Abstract:
An apparatus is provided which comprises: a magnetic junction having a magnet with a first magnetization; an interconnect adjacent to the magnetic junction, wherein the interconnect comprises a material exhibiting spin orbit coupling; and a structure adjacent to the interconnect such that the magnetic junction and structure are on opposite surfaces of the interconnect, wherein the structure comprises a magnet with a second magnetization substantially different from the first magnetization.
Abstract:
The present disclosure relates to the fabrication of spin transfer torque memory elements for non-volatile microelectronic memory devices. The spin transfer torque memory element may include a magnetic tunneling junction connected with specifically sized and/or shaped fixed magnetic layer that can be positioned in a specific location adjacent a free magnetic layer. The shaped fixed magnetic layer may concentrate current in the free magnetic layer, which may result in a reduction in the critical current needed to switch a bit cell in the spin transfer torque memory element.
Abstract:
An apparatus is provided which comprises: a magnetic junction including: a first structure comprising a magnet with unfixed perpendicular magnetic anisotropy (PMA) with respect to a plane of a device; a second structure comprising one of a dielectric or metal, the second structure being adjacent to the first structure; a third structure comprising a magnet with fixed PMA, wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; and an interconnect adjacent to the magnetic junction, wherein the interconnect comprises a spin orbit material, and wherein the first structure has a dimension along a length of the interconnect, wherein the dimension is substantially equal to the length of the interconnect.
Abstract:
An apparatus is provided which comprises: a magnet having a first portion and a second portion; a first structure, a portion of which is adjacent to the first portion of the magnet, wherein the first structure is to provide an inverse spin orbit coupling effect; a second structure adjacent to the second portion, the second structure comprising a material having a hexagonal structure with magnetoelectric properties; and a third structure adjacent to the second structure, the third structure comprising a material having a hexagonal structure.
Abstract:
Described is an apparatus which comprises: a 4-state input magnet; a first spin channel region adjacent to the 4-state input magnet; a 4-state output magnet; a second spin channel region adjacent to the 4-state input and output magnets; and a third spin channel region adjacent to the 4-state output magnet. Described in an apparatus which comprises: a 4-state input magnet; a first filter layer adjacent to the 4-state input magnet; a first spin channel region adjacent to the first filter layer; a 4-state output magnet; a second filter layer adjacent to the 4-state output magnet; a second spin channel region adjacent to the first and second filter layers; and a third spin channel region adjacent to the second filter layer.
Abstract:
Methods and apparatus for complex number generation and operation on a chip are disclosed. A disclosed logic device includes a first metal layer; a first channel of a semiconductor material on top of the first metal layer, both ends of the semiconductor material doped of a first type; a first gate dielectric adjacent the first channel; and a first plurality of gates arranged radially around the first channel and in contact with the first gate dielectric to separately control the first channel.
Abstract:
An apparatus is provided which comprises: a first magnetic junction; a second magnetic junction; an interconnect adjacent to the first and second magnetic junctions; a first structure adjacent to the interconnect such that the first structure is adjacent to the first magnetic junction, wherein the first structure comprises a magnet with a first magnetization relative to a plane of a device; and a second structure adjacent to the interconnect such that the second structure is adjacent the second magnetic junction, wherein the second structure comprises a magnet with a second magnetization relative to the x-y plane of the device.
Abstract:
Described is an apparatus which comprises: a random projector; a logic coupled to the random projector, the logic to perform clustering; and a feedback signal path coupled to an output of the logic and the random projector. Described is an apparatus which comprises: an array of magnetic elements operable to generate random numbers; a supply node coupled to the array of magnetic elements; and a circuit to adjust voltage on the supply node to change the random numbers. Described is a system which comprises: a memory; a processor coupled to the memory, the processor including an apparatus according to the apparatus described above; and a wireless interface for allowing the processor to communicate with another device.
Abstract:
An integrated structure includes front and rear facets (201, 203) optically- coupled by a waveguide (220) passing through the integrated structure. The integrated structure includes a gain section (202) and a reflector (208) optically coupled to the gain section by the waveguide, the reflector to emit an optical output. A modulator (214) is optically coupled to the reflector by the waveguide, the modulator to modulate the optical output. And a control section (216) disposed along the waveguide.
Abstract:
An apparatus is provided which comprises: a magnetic junction (e.g., magnetic tunneling junction or spin valve); a structure adjacent to the magnetic junction, the structure comprising a magnet doped with a material (e.g., Ge, Ga, Si, F, O, N, Co, Bi, or Sb) to increase resistivity of a magnet of the magnetic junction; and an interconnect adjacent to the structure, wherein the interconnect comprises a material exhibiting spin orbit coupling.