公开(公告)号：WO2021225999A1

公开(公告)日：2021-11-11

申请号：PCT/US2021/030535

申请日：2021-05-04

Applicant: KLA CORPORATION

Inventor： CHEN, Hong ,  WU, Kenong ,  LI, Xiaochun ,  SMITH, James A. ,  SHIFRIN, Eugene ,  LUO, Qing ,  COOK, Michael ,  SI, Wilson Wei ,  YU, Leon ,  BRAUER, Bjorn ,  PATWARY, Nurmohammed ,  TROY, Neil ,  YNZUNZA, Ramon

IPC: G03F7/20 ,  G03F1/84 ,  G01N21/956 ,  G01N21/95 ,  G01N21/88 ,  G06K9/62 ,  G06T5/00

Abstract: Systems and methods for detecting defects on a reticle are provided. One system includes computer subsystem(s) configured for performing at least one repeater defect detection step in front-end processing during an inspection process performed on a wafer having features printed in a lithography process using a reticle. The at least one repeater defect detection step performed in the front-end processing includes identifying any defects detected at corresponding locations in two or more test images by double detection and any defects detected by stacked defect detection as first repeater defect candidates. One or more additional repeater defect detections may be performed on the first repeater defect candidates to generate final repeater defect candidates and identify defects on the reticle from the final repeater defect candidates.

公开(公告)号：WO2020132376A1

公开(公告)日：2020-06-25

申请号：PCT/US2019/067701

申请日：2019-12-20

Applicant: KLA CORPORATION

Inventor： SHCHEMELININ, Anatoly ,  BEZEL, Ilya ,  SHIFRIN, Eugene

IPC: G01N21/956 ,  G01N21/95 ,  G06T7/00 ,  G01N21/88

Abstract: Methods and systems for enhanced defect detection based on images collected by at least two imaging detectors at different times are described. In some embodiments, the time between image measurements is at least 100 microseconds and no more than 10 milliseconds. In one aspect, one or more defects of interest are identified based on a composite image of a measured area generated based on a difference between collected images. In a further aspect, measurement conditions associated with the each imaged location are adjusted to be different for measurements performed by at least two imaging detectors at different times. In some embodiments, the measurement conditions are adjusted during the time between measurements by different imaging detectors. Exemplary changes of measurement conditions include environmental changes at the wafer under measurement and changes made to the optical configuration of the inspection system.