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公开(公告)号:WO2021150331A1
公开(公告)日:2021-07-29
申请号:PCT/US2020/065717
申请日:2020-12-17
Applicant: LAM RESEARCH CORPORATION
Inventor: GANANY, Alon , AUSTIN, Dustin Zachary , BATZER, Rachel , SINGHAL, Akhil
Abstract: Processing methods and apparatus for depositing a protective layer on internal surfaces of a reaction chamber are provided. One method may include depositing, while no wafers are present in the reaction chamber having interior surfaces, a first layer of protective material onto the interior surfaces, the interior surfaces comprising a first material, processing, after the depositing the first layer, a portion of a batch of wafers within a reaction chamber, measuring an amount of the first material in the reaction chamber during processing the portion of the batch of wafers, or on one of the wafers in the portion of the batch of wafers, determining that the first amount exceeds a threshold, and depositing, in response to determining that the first amount exceeds the threshold and while no wafers are present in the reaction chamber, a second layer of protective material onto the interior surfaces of the reaction chamber.
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公开(公告)号:WO2019113478A1
公开(公告)日:2019-06-13
申请号:PCT/US2018/064524
申请日:2018-12-07
Applicant: LAM RESEARCH CORPORATION
Inventor: BATZER, Rachel , GUI, Zhe , SAVITHRA, Galbokka Hewage Layan
IPC: H01L21/67 , C23C16/455 , H01L21/027 , H01L21/02
Abstract: A showerhead for a substrate processing system includes a lower surface, a plasma-facing upper surface, a gas plenum defined between the lower surface and the upper surface, and a plurality of injectors distributed on the lower surface, wherein the plurality of injectors are in fluid communication with the gas plenum. A plurality of through holes extends from the upper surface to the lower surface. Selected ones of the plurality of through holes have a diameter that is different from a diameter of remaining ones of the plurality of through holes. The diameter of the selected ones of the plurality of through holes is predetermined in accordance with a desired ratio of respective gases provided via the selected ones of the plurality of through holes and the remaining ones of the plurality of through holes.
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公开(公告)号:WO2018112197A1
公开(公告)日:2018-06-21
申请号:PCT/US2017/066411
申请日:2017-12-14
Applicant: LAM RESEARCH CORPORATION
Inventor: BATZER, Rachel , QUI, Huatan , VARADARAJAN, Bhadri , BREILING, Patrick Girard , GONG, Bo , SCHLOSSER, Will , GUI, Zhe , TAN, Taide , HOHN, Geoffrey
IPC: H01L21/67 , H01L21/687
Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum including an inlet to receive heat transfer fluid and a plurality of flow channels to direct the heat transfer fluid through a center portion of the showerhead to an outlet to control a temperature of the showerhead, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.
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