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    PROCESS FOR THE PRODUCTION OF MACROSCOPIC NANOSTRUCTURED PERMANENT MAGNETS WITH HIGH DENSITY OF MAGNETIC ENERGY AND CORRESPONDING MAGNETS
    1.
    发明申请
    PROCESS FOR THE PRODUCTION OF MACROSCOPIC NANOSTRUCTURED PERMANENT MAGNETS WITH HIGH DENSITY OF MAGNETIC ENERGY AND CORRESPONDING MAGNETS 审中-公开
    生产具有高密度磁能和相应磁铁的宏观纳米结构永久磁铁的方法

    公开(公告)号：WO2009150629A1

    公开(公告)日：2009-12-17

    申请号：PCT/IB2009/052502

    申请日：2009-06-11

    Applicant: POLITECNICO DI TORINO ,  CHIOLERIO, Alessandro ,  ALLIA, Paolo

    Inventor： CHIOLERIO, Alessandro ,  ALLIA, Paolo

    IPC: H01F41/16 ,  H01F10/32

    CPC classification number: H01F41/16 ,  B82Y25/00 ,  H01F1/0579 ,  H01F1/15333 ,  H01F10/3222

    Abstract: Process for the production of permanent magnets, of the kind that allows the production of nanostructured alloys (containing a volume fraction lower than 10% of the rare-earth-based stoichiometric compound) in the form of a multilayered material, comprising a stoichiometric hard phase containing rare earths localized in a series of stacked layers intercalated by soft ferromagnetic layers. According to the invention, comprises producing nanostructured elements along a respective vertical axis by means of an inkjet printing system and the parallelization of such productive phase, by means of matrices of productive elements.

    Abstract translation: 用于生产以多层材料形式制备纳米结构合金（含有低于稀土基化学计量化合物的10％的体积分数）的永磁体的方法，包括化学计量的硬相 含有稀土，位于由软铁磁层插入的一系列堆叠层中。 根据本发明，包括通过喷墨打印系统沿相应垂直轴线产生纳米结构元件，并通过生产元素的矩阵平行化生产阶段。

    SPIN TRANSFER TORQUE MEMORY AND LOGIC DEVICES HAVING AN INTERFACE FOR INDUCING A STRAIN ON A MAGNETIC LAYER THEREIN
    2.
    发明申请
    SPIN TRANSFER TORQUE MEMORY AND LOGIC DEVICES HAVING AN INTERFACE FOR INDUCING A STRAIN ON A MAGNETIC LAYER THEREIN 审中-公开
    具有用于诱导其磁性层上的应变的界面的转子转子记忆体和逻辑装置

    公开(公告)号：WO2016036355A1

    公开(公告)日：2016-03-10

    申请号：PCT/US2014/053812

    申请日：2014-09-03

    Applicant: INTEL CORPORATION

    Inventor： MANIPATRUNI, Sasikanth ,  CHAUDHRY, Anurag ,  NIKONOV, Dmitri ,  MICHALAK, David ,  CEA, Stephen ,  YOUNG, Ian

    IPC: G11C11/16 ,  H01L43/08

    CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/16 ,  H01F10/3222 ,  H01F41/302 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    Abstract: The present disclosure relates to the fabrication of spin transfer torque memory devices and spin logic devices, wherein a strain engineered interface is formed within at least one magnet within these devices. In one embodiment, the spin transfer torque memory devices may include a free magnetic layer stack comprising a crystalline magnetic layer abutting a crystalline stressor layer. In another embodiment, the spin logic devices may include an input magnet, an output magnet; wherein at least one of the input magnet and the output magnet comprises a crystalline magnetic layer abutting crystalline stressor layer and/or the crystalline magnetic layer abutting a crystalline spin-coherent channel extending between the input magnet and the output magnet.

    Abstract translation: 本公开涉及自旋转移力矩存储器件和自旋逻辑器件的制造，其中应变工程界面形成在这些器件内的至少一个磁体内。 在一个实施例中，自旋转移转矩存储器件可以包括自由磁性层堆叠，其包括邻接晶体应力层的结晶磁性层。 在另一个实施例中，自旋逻辑器件可以包括输入磁体，输出磁体; 其中所述输入磁体和所述输出磁体中的至少一个包括与所述输入磁体和所述输出磁体之间延伸的结晶自旋相干通道邻接的晶体应力层和/或所述结晶磁性层的结晶磁性层。

    MAGNETIC THIN FILM, PRODUCTION METHOD THEREFOR, EVALUATION METHOD THEREFOR AND MAGNETIC HEAD USING IT, MAGNETIC REFCORDING DEVICE AND MAGNETIC DEVICE
    4.
    发明申请
    MAGNETIC THIN FILM, PRODUCTION METHOD THEREFOR, EVALUATION METHOD THEREFOR AND MAGNETIC HEAD USING IT, MAGNETIC REFCORDING DEVICE AND MAGNETIC DEVICE 审中-公开
    磁薄膜，其制造方法及其使用的磁性磁头，磁性重构装置和磁性装置的评估方法

    公开(公告)号：WO01093286A1

    公开(公告)日：2001-12-06

    申请号：PCT/JP2000/008167

    申请日：2000-11-20

    IPC: G11B5/00 ,  G11B5/127 ,  G11B5/31 ,  G11B5/39 ,  G11B5/66 ,  G11B5/667 ,  G11B5/73 ,  H01F10/14 ,  H01F10/18 ,  H01F10/32 ,  H01F17/00 ,  H01P3/08

    CPC classification number: H01P3/088 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/00 ,  G11B5/1278 ,  G11B5/3109 ,  G11B5/3143 ,  G11B5/3909 ,  G11B5/3967 ,  G11B5/66 ,  G11B5/7325 ,  G11B2005/0002 ,  G11B2005/3996 ,  H01F10/14 ,  H01F10/18 ,  H01F10/3222 ,  H01F10/324 ,  H01F10/3286 ,  H01F17/0033 ,  Y10T428/115

    Abstract: A magnetic thin film which can be produced by the same dry process as that for a magnetoresistance element forming a reproduction head, and is provided with excellent soft magnetic characteristics suitable as a recording head magnetic pole material and having a saturation magnetic flux density of at least 2T and a coercive force of up to 2 Oe; a production method therefor; and a magnetic head using it, a magnetic recording device and a magnetic device. The magnetic thin film is characterized by being an iron carbide film having a martensite ( alpha ') phase as its main phase and containing at least carbon and iron as constituting elements. This iron carbide film is preferably in a form consisting of alpha ' single phase, is a magnetic thin film specified by having a diffraction peak from alpha '-phase's (002) plane observed as a main peak by an X-ray diffraction method or an electron beam diffraction method, is provided with a body-centered tetragonal structure, and has a difficult-to-magnetize c-axis approximately vertical to the film surface and an easy-to-magnetize c-plane approximately horizontal to the film surface.

    Abstract translation: 可以通过与形成再现头的磁阻元件相同的干法制造的磁性薄膜，并且具有适合作为记录头磁极材料的优异的软磁特性，并且具有至少具有饱和磁通密度 2T，矫顽力高达2Oe; 一种生产方法; 和使用它的磁头，磁记录装置和磁性装置。 磁性薄膜的特征在于以马氏体（α'）相为主相，至少含有碳和铁作为构成元素的碳化铁膜。 该碳化铁膜优选为由α'单相组成的形式，是通过利用X射线衍射法观察到的α'相（002）面作为主峰的衍射峰，或 电子束衍射法具有以体为中心的四边形结构，并且具有与膜表面大致垂直的难以磁化的c轴和与膜表面大致水平的易于磁化的c面。

    METHOD OF PRODUCING NIFE ALLOY FILMS HAVING MAGNETIC ANISOTROPY AND MAGNETIC STORAGE MEDIA INCLUDING SUCH FILMS
    6.
    发明申请
    METHOD OF PRODUCING NIFE ALLOY FILMS HAVING MAGNETIC ANISOTROPY AND MAGNETIC STORAGE MEDIA INCLUDING SUCH FILMS 审中-公开
    生产具有磁性异相的生物合金膜和包括这种膜的磁性储存介质的方法

    公开(公告)号：WO2004001779A1

    公开(公告)日：2003-12-31

    申请号：PCT/US2002/030750

    申请日：2002-09-26

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： KIM, Jai-Young ,  WU, Xiaowei

    IPC: H01F41/18

    CPC classification number: B82Y25/00 ,  G11B5/667 ,  G11B5/851 ,  H01F10/14 ,  H01F10/26 ,  H01F10/3222 ,  H01F41/18

    Abstract: A method of fabricating anisotropic magnetic films includes providing a substrate (18), sputtering a layer (24) of Ni x Fe y (where x ranges from 40 to 50 and y = (100-x)) onto a surface (28) of the substrate, and subjecting the layer of Ni x Fe y to a rotating magnetic field (36) during the sputtering deposition process. A magnetic storage medium comprising a substrate (128), a soft magnetic underlayer (126) supported by the substrate, the soft magnetic underlayer including Ni x Fe y (where x ranges from 40 to 50 and y = (100-x)) and having an easy axis in a circumferential direction and a hard axis in a radial direction, and a magnetically hard recording layer (124) supported by the soft magnetic underlayer, is also included.

    Abstract translation: 一种制造各向异性磁性膜的方法包括提供衬底（18），将NixFey（其中x为40至50，y =（100-x））的层（24）溅射到衬底的表面（28）上， 并在溅射沉积工艺期间使NixFey层经受旋转磁场（36）。 一种磁存储介质，包括基板（128），由基板支撑的软磁性底层（126），所述软磁性底层包括NixFey（其中x为40至50和y =（100-x）），并且具有容易 圆周方向的轴线和径向的硬轴，以及由软磁性底层支撑的磁性硬记录层（124）。

    THIN FILM RARE EARTH PERMANENT MAGNET, AND METHOD FOR MANUFACTURING THE PERMANENT MAGNET
    7.
    发明申请
    THIN FILM RARE EARTH PERMANENT MAGNET, AND METHOD FOR MANUFACTURING THE PERMANENT MAGNET 审中-公开
    薄膜稀土永磁体，以及制造永磁体的方法

    公开(公告)号：WO02015206A1

    公开(公告)日：2002-02-21

    申请号：PCT/JP2001/006562

    申请日：2001-07-30

    IPC: C23C14/00 ,  C23C14/16 ,  H01F10/00 ,  H01F10/12 ,  H01F10/28 ,  H01F10/32 ,  H01F41/30 ,  C23C14/14 ,  H01F1/04

    CPC classification number: H01F10/3222 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/00 ,  C23C14/16 ,  H01F10/007 ,  H01F10/126 ,  H01F10/28 ,  H01F10/3227 ,  H01F41/302 ,  Y10T428/1129 ,  Y10T428/115 ,  Y10T428/12861 ,  Y10T428/12868 ,  Y10T428/12875 ,  Y10T428/12931 ,  Y10T428/12937 ,  Y10T428/24975 ,  Y10T428/32 ,  Y10T428/325

    Abstract: A thin film rare earth permanent magnet capable of making the thin film by vapor growth anisotropic ina lamination direction, and a method for manufacturing the permanent magnet. There are repeated a number of operations to form atomic laminate units (13) by laminating a monoatomic layer (10) of a rare earth element on a substrate (1) of a non-magnetic material having a flat smoothness and then by laminating an atomic laminate (12) of a transient metal element having a plurality of monoatomic layers (11) of a transient metal element, so that the atomic laminate units (13) of a characteristic construction are laminated in a plurality of layers. As a result, each atomic laminate (12) has an easily magnetizable axis in the laminate direction of the monoatomic layers (11), and is sandwiched between the monoatomic layers (10, 10) of the rare earth element so that an inverse magnetic domain is suppressed to establish a strong coercive force. Moreover, the content of the transient metal element to the rare earth metal is raised to improve the residual magnetic flux density drastically.

    Abstract translation: 能够通过层叠方向的各向异性气相生长来制造薄膜的薄膜稀土永久磁铁及其制造方法。 通过在具有平坦平滑度的非磁性材料的基板（1）上层叠稀土元素的单原子层（10），然后层叠原子层叠单元（13），重复多次操作以形成原子层压单元（13） 具有多个瞬态金属元素的单原子层（11）的瞬态金属元件的层压体（12），使得特征结构的原子层压单元（13）以多层层压。 结果，每个原子层压板（12）在单原子层（11）的层叠方向上具有容易磁化的轴线，并被夹在稀土元素的单原子层（10,10）之间，使得反磁畴 被压制，建立强大的强制力量。 此外，提高了瞬态金属元素对稀土金属的含量，从而显着提高了剩余磁通密度。

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