which reduces the amount of striped fixed pattern noise includes a plurality of pixel sensors arranged in an array; a column in the array, a plurality of load devices, each load device coupled to one of the column lines and to a column reset reference potential; a plurality of column select switches, the common line coupled to the column select switches and to a buffer amplifier. A unity-gain buffer amplifier may be coupled to the common line and to a driven shield, which acts to reduce the effective capacitance of the common line. The column select switches transistors may be designed with an annular layout to reduce the capacitance they add to the common line. The load devices may be designed with a relatively large length and width to minimize variations in their bias currents. A two-tap FIR filter may be coupled to the array amplifier to correct pixel values which may be blurred when fast multiplexing is used.

Abstract translation: 减少条纹固定图案噪声量的像素传感器阵列结构包括以阵列布置的多个像素传感器; 阵列中的列，多个负载装置，每个负载装置耦合到列线之一和列复位参考电位; 多个列选择开关，公共线耦合到列选择开关和缓冲放大器。 单位增益缓冲放大器可以耦合到公共线和驱动屏蔽，其用于降低公共线的有效电容。 列选择开关晶体管可以被设计为具有环形布局以减小它们添加到公共线的电容。 负载装置可以设计成具有相对较大的长度和宽度以最小化其偏置电流的变化。 可以将二抽头FIR滤波器耦合到阵列放大器以校正当使用快速复用时可能模糊的像素值。