公开(公告)号：WO2006039090A2

公开(公告)日：2006-04-13

申请号：PCT/US2005032411

申请日：2005-09-13

Applicant: LAM RES CORP ,  LEONTE OANA ,  CHEBI ROBERT

Inventor： LEONTE OANA ,  CHEBI ROBERT

IPC: C23G1/00 ,  C11D7/32

CPC classification number: C11D3/044 ,  C11D1/523 ,  C11D1/90 ,  C11D3/2058 ,  C11D3/2079 ,  C11D3/30 ,  C11D3/33 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/261 ,  C11D7/265 ,  C11D7/3218 ,  C11D7/3245 ,  C11D11/0047 ,  H01L21/02052 ,  H01L21/0206

Abstract: A solution for cleaning silicon semiconductors or silicon oxides, and methods for cleaning silicon semiconductors or silicon oxides using the solution, is disclosed. The solution includes hydrogen peroxide, ammonium hydroxide, an alkanolamine, and at least one of a tetraalkylammonium hydroxide, an alkanolamide, an amido-betaine, an c ca dihydroxyphenol, a carboxylic acid, a phosphonic acid, a chelating agent or a surfactant. The weight ratio of ammonium hydroxide to peroxide to water is between about 1:1:5 and 1:1-4:50, the weight ratio of ammonium hydroxide to water is between 1:5 and 1:50, and the molar ratio of component A to ammonium hydroxide is between 1:10 and 1:5000 is disclosed. The solution can achieve the efficiency equivalent to that of the conventional RCA two-step cleaning solution within a shorter time by one step preserving the silicon and silicon oxide substrate integrity and effectively remove contaminants such as organics, particles and metals from the surfaces of silicon semiconductors and silicon oxides without using strong acids such as HCI and sulfuric acid.

Abstract translation: 公开了一种用于清洁硅半导体或硅氧化物的解决方案，以及使用该溶液来清洗硅半导体或氧化硅的方法。 溶液包括过氧化氢，氢氧化铵，链烷醇胺，以及四烷基氢氧化铵，链烷醇酰胺，酰氨基 - 甜菜碱，c-二羟基苯酚，羧酸，膦酸，螯合剂或表面活性剂中的至少一种。 氢氧化铵与过氧化氢与水的重量比约为1:1:5:1:1-4:50，氢氧化铵与水的重量比为1:5至1:50，摩尔比 组分A与氢氧化铵的摩尔比为1:10至1:5000。 该解决方案可以在较短时间内实现与传统RCA两步清洗溶液相当的效率，通过一步保持硅和氧化硅底物的完整性，并有效地从硅半导体表面去除有机物，颗粒和金属等污染物 和氧化硅，而不使用强酸如HCl和硫酸。