公开(公告)号：WO2018236614A1

公开(公告)日：2018-12-27

申请号：PCT/US2018/036934

申请日：2018-06-11

Applicant: LAM RESEARCH CORPORATION

Inventor： GUHA, Joydeep ,  REDDY, Sirish K. ,  CHATTOPADHYAY, Kaushik ,  MOUNTSIER, Thomas W. ,  EPPLER, Aaron ,  LILL, Thorsten ,  VAHEDI, Vahid ,  SINGH, Harmeet

IPC: H01L21/311 ,  H01L21/3213 ,  H01L21/3065 ,  H01L21/033

CPC classification number: H01L21/31144 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/76802

Abstract: A method for etching features in an OMOM stack with first layer of silicon oxide, a second layer of a metal containing material over the first layer, a third layer of silicon oxide over the second layer, and a fourth layer of a metal containing material over the third layer is provided. A hardmask is formed over the stack. The hardmask is patterned. The OMOM stack is etched through the hardmask.