公开(公告)号：WO2016036355A1

公开(公告)日：2016-03-10

申请号：PCT/US2014/053812

申请日：2014-09-03

Applicant: INTEL CORPORATION

Inventor： MANIPATRUNI, Sasikanth ,  CHAUDHRY, Anurag ,  NIKONOV, Dmitri ,  MICHALAK, David ,  CEA, Stephen ,  YOUNG, Ian

IPC: G11C11/16 ,  H01L43/08

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/16 ,  H01F10/3222 ,  H01F41/302 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: The present disclosure relates to the fabrication of spin transfer torque memory devices and spin logic devices, wherein a strain engineered interface is formed within at least one magnet within these devices. In one embodiment, the spin transfer torque memory devices may include a free magnetic layer stack comprising a crystalline magnetic layer abutting a crystalline stressor layer. In another embodiment, the spin logic devices may include an input magnet, an output magnet; wherein at least one of the input magnet and the output magnet comprises a crystalline magnetic layer abutting crystalline stressor layer and/or the crystalline magnetic layer abutting a crystalline spin-coherent channel extending between the input magnet and the output magnet.

Abstract translation: 本公开涉及自旋转移力矩存储器件和自旋逻辑器件的制造，其中应变工程界面形成在这些器件内的至少一个磁体内。 在一个实施例中，自旋转移转矩存储器件可以包括自由磁性层堆叠，其包括邻接晶体应力层的结晶磁性层。 在另一个实施例中，自旋逻辑器件可以包括输入磁体，输出磁体; 其中所述输入磁体和所述输出磁体中的至少一个包括与所述输入磁体和所述输出磁体之间延伸的结晶自旋相干通道邻接的晶体应力层和/或所述结晶磁性层的结晶磁性层。