公开(公告)号：WO1997005622A1

公开(公告)日：1997-02-13

申请号：PCT/US1996011770

申请日：1996-07-17

Applicant: MICRON QUANTUM DEVICES, INC.

Inventor： MICRON QUANTUM DEVICES, INC. ,  ROOHPARVAR, Frankie, F. ,  RINERSON, Darrell, D. ,  CHEVALLIER, Christophe, J. ,  BRINER, Michael, S.

IPC: G11C11/34

CPC classification number: G11C16/12 ,  G11C5/04 ,  G11C7/1045 ,  G11C16/04 ,  G11C16/20 ,  G11C29/02 ,  G11C29/021 ,  G11C29/028 ,  G11C29/46 ,  G11C2029/4402

Abstract: A memory system (10) capable of being configured for optimum performance after fabrication using control parameters stored in non-volatile data storage units (12A). The system includes an array of memory cells (12) separate from the data storage units (12A), arranged in a multiplicity of rows and columns, with each cell located in one of the rows being coupled to a common word line and with each cell located in one of the columns being coupled to a common bit line. Control circuitry (19) for controlling memory operations such as programming the memory cells and reading the memory cells when the memory system is in a normal mode of operation. The non-volatile data storage units (12A) store control parameter data used by the control means for controlling the memory operations, with the control parameters being modifiable when the memory system is placed in an alternative mode of operation as opposed the normal mode of operation. Once the memory has been fabricated and characterized, the control parameters can be selected for optimum memory performance and loaded into the data storage units.

Abstract translation: 一种存储系统（10），其能够被配置为在使用存储在非易失性数据存储单元（12A）中的控制参数进行制造之后的最佳性能。 该系统包括与数据存储单元（12A）分离的存储单元（12）的阵列，排列成多个行和列，每个单元位于一行中，其中一个行耦合到公共字线，并且与每个单元 位于一列中的一个被耦合到公共位线。 用于控制存储器操作的控制电路（19），例如当存储器系统处于正常操作模式时对存储器单元进行编程和读取存储器单元。 非挥发性数据存储单元（12A）存储由控制装置使用的用于控制存储器操作的控制参数数据，当存储器系统处于替代操作模式时，控制参数是可修改的，而不是正常操作模式 。 一旦存储器被制造和表征，可以选择控制参数以获得最佳的存储器性能并加载到数据存储单元中。