公开(公告)号：WO2019125366A1

公开(公告)日：2019-06-27

申请号：PCT/US2017/067004

申请日：2017-12-18

Applicant: INTEL CORPORATION

Inventor： MANIPATRUNI, Sasikanth ,  GOSAVI, Tanay ,  ALLEN, Gary, A. ,  NIKONOV, Dmitri, E. ,  YOUNG, Ian, A.

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12

Abstract: An apparatus is provided which comprises: a magnetic junction (e.g., magnetic tunneling junction or spin valve); a structure adjacent to the magnetic junction, the structure comprising a magnet doped with a material (e.g., Ge, Ga, Si, F, O, N, Co, Bi, or Sb) to increase resistivity of a magnet of the magnetic junction; and an interconnect adjacent to the structure, wherein the interconnect comprises a material exhibiting spin orbit coupling.