公开(公告)号：WO2004013039A3

公开(公告)日：2004-12-16

申请号：PCT/US0314930

申请日：2003-05-13

Applicant: FREESCALE SEMICONDUCTOR INC

Inventor： FOERSTNER JUERGEN A ,  SMITH STEVEN M ,  ROOP RAYMOND MERVIN

IPC: B81B3/00 ,  B81B7/02 ,  B81C1/00 ,  H01H49/00 ,  H01H59/00

CPC classification number: B81C1/0038 ,  B81B2201/018 ,  B81B2201/0292 ,  B81C1/00246 ,  B81C2201/0164 ,  B81C2203/0735 ,  H01G5/18

Abstract: A method is provided for making a MEMS structure (69). In accordance with the method, a CMOS substrate (51) is provided which has interconnect metal (53) deposited thereon. A MEMS structure is created on the substrate through the plasma assisted chemical vapor deposition (PACVD) of a material selected from the group consisting of silicon and silicon-germanium alloys. The low deposition temperatures attendant to the use of PACVD allow these materials to be used for MEMS fabrication at the back end of an integrated CMOS process.

Abstract translation: 提供了一种用于制造MEMS结构（69）的方法。 根据该方法，提供了具有沉积在其上的互连金属（53）的CMOS衬底（51）。 通过等离子体辅助化学气相沉积（PACVD）在基材上形成MEMS结构，该材料选自由硅和硅 - 锗合金组成的组。 伴随使用PACVD的低沉积温度允许这些材料在集成CMOS工艺的后端用于MEMS制造。