公开(公告)号：WO2013121254A1

公开(公告)日：2013-08-22

申请号：PCT/IB2012/053899

申请日：2012-07-31

Applicant: KADOOR MICROELECTRONICS LTD. ,  FELDMAN, Shai

Inventor： FELDMAN, Shai ,  AHARON, Oren

IPC: H01H29/00

CPC classification number: H01H29/06 ,  B81B2201/018 ,  B81C1/00333 ,  B81C1/00341 ,  B81C2203/0136 ,  B81C2203/0145 ,  H01H29/00 ,  H01H2029/008 ,  H01H2203/028

Abstract: Devices for switching or tuning of an electrical circuit comprise a liquid metal (LM) drop confined inside a sealed cavity. The cavity is formed at least partially inside a microelectronics layered structure which includes metal, dielectric and semiconductor layers. The microelectronics layered structure may be prepared using a VLSI/CMOS technology. Some of the VLSI/CMOS metal layers or metalized vias may be used for conduction lines contacted by the LM drop or as RF transmission lines opened or closed by the LM drop.

Abstract translation: 用于切换或调谐电路的装置包括限定在密封空腔内的液态金属（LM）液滴。 空腔至少部分地形成在包括金属，电介质和半导体层的微电子分层结构内部。 微电子分层结构可以使用VLSI / CMOS技术来制备。 VLSI / CMOS金属层或金属化通孔中的一些可以用于与LM压降接触的导线，或者作为由LM压降打开或闭合的RF传输线。

公开(公告)号：WO2013121253A1

公开(公告)日：2013-08-22

申请号：PCT/IB2012/053898

申请日：2012-07-31

Applicant: KADOOR MICROELECTRONICS LTD. ,  AHARON, Oren

Inventor： AHARON, Oren ,  FELDMAN, Shai

IPC: H01H29/00 ,  B81C1/00

CPC classification number: H01H29/06 ,  B81B2201/018 ,  B81C1/00333 ,  B81C1/00341 ,  B81C2203/0136 ,  B81C2203/0145 ,  H01H29/00 ,  H01H2029/008 ,  H01H2203/028

Abstract: Methods for forming an enclosed liquid metal (LM) drop inside a sealed cavity by formation of LM components as solid LM component layers and reaction of the solid LM component layers to form the LM drop. In some embodiments, the cavity has boundaries defined by layers or features of a microelectronics (e.g. VLSI-CMOS) or MEMS technology. In such embodiments, the methods comprise implementing an initial microelectronics or MEMS process to form the layers or features and the cavity, sequential or side by side formation of solid LM component layers in the cavity, sealing of the cavity to provide a closed space and reaction of the solid LM components to form a LM alloy in the general shape of a drop. In some embodiments, nanometric reaction barriers may be inserted between the solid LM component layers to lower the LM eutectic formation temperature.

Abstract translation: 通过形成作为固体LM组分层的LM组分形成密封空腔内的封闭液态金属（LM）滴的方法和固体LM组分层的反应形成LM滴。 在一些实施例中，空腔具有由微电子学（例如VLSI-CMOS）或MEMS技术的层或特征限定的边界。 在这样的实施例中，所述方法包括实现初始微电子学或MEMS工艺以形成所述层或特征，以及所述空腔，所述空腔中的固体LM组分层的顺序或并排形成，所述腔的密封以提供封闭空间和反应 的固体LM组分以形成一般形状的液滴的LM合金。 在一些实施方案中，可以在固体LM组分层之间插入纳米反应阻挡层以降低LM共晶形成温度。