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公开(公告)号：WO2021181269A1
公开(公告)日：2021-09-16
申请号：PCT/IB2021/051949
申请日：2021-03-09
Inventor： SURYA, Sandeep G. , SHEKHAH, Osama , YUVARAJA, Saravanan , EDDAOUDI, Mohamed , SALAMA, Khaled N.
IPC: G01N27/22 , G01N27/414
Abstract: A moisture sensor (400) is configured to be deployed in soil for measuring a moisture content. The moisture sensor (400) includes a housing (402); a transistor (200) configured to interact with water (240) from the soil; a power source (410) configured to generate an electrical current; and a processing unit (420) configured to receive a reading from the transistor (200), and to calculate the moisture content of the soil based on the reading. The transistor (200) includes a metal-organic framework, MOF, (100).
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公开(公告)号：WO2021070021A1
公开(公告)日：2021-04-15
申请号：PCT/IB2020/059220
申请日：2020-10-01
Inventor： VIJJAPU, Mani Teja , SURYA, Sandeep G. , YUVARAJA, Saravanan , SALAMA, Khaled Nabil
IPC: G01N27/414 , G01N33/00
Abstract: A gas sensor (100) includes a gate electrode (102); a dielectric layer (104) covering one surface of the gate electrode (102); an indium (In) gallium (Ga) zinc (Zn) oxide (O) (IGZO) thin-film (106) formed over the dielectric layer (104), and first and second metallic electrodes (108A, 108B) formed on a surface of the IGZO thin-film (106) to act as source and drain, respectively. The IGZO thin-film (106) has an In concentration of 11% +/- 3%, Ga concentration of 11% +/- 3%, Zn concentration of 7% +/- 3%, and O concentration of 71% +/- 3%, with a sum of the concentrations being 100%, and the gas interacts with the IGZO thin-film (106) and changes a current through the IGZO thin-film (106).
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公开(公告)号：WO2023042091A1
公开(公告)日：2023-03-23
申请号：PCT/IB2022/058660
申请日：2022-09-14
Inventor： LI, Xiaohang , YUVARAJA, Saravanan
IPC: H01L29/775 , H01L29/786 , H01L29/06 , H01L21/336 , H01L29/24 , H01L29/423 , H01L27/088 , B82Y10/00
Abstract: An ambipolar, gate all around, semiconductor-based transistor (600) includes a substrate (602), a first-type channel structure (106) of a first-type material located on the substrate (602), the first-type channel structure (106) having a gate region, a source region, and a drain region, a second-type channel structure (310) of a second- type material completely surrounding the gate region of the first-type channel structure (106), but not present on the source region and the drain region. Furthermore, a dielectric material (108) fully surrounds the second-type material (310), a gate electrode (110) completely surrounds the dielectric material (108)., a source electrode is located on the source region and a drain electrode is located on the drain region. The first and second materials are semiconductor oxides, preferably Ga2O3 and NiO, the first-type material is one of p-or n-type and the second-type material is the other of the p- or n-type.
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4.发明申请
公开(公告)号：WO2021156733A1
公开(公告)日：2021-08-12
申请号：PCT/IB2021/050804
申请日：2021-02-01
Inventor： YUVARAJA, Saravanan , SURYA, Sandeep G. , VIJJAPU, Mani Teja , SALAMA, Khaled Nabil , CHERNIKOVA, Valeriya , SHEKHAH, Osama , EDDAOUDI, Mohamed
IPC: G01N27/414 , G01N33/00 , B82Y15/00 , B01J20/22
Abstract: An NO2 detection device (200) includes a substrate (102/104); a drain (112) formed on the substrate (102/104); a source (114) formed on the substrate (102/104); a p-type polymer semiconductor layer (110) formed on the substrate (102/104), between the drain (112) and the source (114); and an n-type metal-organic framework layer (120) located over the p-type polymer semiconductor layer (110). The n-type metal-organic framework layer (120) has apertures (122) having a size larger than a size of the NO2 molecules so that the NO2 molecules pass through the n-type metal-organic framework layer (120) to arrive at the p-type polymer semiconductor layer (110) to increase an electrical current.
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