公开(公告)号：WO2014008258A2

公开(公告)日：2014-01-09

申请号：PCT/US2013/049061

申请日：2013-07-02

Applicant: HEMLOCK SEMICONDUCTOR CORPORATION

Inventor： HERRON, William ,  REVIS, Anthony, L. ,  SOBECK, Daniel, D.

IPC: B01J7/00

CPC classification number: B01J8/0285 ,  B01J8/025 ,  B01J19/0013 ,  B01J2208/00168 ,  B01J2208/00247 ,  B01J2219/00087 ,  B01J2219/00101 ,  C01B33/033 ,  C01B33/1071

Abstract: An apparatus is provided that includes a heating zone, an overhead temperature modulation zone in fluid communication with the heating zone, and an overhead cooling zone in fluid communication with the overhead temperature modulation zone. The heating zone includes a solid reactant support and a reactant gas input, and also includes a heater. The overhead temperature modulation zone includes a temperature regulator for modifying the temperature of the overhead temperature modulation zone. The overhead temperature modulation zone also includes an overhead gas outlet and provides a reflux flow path for condensate to return to the heating zone. The overhead cooling zone has a chiller for cooling the temperature of the overhead cooling zone. The overhead cooling zone provides a barrier to separate condensate formed therein from the overhead temperature modulation zone. The apparatus further includes an apparatus wall that defines an interior chamber of the apparatus between the zones.

Abstract translation: 提供了一种设备，其包括加热区，与加热区流体连通的顶部温度调节区和与顶部温度调节区流体连通的顶部冷却区。 加热区包括固体反应物载体和反应物气体输入装置，并且还包括加热器。 顶部温度调节区包括用于改变顶部温度调节区的温度的温度调节器。 塔顶温度调节区还包括塔顶气体出口并提供用于冷凝物返回到加热区的回流路径。 顶部冷却区具有用于冷却顶部冷却区的温度的冷却器。 顶部冷却区提供屏障，以将塔顶温度调节区内形成的冷凝物分离。 该设备还包括设备壁，该设备壁限定了设备之间的设备的内部腔室。

公开(公告)号：WO2014008271A1

公开(公告)日：2014-01-09

申请号：PCT/US2013/049084

申请日：2013-07-02

Applicant: HEMLOCK SEMICONDUCTOR CORPORATION

Inventor： HERRON, William ,  METZLER, Brad, A. ,  SOBECK, Daniel, D.

IPC: C01B33/03 ,  C01B33/035 ,  C01B33/033

CPC classification number: C01B33/03 ,  C01B33/033 ,  C01B33/035

Abstract: A method includes the step of introducing hydrogen and a silane-containing feed gas that comprises trichlorosilane into one or more decomposition reactors that contain a polycrystalline silicon seed substrate. The trichlorosilane and hydrogen are reacted to form polycrystalline silicon in the decomposition reactor. A gaseous stream that comprises silicon tetrachloride is exhausted from the one or more decomposition reactors. The gaseous stream and a source of elemental metal that is reactive with the silicon tetrachloride is fed into a recovery reactor. The silicon tetrachloride and the elemental metal are reacted to produce polycrystalline silicon and a first composition that comprises metal chloride. Elemental metal is recovered from the metal chloride in the first composition through at least one of 1) subjecting the first composition comprising the metal chloride to hydrogenation to produce elemental metal and hydrogen chloride, or 2) reacting the metal chloride in the first composition and elemental silicon.

Abstract translation: 一种方法包括将含有三氯硅烷的氢气和含硅烷的进料气体引入到含有多晶硅种子基材的一个或多个分解反应器中的步骤。 在分解反应器中使三氯硅烷和氢反应形成多晶硅。 包含四氯化硅的气流从一个或多个分解反应器中排出。 将气态物流和与四氯化硅反应的元素金属源送入回收反应器。 使四氯化硅和元素金属反应以产生多晶硅和包含金属氯化物的第一组合物。 第一组合物中的金属氯化物中的元素金属是通过以下至少之一回收的：1）将包含金属氯化物的第一组合物进行氢化以产生元素金属和氯化氢，或2）使第一组合物中的金属氯化物和元素 硅。

公开(公告)号：WO2014008262A1

公开(公告)日：2014-01-09

申请号：PCT/US2013/049068

申请日：2013-07-02

Applicant: HEMLOCK SEMICONDUCTOR CORPORATION

Inventor： ARVIDSON, Arvid, N. ,  HERRON, William ,  MOLNAR, Michael, J. ,  REVIS, Anthony, L. ,  SOBECK, Daniel, D.

IPC: C01B33/107 ,  C01G17/04 ,  C01B33/033 ,  C01B33/039 ,  B01J8/02

CPC classification number: B01J8/025 ,  B01J8/0285 ,  B01J19/0013 ,  B01J2208/00168 ,  B01J2208/00247 ,  B01J2208/0053 ,  B01J2219/00087 ,  B01J2219/00101 ,  B22F9/20 ,  C01B33/033 ,  C01B33/039 ,  C01B33/107 ,  C01B33/1071 ,  C01G3/05 ,  C01G9/04 ,  C01G17/04

Abstract: A method of conducting an equilibrium reaction and selectively separating reactive species of the equilibrium reaction includes introducing a first composition comprising a metal halide into an apparatus that is sealed from the ambient environment. A source of an elemental semiconductor that is reactive with the metal halide is introduced into the apparatus. The metal halide and elemental semiconductor are reacted, through an equilibrium reaction, in the apparatus to produce a gaseous stream that comprises a halide of the semiconductor, unreacted metal halide, and, optionally, elemental metal. Unreacted metal halide and, when present, elemental metal are condensed from the gaseous stream with the halide of the semiconductor remaining in the gaseous stream. At least a portion of the gaseous stream including the halide of the semiconductor is isolated from the condensed metal halide and elemental metal after condensing the metal halide and, when present, elemental metal from the gaseous stream.

Abstract translation: 进行平衡反应并选择性分离平衡反应的反应物种的方法包括将包含金属卤化物的第一组合物引入到与周围环境密封的装置中。 将与金属卤化物反应的元素半导体的源引入该装置。 金属卤化物和元素半导体通过平衡反应在装置中反应以产生包含半导体的卤化物，未反应的金属卤化物和任选的元素金属的气流。 未反应的金属卤化物，当存在时，元素金属从气流中冷凝，半导体的卤化物保留在气流中。 包含半导体的卤化物的气流的至少一部分在冷凝金属卤化物之后与冷凝的金属卤化物和元素金属分离，并且当存在时，来自气态物流的元素金属。