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公开(公告)号：WO1993018437A1
公开(公告)日：1993-09-16
申请号：PCT/US1993001749
申请日：1993-02-25
Applicant: HOECHST CELANESE CORPORATION
Inventor： HOECHST CELANESE CORPORATION , RAHMAN, M., Dalil , DURHAM, Dana, L.
IPC: G03F07/004
CPC classification number: G03F7/004 , G03F7/0236
Abstract: The present invention provides methods for producing photoresist compositions having a very low level of metal ions, utilizing specially treated ion exchange resins. A method is also provided for producing semiconductor devices using such photoresist compositions.
Abstract translation: 本发明提供了利用特殊处理的离子交换树脂制备具有非常低水平的金属离子的光致抗蚀剂组合物的方法。 还提供了一种用于制造使用这种光致抗蚀剂组合物的半导体器件的方法。
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公开(公告)号：WO1994015259A1
公开(公告)日：1994-07-07
申请号：PCT/US1993012404
申请日：1993-12-20
Applicant: HOECHST CELANESE CORPORATION
Inventor： HOECHST CELANESE CORPORATION , SOBODACHA, Chester, J. , LYNCH, Thomas, J. , DURHAM, Dana, L.
IPC: G03F07/023
CPC classification number: C08G8/08 , C08G8/24 , G03F7/0236
Abstract: A process for producing a water insoluble, aqueous alkali soluble novolak resin, process for producing a photoresist containing such a novolak resin and a method for producing a semiconductor device using such a photoresist.
Abstract translation: 一种生产水不溶性的碱溶性酚醛清漆树脂的方法，含有这种酚醛清漆树脂的光致抗蚀剂的制造方法以及使用这种光刻胶的半导体器件的制造方法。
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3.发明申请ACIDIC ION EXCHANGE RESIN AS A CATALYST TO SYNTHESIZE A NOVOLAK RESIN AND PHOTORESIST COMPOSITION THEREFROM 审中-公开ACIDIC离子交换树脂作为催化剂合成NOVOLAK树脂和其中的光电组合物
公开(公告)号：WO1997025359A1
公开(公告)日：1997-07-17
申请号：PCT/US1996020165
申请日：1996-12-17
Applicant: HOECHST CELANESE CORPORATION
Inventor： HOECHST CELANESE CORPORATION , RAHMAN, M., Dalil , AUBIN, Daniel, P. , KOKINDA, Elaine, G. , DURHAM, Dana, L.
IPC: C08G08/10
CPC classification number: C08G8/10 , G03F7/0236
Abstract: The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having consistent molecular weight and a very low level of metal ions, utilizing a solid acid condensation catalyst. A method is also provided for producing photoresist composition having a very low level of metal ions from such novolak resins and for producing semiconductor devices using such photoresist compositions.
Abstract translation: 本发明提供了利用固体酸缩合催化剂生产具有一致分子量和非常低水平的金属离子的水不溶性水溶性酚醛清漆树脂的方法。 还提供了一种用于生产具有来自这种酚醛清漆树脂的非常低水平的金属离子并且使用这种光致抗蚀剂组合物制造半导体器件的光致抗蚀剂组合物的方法。
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公开(公告)号：WO1993012152A1
公开(公告)日：1993-06-24
申请号：PCT/US1992010834
申请日：1992-12-15
Applicant: HOECHST CELANESE CORPORATION
Inventor： HOECHST CELANESE CORPORATION , RAHMAN, M., Dalil , DURHAM, Dana, L.
IPC: C08G08/10
CPC classification number: C08G8/08 , G03F7/0236
Abstract: The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having a very low level of metal ions, utilizing treated ion exchange resins. A method is also provided for producing photoresist composition having a very low level of metal ions from such novolak resins and for producing semiconductor devices using such photoresist compositions.
Abstract translation: 本发明提供了利用处理的离子交换树脂生产具有非常低的金属离子含量的水不溶性水溶性酚醛清漆树脂的方法。 还提供了一种用于生产具有来自这种酚醛清漆树脂的非常低水平的金属离子并且使用这种光致抗蚀剂组合物制造半导体器件的光致抗蚀剂组合物的方法
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公开(公告)号：WO1994014893A1
公开(公告)日：1994-07-07
申请号：PCT/US1993012407
申请日：1993-12-20
Applicant: HOECHST CELANESE CORPORATION
Inventor： HOECHST CELANESE CORPORATION , LYNCH, Thomas, J. , SOBODACHA, Chester, J. , DURHAM, Dana, L.
IPC: C08L61/06
CPC classification number: G03F7/0236 , C08G8/08 , C08L61/06 , C08L61/04
Abstract: The present invention relates to a water insoluble, aqueous alkali soluble novolak resin blend, wherein the resin blend comprises two novolaks having dissimilar relative molecular weights and similar dissolution rates, a process for producing such a resin blend, a photoresist containing such a resin blend and a method for producing a semi-conductor device utilizing such a photoresist.
Abstract translation: 本发明涉及一种不溶于水的碱溶性酚醛清漆树脂混合物，其中树脂共混物包含具有不同相对分子量和相似溶解速率的两种酚醛清漆，制备这种树脂共混物的方法，含有这种树脂共混物的光致抗蚀剂， 一种利用这种光致抗蚀剂制造半导体器件的方法。
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Patent Agency Ranking6.发明申请
公开(公告)号：WO1994001807A1
公开(公告)日：1994-01-20
申请号：PCT/US1993006139
申请日：1993-06-24
Applicant: HOECHST CELANESE CORPORATION
Inventor： HOECHST CELANESE CORPORATION , RAHMAN, M., Dalil , DURHAM, Dana, L.
IPC: G03F07/09
CPC classification number: G03F7/091
Abstract: The present invention provides methods for producing top anti-reflective coating compositions having a very low level of metal ions, utilizing specially treated ion exchange resins. A method is also provided for producing semiconductor devices using such top anti-reflective coating compositions.
Abstract translation: 本发明提供了利用特殊处理的离子交换树脂生产具有非常低水平金属离子的顶部抗反射涂料组合物的方法。 还提供了一种用于制造使用这种顶部抗反射涂层组合物的半导体器件的方法。
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公开(公告)号：WO1997000465A1
公开(公告)日：1997-01-03
申请号：PCT/US1996008179
申请日：1996-05-31
Applicant: HOECHST CELANESE CORPORATION
Inventor： HOECHST CELANESE CORPORATION , SOUNIK, James, R. , FICNER, Stanley, A. , DAMMEL, Ralph, R. , LU, Ping-Hung , LYNCH, Thomas, J. , DURHAM, Dana, L.
IPC: G03F07/023
CPC classification number: G03F7/0233 , C08G61/02
Abstract: The invention relates to the use of thermally stable, water-insoluble and alkali-soluble polyalkylated phenolic resins in photosensitive compositions, where the polyalkylated resin is a reaction product of a carboxylic acid and at least one substituted phenyl carbinol. The invention also relates to the use of these photosensitive compositions in manufacturing semiconductor devices.
Abstract translation: 本发明涉及热稳定的水不溶性和碱溶性多烷基化酚醛树脂在光敏组合物中的用途，其中多烷基化树脂是羧酸和至少一种取代的苯基甲醇的反应产物。 本发明还涉及这些光敏组合物在制造半导体器件中的用途。
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公开(公告)号：WO1994015262A1
公开(公告)日：1994-07-07
申请号：PCT/US1993012405
申请日：1993-12-20
Applicant: HOECHST CELANESE CORPORATION
Inventor： HOECHST CELANESE CORPORATION , RAHMAN, M., Dalil , DURHAM, Dana, L.
IPC: G03F07/32
CPC classification number: G03F7/32
Abstract: The present invention provides a process for producing a developer containing a surfactant which contains a very low level of metal ions and a process for developing light sensitive photoresist compositions, using such a developer, to produce semiconductor devices.
Abstract translation: 本发明提供一种制备包含含有非常低水平的金属离子的表面活性剂的显影剂的方法和使用这种显影剂显影光敏性光刻胶组合物以制备半导体器件的方法。
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9.发明申请
公开(公告)号：WO1994014862A1
公开(公告)日：1994-07-07
申请号：PCT/US1993012403
申请日：1993-12-20
Applicant: HOECHST CELANESE CORPORATION
Inventor： HOECHST CELANESE CORPORATION , RAHMAN, M., Dalil , AUBIN, Daniel, P. , DURHAM, Dana, L. , DAMMEL, Ralph, R.
IPC: C08G08/10
CPC classification number: C08G8/08 , G03F7/0236
Abstract: The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having a precise and consistent molecular weight, by adjusting the concentration of Lewis base. A method is also provided for producing photoresist composition from such novolak resins and for producing semiconductor devices using such photoresist compositions.
Abstract translation: 本发明提供了通过调节路易斯碱的浓度来制备具有精确和一致分子量的水不溶性水溶性酚醛清漆树脂的方法。 还提供了用于由这种酚醛清漆树脂制造光致抗蚀剂组合物并用于制备使用这种光致抗蚀剂组合物的半导体器件的方法。
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公开(公告)号：WO1993012468A1
公开(公告)日：1993-06-24
申请号：PCT/US1992010836
申请日：1992-12-15
Applicant: HOECHST CELANESE CORPORATION
IPC: G03F07/023
CPC classification number: C08G79/025 , G03F7/0233 , Y10S430/106
Abstract: This invention relates to novel radiation sensitive compositions. More particularly the invention relates to photoresists containing phosphorus and nitrogen linked polymers; i.e., polyphosphazenes, useful in the preparation of a relief pattern on a substrate; e.g., a silicon wafer or aluminum plate. The polyphosphazenes of this invention can be synthesized by the condensation of N-trimethylsilyalkoxyphosphorimides. Radiation sensitive positive photoresist compositions of the invention can be developed in aqueous base developer or organic solvent developer. The base developer dissolution properties of the composition can be controlled by incorporating carboxylate groups into the polyphosphazene. The polyphosphazenes utilized in this invention have good solubility properties in various organic solvents and also have good mechanical, electrical, adhesion and thermal properties.
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