UTILIZING NON-VOLATILE PHASE CHANGE MEMORY IN OFFLINE STATUS AND ERROR DEBUGGING METHODOLOGIES
    1.
    发明申请
    UTILIZING NON-VOLATILE PHASE CHANGE MEMORY IN OFFLINE STATUS AND ERROR DEBUGGING METHODOLOGIES 审中-公开
    在离线状态和错误调试方法中使用非易失性相变存储器

    公开(公告)号:WO2017131636A1

    公开(公告)日:2017-08-03

    申请号:PCT/US2016/014909

    申请日:2016-01-26

    Abstract: Methods and apparatus to store fault data and/or status data associated with an integrated circuit (100) into a memristor system (106) are disclosed. An example method includes determining when a fault corresponding to an integrated circuit (100) has occurred, when first data related to the integrated circuit (100) is updated. An example method further includes storing the first data in a first subset of a plurality of resistive elements. An example method further includes, in response to the detection of the fault, storing second data in a second subset of the plurality of resistive elements, the second data corresponding to an error associated with the fault.

    Abstract translation: 公开了用于将与集成电路(100)相关联的故障数据和/或状态数据存储到忆阻器系统(106)中的方法和设备。 示例方法包括确定何时发生与集成电路(100)相对应的故障,何时更新与集成电路(100)相关的第一数据。 示例方法还包括将第一数据存储在多个电阻元件的第一子集中。 示例性方法还包括响应于检测到故障,将第二数据存储在多个电阻元件的第二子集中,第二数据对应于与故障相关的误差。

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