公开(公告)号：WO2013176904A1

公开(公告)日：2013-11-28

申请号：PCT/US2013/040431

申请日：2013-05-09

Applicant: HRL LABORATORIES, LLC

Inventor： KHALIL, Sameh ,  BOUTROS, Karim, S. ,  SHINOHARA, Keisuke

IPC: H01L29/778 ,  H01L21/335

CPC classification number: H01L29/66462 ,  H01L21/31144 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/7786

Abstract: A high electron mobility field effect transistor (HEMT) having a substrate, a channel layer on the substrate and a barrier layer on the channel layer includes a stress inducing layer on the barrier layer, the stress inducing layer varying the piezo-electric effect in the barrier layer in a drift region between a gate and a drain. A two dimensional electron gas (2DEG) has a non-uniform lateral distribution in the drift region between the gate and the drain.

Abstract translation: 具有衬底，衬底上的沟道层和沟道层上的阻挡层的高电子迁移率场效应晶体管（HEMT）包括在阻挡层上的应力诱导层，应力诱导层改变了压电效应 栅极和漏极之间的漂移区域中的阻挡层。 二维电子气（2DEG）在栅极和漏极之间的漂移区域中具有不均匀的横向分布。

公开(公告)号：WO2013176906A1

公开(公告)日：2013-11-28

申请号：PCT/US2013/040447

申请日：2013-05-09

Applicant: HRL LABORATORIES, LLC

Inventor： KHALIL, Sameh ,  BOUTROS, Karim S.

IPC: H01L29/778 ,  H01L21/335

CPC classification number: H01L29/66462 ,  H01L21/0274 ,  H01L21/3085 ,  H01L21/31144 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/7786

Abstract: A HEMT device has a substrate; a buffer layer disposed above the substrate; a carrier supplying layer disposed above the buffer layer; a gate element penetrating the carrier supplying layer; and a drain element disposed on the carrier supplying layer. The carrier supplying layer has a non-uniform thickness between the gate element and the drain element, the carrier supplying layer having a relatively greater thickness adjacent the drain element and a relatively thinner thickness adjacent the gate element. A non-uniform two-dimensional electron gas conduction channel is formed in the carrier supplying layer, the two-dimensional electron gas conduction channel having a non-uniform profile between the gate and drain elements.

Abstract translation: HEMT装置具有基板; 设置在所述基板上方的缓冲层; 设置在所述缓冲层上方的载体供给层; 穿过载体供给层的栅极元件; 以及设置在载体供给层上的漏极元件。 载体供应层在栅极元件和漏极元件之间具有不均匀的厚度，载体供应层具有与漏极元件相邻的相对较大的厚度，并且邻近栅极元件具有相对较薄的厚度。 在载体供给层中形成不均匀的二维电子气导电通道，二维电子气导电通道在栅极和漏极元件之间具有不均匀的轮廓。

公开(公告)号：WO2013176905A4

公开(公告)日：2013-11-28

申请号：PCT/US2013/040441

申请日：2013-05-09

Applicant: HRL LABORATORIES, LLC

Inventor： KHALIL, Sameh ,  BOUTROS, Karim S.

IPC: H01L29/778 ,  H01L21/335

Abstract: A high electron mobility field effect transistor (HEMT) includes a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain.