公开(公告)号：WO1997046915A1

公开(公告)日：1997-12-11

申请号：PCT/US1997009952

申请日：1997-06-06

Applicant: HOECHST CELANESE CORPORATION

Inventor： HOECHST CELANESE CORPORATION ,  RAHMAN, M., Dalil ,  HANNIGAN, Timothy, T. ,  LYNCH, Thomas, J.

IPC: G03F07/09

CPC classification number: H01L31/0216 ,  G03F7/091

Abstract: The present invention provides a process for producing bottom anti-reflective coating compositions having a very low level of metal ions utilizing specially treated anion exchange resins. The present invention also provides a method for producing semiconductor devices by producing photoimages on a substrate using such bottom anti-reflective coating compositions.

Abstract translation: 本发明提供一种生产具有非常低水平的金属离子的底部抗反射涂层组合物的方法，该方法使用特殊处理的阴离子交换树脂。 本发明还提供一种通过使用这种底部抗反射涂层组合物在基板上产生光像来制造半导体器件的方法。

公开(公告)号：WO1997000465A1

公开(公告)日：1997-01-03

申请号：PCT/US1996008179

申请日：1996-05-31

Applicant: HOECHST CELANESE CORPORATION

Inventor： HOECHST CELANESE CORPORATION ,  SOUNIK, James, R. ,  FICNER, Stanley, A. ,  DAMMEL, Ralph, R. ,  LU, Ping-Hung ,  LYNCH, Thomas, J. ,  DURHAM, Dana, L.

IPC: G03F07/023

CPC classification number: G03F7/0233 ,  C08G61/02

Abstract: The invention relates to the use of thermally stable, water-insoluble and alkali-soluble polyalkylated phenolic resins in photosensitive compositions, where the polyalkylated resin is a reaction product of a carboxylic acid and at least one substituted phenyl carbinol. The invention also relates to the use of these photosensitive compositions in manufacturing semiconductor devices.

Abstract translation: 本发明涉及热稳定的水不溶性和碱溶性多烷基化酚醛树脂在光敏组合物中的用途，其中多烷基化树脂是羧酸和至少一种取代的苯基甲醇的反应产物。 本发明还涉及这些光敏组合物在制造半导体器件中的用途。

公开(公告)号：WO1993012468A1

公开(公告)日：1993-06-24

申请号：PCT/US1992010836

申请日：1992-12-15

Applicant: HOECHST CELANESE CORPORATION

Inventor： HOECHST CELANESE CORPORATION ,  LYNCH, Thomas, J. ,  DURHAM, Dana, L. ,  SOBODACHA, Chester

IPC: G03F07/023

CPC classification number: C08G79/025 ,  G03F7/0233 ,  Y10S430/106

Abstract: This invention relates to novel radiation sensitive compositions. More particularly the invention relates to photoresists containing phosphorus and nitrogen linked polymers; i.e., polyphosphazenes, useful in the preparation of a relief pattern on a substrate; e.g., a silicon wafer or aluminum plate. The polyphosphazenes of this invention can be synthesized by the condensation of N-trimethylsilyalkoxyphosphorimides. Radiation sensitive positive photoresist compositions of the invention can be developed in aqueous base developer or organic solvent developer. The base developer dissolution properties of the composition can be controlled by incorporating carboxylate groups into the polyphosphazene. The polyphosphazenes utilized in this invention have good solubility properties in various organic solvents and also have good mechanical, electrical, adhesion and thermal properties.

公开(公告)号：WO1994014893A1

公开(公告)日：1994-07-07

申请号：PCT/US1993012407

申请日：1993-12-20

Applicant: HOECHST CELANESE CORPORATION

Inventor： HOECHST CELANESE CORPORATION ,  LYNCH, Thomas, J. ,  SOBODACHA, Chester, J. ,  DURHAM, Dana, L.

IPC: C08L61/06

CPC classification number: G03F7/0236 ,  C08G8/08 ,  C08L61/06 ,  C08L61/04

Abstract: The present invention relates to a water insoluble, aqueous alkali soluble novolak resin blend, wherein the resin blend comprises two novolaks having dissimilar relative molecular weights and similar dissolution rates, a process for producing such a resin blend, a photoresist containing such a resin blend and a method for producing a semi-conductor device utilizing such a photoresist.

Abstract translation: 本发明涉及一种不溶于水的碱溶性酚醛清漆树脂混合物，其中树脂共混物包含具有不同相对分子量和相似溶解速率的两种酚醛清漆，制备这种树脂共混物的方法，含有这种树脂共混物的光致抗蚀剂， 一种利用这种光致抗蚀剂制造半导体器件的方法。

公开(公告)号：WO1994015259A1

公开(公告)日：1994-07-07

申请号：PCT/US1993012404

申请日：1993-12-20

Applicant: HOECHST CELANESE CORPORATION

Inventor： HOECHST CELANESE CORPORATION ,  SOBODACHA, Chester, J. ,  LYNCH, Thomas, J. ,  DURHAM, Dana, L.

IPC: G03F07/023

CPC classification number: C08G8/08 ,  C08G8/24 ,  G03F7/0236

Abstract: A process for producing a water insoluble, aqueous alkali soluble novolak resin, process for producing a photoresist containing such a novolak resin and a method for producing a semiconductor device using such a photoresist.

Abstract translation: 一种生产水不溶性的碱溶性酚醛清漆树脂的方法，含有这种酚醛清漆树脂的光致抗蚀剂的制造方法以及使用这种光刻胶的半导体器件的制造方法。