METHOD AND APPARATUS FOR CONTROLLING CHAMBER SURFACES IN A SEMICONDUCTOR PROCESSING REACTOR
    1.
    发明申请
    METHOD AND APPARATUS FOR CONTROLLING CHAMBER SURFACES IN A SEMICONDUCTOR PROCESSING REACTOR 审中-公开
    用于控制半导体加工反应器中的室表面的方法和装置

    公开(公告)号:WO0123636A9

    公开(公告)日:2002-08-15

    申请号:PCT/US0041001

    申请日:2000-09-26

    Applicant: LAM RES CORP

    CPC classification number: C23C14/564 C23C16/4404

    Abstract: A system for processing a substrate using a process gas is disclosed. The system forming volatile and non-volatile species during processing. The system includes a process chamber within which the processing is performed. The process chamber being configured to enclose the substrate, and having a chamber surface proximate to the substrate. The system further includes a chamber surface protection arrangement configured for shielding the surface from the non-volatile species formed during processing. The chamber surface protection arrangement includes an adsorbing film that is disposed inside the process chamber and substantially adjacent to the chamber surface. The adsorbing film being configured to prevent the non-volatile species from contacting the chamber surface, and arranged to adsorb a substantial portion of the non-volatile species that contact the adsorbing film. The adsorbing film further being arranged for removing the adsorbed non-volatile species from the process chamber.

    Abstract translation: 公开了一种使用处理气体处理衬底的系统。 该系统在加工过程中形成挥发性和非挥发性物质。 该系统包括处理室,在该处理室内执行处理。 处理室被配置为封闭基板,并且具有靠近基板的室表面。 该系统还包括腔表面保护装置,其被配置为将表面与处理期间形成的非挥发性物质进行屏蔽。 腔室表面保护装置包括设置在处理室内部并基本上邻近腔室表面的吸附膜。 吸附膜被配置为防止非挥发性物质接触室表面,并且被布置成吸附大部分与吸附膜接触的非挥发性物质。 吸附膜进一步被布置用于从处理室去除吸附的非挥发性物质。

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