公开(公告)号：WO2022035629A1

公开(公告)日：2022-02-17

申请号：PCT/US2021/044122

申请日：2021-08-02

Applicant: LAM RESEARCH CORPORATION

Inventor： SINGH, Harmeet ,  MITROVIC, Slobodan ,  EHRLICH, Darrell ,  WU, Benny

IPC: H01L21/67 ,  H01L21/683 ,  H05B3/14 ,  H05B3/28 ,  C23C16/458 ,  H01J37/32

Abstract: A substrate support assembly for supporting a substrate includes a baseplate, a ceramic plate arranged on the baseplate, and N resistive heaters arranged in X rows and Y columns and coupled to the ceramic plate. X, Y, and N are integers greater than 1, and N is less than or equal to X*Y. Each of the N resistive heaters have a first terminal and a second terminal. The ceramic plate includes Y conductors arranged in a first layer of the ceramic plate, and X conductors arranged in a second layer of the ceramic plate. The first terminals of each resistive heater in one of the X rows are directly connected to the Y conductors, respectively, by first vias. Second terminals of each resistive heater in the one of the X rows are directly connected to one of the X conductors by second vias.

公开(公告)号：WO2018236614A1

公开(公告)日：2018-12-27

申请号：PCT/US2018/036934

申请日：2018-06-11

Applicant: LAM RESEARCH CORPORATION

Inventor： GUHA, Joydeep ,  REDDY, Sirish K. ,  CHATTOPADHYAY, Kaushik ,  MOUNTSIER, Thomas W. ,  EPPLER, Aaron ,  LILL, Thorsten ,  VAHEDI, Vahid ,  SINGH, Harmeet

IPC: H01L21/311 ,  H01L21/3213 ,  H01L21/3065 ,  H01L21/033

CPC classification number: H01L21/31144 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/76802

Abstract: A method for etching features in an OMOM stack with first layer of silicon oxide, a second layer of a metal containing material over the first layer, a third layer of silicon oxide over the second layer, and a fourth layer of a metal containing material over the third layer is provided. A hardmask is formed over the stack. The hardmask is patterned. The OMOM stack is etched through the hardmask.

公开(公告)号：WO2011081645A2

公开(公告)日：2011-07-07

申请号：PCT/US2010/003149

申请日：2010-12-13

Applicant: LAM RESEARCH CORPORATION ,  GAFF, Keith William ,  SINGH, Harmeet ,  COMENDANT, Keith ,  VAHEDI, Vahid

Inventor： GAFF, Keith William ,  SINGH, Harmeet ,  COMENDANT, Keith ,  VAHEDI, Vahid

IPC: H01L21/3065

CPC classification number: H01J37/20 ,  H01L21/67248 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Abstract A plasma etching system having a substrate support assembly with multiple independently controllable heater zones. The plasma etching system is configured to control etching temperature of predetermined locations so that pre-etch and/or post-etch non-uniformity of critical device parameters can be compensated for.

Abstract translation: 摘要一种等离子体蚀刻系统，其具有具有多个可独立控制的加热器区域的基板支撑组件。 等离子体蚀刻系统被配置为控制预定位置的蚀刻温度，从而可以补偿临界器件参数的预蚀刻和/或蚀刻后不均匀性。

公开(公告)号：WO2010062345A2

公开(公告)日：2010-06-03

申请号：PCT/US2009/005857

申请日：2009-10-29

Applicant: LAM RESEARCH CORPORATION ,  AUGUSTINO, Jason ,  CHAU, Quan ,  GAFF, Keith William ,  HA, Hanh Tuong ,  RICHARDSON, Brett C. ,  SINGH, Harmeet

Inventor： AUGUSTINO, Jason ,  CHAU, Quan ,  GAFF, Keith William ,  HA, Hanh Tuong ,  RICHARDSON, Brett C. ,  SINGH, Harmeet

IPC: H05H1/34 ,  H01L21/3065

CPC classification number: H01J37/20 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/3255 ,  H01J37/32642 ,  H01J37/32715

Abstract: A lower electrode assembly for use in a plasma processing chamber comprises a metal base and upper and lower edge rings. The metal base comprises metal plates brazed together and forming a brazed line on a lower side surface of the base, an edge ring support surface extending horizontally inwardly from the lower side surface and an upper side surface above the edge ring support surface. The upper edge ring comprises a lower surface mounted on the edge ring support surface and the lower edge ring surrounds the lower side surface of the base with a gap between opposed surfaces of the upper and lower edge rings and between the lower edge ring and the outer periphery of the base. The gap has an aspect ratio of total gap length to average gap width sufficient to impede arcing at the location of the braze line.

Abstract translation: 用于等离子体处理室中的下电极组件包括金属底座和上边缘环和下边缘环。 金属基座包括钎焊在一起并在基座的下侧表面上形成钎焊线的金属板，从下侧表面水平向内延伸的边缘环支撑表面以及边缘环支撑表面上方的上侧表面。 上边缘环包括安装在边缘环支撑表面上的下表面，并且下边缘环围绕底座的下侧表面，在上边缘环和下边缘环的相对表面之间以及下边缘环与外边缘之间具有间隙 基地周围。 该间隙的总间隙长度与平均间隙宽度的纵横比足以阻止钎焊线处的电弧。

公开(公告)号：WO2010055441A2

公开(公告)日：2010-05-20

申请号：PCT/IB2009/054876

申请日：2009-11-03

Applicant: LAM RESEARCH CORPORATION ,  LAM RESEARCH AG ,  SINGH, Harmeet ,  COMENDANT, Keith

Inventor： SINGH, Harmeet ,  COMENDANT, Keith

IPC: C23C14/50 ,  C23C16/46

CPC classification number: H01L21/67248 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C23C16/50 ,  C23C16/52 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/6831

Abstract: A substrate support useful in a reaction chamber of a plasma processing apparatus is provided. The substrate support comprises a base member and a heat transfer member overlying the base member. The heat transfer member has multiple zones to individually heat and cool each zone of the heat transfer member. An electrostatic chuck overlies the heat transfer member. The electrostatic chuck has a support surface for supporting a substrate in a reaction chamber of the plasma processing apparatus. A source of cold liquid and a source of hot liquid are in fluid communication with flow passages in each zone. A valve arrangement is operable to independently control temperature of the liquid by adjusting a mixing ratio of the hot liquid to the cold liquid circulating in the flow passages. In another embodiment, heating elements along a supply line and transfer lines heat a liquid from a liquid source before circulating in the flow passages.

Abstract translation: 提供了一种用于等离子体处理装置的反应室中的基板支架。 衬底支撑件包括基部构件和覆盖基底构件的传热构件。 传热构件具有多个区域以分别加热和冷却传热构件的每个区域。 静电吸盘覆盖传热部件。 静电卡盘具有用于在等离子体处理装置的反应室中支撑基板的支撑表面。 冷液源和热液体源与每个区域中的流动通道流体连通。 阀装置可操作以通过调节热液体与在流动通道中循环的冷液体的混合比来独立地控制液体的温度。 在另一个实施例中，沿着供应管线和输送管线的加热元件在流动通道中循环之前加热来自液体源的液体。

公开(公告)号：WO2008049024A1

公开(公告)日：2008-04-24

申请号：PCT/US2007/081682

申请日：2007-10-17

Applicant: LAM RESEARCH CORPORATION ,  VAHEDI, Vahid ,  DAUGHERTY, John E ,  SINGH, Harmeet ,  CHEN, Anthony

Inventor： VAHEDI, Vahid ,  DAUGHERTY, John E ,  SINGH, Harmeet ,  CHEN, Anthony

IPC: H01L21/3065

CPC classification number: H01L21/32136 ,  C03C15/00 ,  C03C23/006 ,  H01J37/32623 ,  H01J37/32642

Abstract: In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.

Abstract translation: 在等离子体处理系统中，公开了一组等离子体处理步骤的调谐方法。 该方法包括在等离子体处理系统的等离子体反应器中击打包含中性粒子和离子的第一等离子体。 该方法还包括在第一蚀刻步骤中蚀刻在衬底上的一组层; 将可移动均匀环定位在基底周围，其中均匀环的底表面与基底的顶表面大致相同的高度; 并且在等离子体处理系统的等离子体反应器中击打基本上由中性体组成的第二等离子体。 该方法还包括在第二蚀刻步骤中蚀刻衬底上的这组层; 并且其中第一步骤中的蚀刻和第二步骤中的蚀刻基本上是均匀的。

公开(公告)号：WO2022173557A1

公开(公告)日：2022-08-18

申请号：PCT/US2022/012618

申请日：2022-01-14

Applicant: LAM RESEARCH CORPORATION

Inventor： MANKIDY, Pratik ,  JAEWON, Kim ,  SINGH, Harmeet ,  LI, Ming

IPC: H01J37/32

Abstract: A confinement ring for use in a plasma processing chamber includes an upper horizontal section, a vertical section, and a lower horizontal section. The upper horizontal section extends between an upper inner radius and an outer radius of the confinement ring, The lower horizontal section extends between an lower inner radius and the outer radius of the confinement ring, and includes an extension section that extends to the lower inner radius. A top surface of the lower horizontal section provides for an angle down toward the lower inner radius. The vertical section is disposed between the outer radius and an inside radius of the confinement ring. The vertical section connects the upper horizontal section to the lower horizontal section of the confinement ring.

公开(公告)号：WO2013124756A1

公开(公告)日：2013-08-29

申请号：PCT/IB2013/051010

申请日：2013-02-07

Applicant: LAM RESEARCH CORPORATION ,  LAM RESEARCH AG

Inventor： VALCORE, John ,  SINGH, Harmeet ,  LYNDAKER, Bradford J.

IPC: H05H1/24 ,  H05H1/46

CPC classification number: H01J37/32183 ,  H01J37/32146 ,  H01J37/32174

Abstract: A synchronized pulsing arrangement for providing at least two synchronized pulsing RF signals to a plasma processing chamber of a plasma processing system is provided. The arrangement includes a first RF generator for providing a first RF signal. The first RF signal is provided to the plasma processing chamber to energize a plasma therein, the first RF signal representing a pulsing RF signal. The arrangement also includes a second RF generator for providing a second RF signal to the plasma processing chamber. The second RF generator has a sensor subsystem for detecting values of at least one parameter associated with the plasma processing chamber that reflects whether the first RF signal is pulsed high or pulsed low and a pulse controlling subsystem for pulsing the second RF signal responsive to the detecting the values of at least one parameter.

Abstract translation: 提供了一种用于向等离子体处理系统的等离子体处理室提供至少两个同步脉冲RF信号的同步脉冲装置。 该装置包括用于提供第一RF信号的第一RF发生器。 第一RF信号被提供给等离子体处理室以激励其中的等离子体，第一RF信号表示脉冲RF信号。 该装置还包括用于向等离子体处理室提供第二RF信号的第二RF发生器。 第二RF发生器具有用于检测与等离子体处理室相关联的至少一个参数的值的传感器子系统，其反映第一RF信号是高脉冲还是脉冲低脉冲，以及响应于检测脉冲控制第二RF信号的脉冲控制子系统 至少有一个参数的值。

公开(公告)号：WO2013039718A1

公开(公告)日：2013-03-21

申请号：PCT/US2012/053386

申请日：2012-08-31

Applicant: LAM RESEARCH CORPORATION ,  SINGH, Harmeet ,  GAFF, Keith ,  RICHARDSON, Brett ,  LEE, Sung

Inventor： SINGH, Harmeet ,  GAFF, Keith ,  RICHARDSON, Brett ,  LEE, Sung

IPC: C23C16/00

CPC classification number: H01J37/32669 ,  H01F7/20 ,  H01J37/32715 ,  H01L21/31116 ,  H01L21/67069

Abstract: A component of a substrate support assembly such as a substrate support or edge ring includes a plurality of current loops incorporated in the substrate support and/or the edge ring. The current loops are laterally spaced apart and extend less than halfway around the substrate support or edge ring with each of the current loops being operable to induce a localized DC magnetic field of field strength less than 20 Gauss above a substrate supported on the substrate support during plasma processing of the substrate. When supplied with DC power, the current loops generate localized DC magnetic fields over the semiconductor substrate so as to locally affect the plasma and compensate for non-uniformity in plasma processing across the substrate.

Abstract translation: 诸如衬底支撑件或边缘环的衬底支撑组件的部件包括结合在衬底支撑件和/或边缘环中的多个电流回路。 电流环横向间隔开并且延伸小于基板支撑件或边缘环周围的一半，其中每个电流回路可操作以在基板支撑件上支撑的基板上方引起小于20高斯的场强的局部DC磁场， 基板的等离子体处理。 当提供直流电源时，电流环路在半导体衬底上产生局部DC磁场，以便局部地影响等离子体并且补偿横跨衬底的等离子体处理的不均匀性。

公开(公告)号：WO2012162051A1

公开(公告)日：2012-11-29

申请号：PCT/US2012/038081

申请日：2012-05-16

Applicant: LAM RESEARCH CORPORATION ,  SINGH, Harmeet

Inventor： SINGH, Harmeet

IPC: H01L21/00

CPC classification number: H01L21/67126 ,  F16J15/062

Abstract: A vacuum seal arrangement comprising a one-piece elastomeric gasket having at least first and second O-rings interconnected by a planar web, a first part having a first planar sealing surface with a dove-tail groove therein holding the first O-ring and a square walled groove therein holding the second O-ring, the first part further including at least one passage in the first planar sealing surface surrounded by the first O-ring or second O-ring.

Abstract translation: 一种真空密封装置，包括具有通过平面腹板互连的至少第一和第二O形环的单件式弹性垫圈，第一部分具有第一平面密封表面，其中带有第一O形环的鸽尾槽， 其中保持第二O形环的方形壁槽，第一部分还包括由第一O形环或第二O形环包围的第一平面密封表面中的至少一个通道。