公开(公告)号：WO2019057786A1

公开(公告)日：2019-03-28

申请号：PCT/EP2018/075370

申请日：2018-09-19

Applicant: LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST)

Inventor： CAICEDO PANQUEVA, Nohora ,  LENOBLE, Damien ,  LETURCQ, Renaud ,  THOMANN, Jean-Sébastien

IPC: G01N27/12 ,  G01N33/00 ,  B82Y30/00 ,  B82Y40/00

Abstract: The invention is directed to a method for producing a gas sensor (2) comprising a step of providing a substrate (4) with two coplanar electrodes (6) and a step of forming a ZnO nanowires network (8) on said two electrodes (6). The step of forming a ZnO nanowires network (8) on said two electrodes (6) is performed as follows: synthesizing ZnO nanowires with a liquid phase sequential growth method; dispersing said synthetized nanowires in a solvent; drop casting the solution containing the solvent and the ZnO nanowires on the electrodes; drying the solution at a temperature inferior to 85°C. The invention is also directed to a gas sensor working at low temperature such as room temperature.

公开(公告)号：WO2018060240A1

公开(公告)日：2018-04-05

申请号：PCT/EP2017/074483

申请日：2017-09-27

Applicant: LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST)

Inventor： CREPELLIERE, Jonathan ,  BAHLAWANE, Naoufal ,  LENOBLE, Damien ,  LETURCQ, Renaud

IPC: C23C16/40 ,  H01L21/285 ,  H01L29/786

CPC classification number: C23C16/407 ,  C23C16/408 ,  H01L31/032 ,  H01L31/109

Abstract: The first object of the invention is directed to a UV detector comprising a p-n junction with a substrate coated with a layer of p-type oxide material, said p-type oxide material being coated with a layer of n-type oxide material which is ZnO. Said UV detector is remarkable in that said p-type oxide material consists of CuCrO2, wherein the ratio Cr/Cu ratio within said layer of p-type oxide material is >1. The second object of the invention is directed to a method for producing said UV-visible detector. It comprises the step of assembling at least one p-n junction with optical means adapted for sensing UV light. The use of said UV-visible detector as flame detector is also disclosed.

Abstract translation: 本发明的第一个目的涉及一种UV检测器，其包括具有涂覆有p型氧化物材料层的衬底的pn结，所述p型氧化物材料涂覆有 n型氧化物材料是ZnO。 所述UV检测器的显着之处在于所述p型氧化物材料由CuCrO 2组成，其中所述p型氧化物材料层内的比率Cr / Cu比率> 1。 本发明的第二个目的涉及一种用于制造所述UV-可见光检测器的方法。 它包括将至少一个p-n结与用于感测UV光的光学装置组装的步骤。 还公开了所述紫外可见检测器作为火焰检测器的用途。

公开(公告)号：WO2018130530A1

公开(公告)日：2018-07-19

申请号：PCT/EP2018/050479

申请日：2018-01-09

Applicant: LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST)

Inventor： LETURCQ, Renaud

IPC: G02B5/08 ,  G02B5/28 ,  G02B5/20

Abstract: The invention is directed to an infrared reflective and electrically conductive composite film (4) to coat on a substrate (6), said composite film (4) comprising at least one infrared reflective layer (8). The composite film further comprises at least one metal layer (10) of connected metal nanowires, each of said at least one infrared reflective layer (8) and at least one metal layer (10) being conformably covered by an optically transparent conductive layer (12).

公开(公告)号：WO2018115369A1

公开(公告)日：2018-06-28

申请号：PCT/EP2017/084244

申请日：2017-12-21

Applicant: LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST)

Inventor： LETURCQ, Renaud ,  ADJEROUD, Noureddine ,  WACK, Sabrina

IPC: C23C16/455 ,  C23C16/40

Abstract: The invention is directed to a method for forming aluminium oxide on a substrate, said method comprising providing the substrate into a reaction chamber and performing at least one atomic layer deposition cycle, each cycle comprising the sequential steps (6;8) of exposing the substrate to a trimethylaluminium precursor into the reaction chamber and exposing the substrate to an oxidant into the reaction chamber. The method further comprises a step (4) of exposing the substrate to a diethylzinc precursor before or simultaneously to the step (6) or at least one of the steps (6) of exposing the substrate to the trimethylaluminum precursor.

公开(公告)号：WO2018060237A1

公开(公告)日：2018-04-05

申请号：PCT/EP2017/074479

申请日：2017-09-27

Applicant: LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST)

Inventor： CREPELLIERE, Jonathan ,  BAHLAWANE, Naoufal ,  LENOBLE, Damien ,  LETURCQ, Renaud

IPC: C23C16/40 ,  H01L21/285 ,  H01L29/786

CPC classification number: C23C16/407 ,  C23C16/408

Abstract: The first object of the invention is directed to a three-layer architecture p-n junction comprising a substrate as first layer, a second layer of p-oxide material coated on said substrate, and a third layer of n-oxide material coated on said second layer; wherein said third layer of n-oxide material comprises ZnO. Said p-n junction is remarkable in that said second layer of p-oxide material consists of CuCrO2 wherein the Cr/Cu ratio within said layer is >1. The second object of the invention is a method for forming the p-n junction as defined in the first object using the steps of coating the substrate with CuCrO2 by MOCVD and of coating said layer with ZnO by ALD. The third object of the invention concerns the use of said p-n junction as a diode in a photodiode array of the detection unit of a UV detector.

Abstract translation: 本发明的第一个目的涉及三层结构pn结，其包括作为第一层的衬底，涂覆在所述衬底上的第二p-氧化物材料层以及第三层n 涂覆在所述第二层上的氧化物材料; 其中所述第三n-氧化物材料层包含ZnO。 所述p-n结的显着之处在于所述第二层p氧化物材料由CuCrO 2组成，其中所述层内的Cr / Cu比率> 1。 本发明的第二个目的是一种形成如第一个目的中定义的p-n结的方法，该方法使用通过MOCVD用CuCrO 2涂覆衬底和用ALD涂覆ZnO的步骤。 本发明的第三个目的涉及将所述p-n结用作UV检测器的检测单元的光电二极管阵列中的二极管。