公开(公告)号：WO2015031461A1

公开(公告)日：2015-03-05

申请号：PCT/US2014/052880

申请日：2014-08-27

Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

Inventor： DRESSELHAUS, Mildred ,  KONG, Jing ,  LEE, Yi-Hsien ,  LING, Xi

IPC: C30B25/18

CPC classification number: C23C16/305 ,  C23C14/12 ,  C23C14/24 ,  C23C16/01 ,  C23C16/0272 ,  C23C16/4488 ,  Y10T428/30 ,  Y10T428/31678 ,  Y10T428/31938

Abstract: A metal dichalcogenide layer is produced on a transfer substrate by seeding F 16 CuPc molecules on a surface of a growth substrate, growing a layer {e.g., a monolayer) of a metal dichalcogenide via chemical vapor deposition on the growth substrate surface seeded with F 16 CuPc molecules, and contacting the F 16 CuPc- molecule and metal-dichalcogenide coated growth substrate with a composition that releases the metal dichalcogenide from the growth substrate.

Abstract translation: 通过在生长衬底的表面上接种F16CuPc分子，通过化学气相沉积在F16CuPc分子接种的生长衬底表面上生长金属二硫属元素化物层（例如，单层）来生产金属二硫属元素化物质层，以及 使F16CuPc分子和金属 - 二硫属元素化物包被的生长衬底与从生长衬底释放金属二硫属元素的组合物接触。

公开(公告)号：WO2014134524A1

公开(公告)日：2014-09-04

申请号：PCT/US2014/019575

申请日：2014-02-28

Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

Inventor： KONG, Jing ,  LI, Lain-Jong ,  LEE, Yi-Hsien

IPC: C23C16/00 ,  C25D13/02

CPC classification number: C30B25/186 ,  B23B9/00 ,  C01B32/20 ,  C23C16/00 ,  C30B29/46 ,  H01L23/58

Abstract: Aromatic molecules are seeded on a surface of a growth substrate; and a layer {e.g., a monolayer) of a metal dichalcogenide is grown via chemical vapor deposition on the growth substrate surface seeded with aromatic molecules. The seeded aromatic molecules are contacted with a solvent that releases the metal dichalcogenide layer from the growth substrate. The metal dichalcogenide layer can be released with an adhered transfer medium and can be deposited on a target substrate.

Abstract translation: 芳族分子接种在生长底物的表面上; 并且通过化学气相沉积在用芳族分子接种的生长衬底表面上生长金属二硫属元素的层（例如，单层）。 接种的芳族分子与从生长基质释放金属二硫属化物层的溶剂接触。 可以用粘附的转印介质释放金属二硫属元素层，并且可以沉积在目标基底上。