Abstract:
An apparatus is provided which comprises: a magnetic junction having a magnet with a first magnetization; an interconnect adjacent to the magnetic junction, wherein the interconnect comprises a material exhibiting spin orbit coupling; and a structure adjacent to the interconnect such that the magnetic junction and structure are on opposite surfaces of the interconnect, wherein the structure comprises a magnet with a second magnetization substantially different from the first magnetization.
Abstract:
Embodiments are generally directed to Germanium CMOS (Complementary Metal-Oxide Semiconductor) structures with optimized quantum confinement and multiple threshold voltage operation. An embodiment of a CMOS device includes one or both of: one or more nMOS devices (n-type MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors)) or one or more pMOS devices (p-type MOSFETs). Each of each of the one or more nMOS devices or one or more pMOS devices includes a Germanium or Germanium alloy channel, a quantum confined channel structure, an optimum crystal orientation for the quantum confined channel structure, and a plurality of threshold voltage options.
Abstract:
Methods and apparatus for complex number generation and operation on a chip are disclosed. A disclosed logic device includes a first metal layer; a first channel of a semiconductor material on top of the first metal layer, both ends of the semiconductor material doped of a first type; a first gate dielectric adjacent the first channel; and a first plurality of gates arranged radially around the first channel and in contact with the first gate dielectric to separately control the first channel.
Abstract:
An apparatus is provided which comprises: a first magnetic junction; a second magnetic junction; an interconnect adjacent to the first and second magnetic junctions; a first structure adjacent to the interconnect such that the first structure is adjacent to the first magnetic junction, wherein the first structure comprises a magnet with a first magnetization relative to a plane of a device; and a second structure adjacent to the interconnect such that the second structure is adjacent the second magnetic junction, wherein the second structure comprises a magnet with a second magnetization relative to the x-y plane of the device.
Abstract:
An apparatus is provided which comprises: a magnetic junction having a free magnet layer which has perpendicular magnetic anisotropy (PMA), wherein the free magnet layer has anisotropy axis perpendicular to a plane of a device; and interconnect formed of a spin orbit material which is to provide spin current polarized perpendicular to an interface of the interconnect, wherein the interconnect is adjacent to the free magnet layer of the magnetic junction. An apparatus is provided which comprises: a magnet layer having PMA; and a layer formed of an interface normal spin orbit material, the layer being adjacent to one end of the magnet layer. Other embodiments may be described and/or claimed.
Abstract:
An apparatus is provided which comprises: a magnet having a first portion and a second portion; a first structure, a portion of which is adjacent to the first portion of the magnet, wherein the first structure is to provide an inverse spin orbit coupling effect; a second structure adjacent to the second portion, the second structure comprising a material having a hexagonal structure with magnetoelectric properties; and a third structure adjacent to the second structure, the third structure comprising a material having a hexagonal structure.
Abstract:
Described is an apparatus which comprises: a 4-state input magnet; a first spin channel region adjacent to the 4-state input magnet; a 4-state output magnet; a second spin channel region adjacent to the 4-state input and output magnets; and a third spin channel region adjacent to the 4-state output magnet. Described in an apparatus which comprises: a 4-state input magnet; a first filter layer adjacent to the 4-state input magnet; a first spin channel region adjacent to the first filter layer; a 4-state output magnet; a second filter layer adjacent to the 4-state output magnet; a second spin channel region adjacent to the first and second filter layers; and a third spin channel region adjacent to the second filter layer.
Abstract:
A flexible computing fabric and a method of forming thereof. The flexible computing fabric includes an electronic substrate including one or more channels and including at least two ends. At least one computational element is mounted on the electronic substrate between the two ends and at least one functional element is mounted on the electronic substrate between the two ends. The channels form an interconnect between the elements. In addition, the electronic substrate is flexible and exhibits a flexural modulus in the range of 0.1 GPa to 30 GPa.
Abstract:
A phase interpolator includes a first circuit to generate a first signal having a first phase delay and a second signal having a second phase delay and a phase mixer. The phase mixer is coupled to receive the first and second signals from the first circuit. The phase mixer includes multiple current drivers each including a current driver input coupled to selectively delay one of the first or second signals and a current driver output coupled to output a phase delayed signal. The current driver outputs of the current drivers are coupled together to combine the phase delayed signals from the current drivers to generate an output phase delayed signal having a phase interpolated from the first and second signals.
Abstract:
An apparatus is provided which comprises: a magnetic junction (e.g., magnetic tunneling junction or spin valve); a structure adjacent to the magnetic junction, the structure comprising a magnet doped with a material (e.g., Ge, Ga, Si, F, O, N, Co, Bi, or Sb) to increase resistivity of a magnet of the magnetic junction; and an interconnect adjacent to the structure, wherein the interconnect comprises a material exhibiting spin orbit coupling.