公开(公告)号：WO2015088320A1

公开(公告)日：2015-06-18

申请号：PCT/MY2014/000170

申请日：2014-06-10

Applicant: MIMOS BERHAD

Inventor： WITJAKSONO, Gunawan ,  ZAMAN, A. S. M. Mukter Uz ,  ABDUL RAZAK, Nurul Huda

IPC: H01L31/0236 ,  H01L31/0747

CPC classification number: H01L31/18

Abstract: A process of treating a silicon substrate surface for optimizing sunlight capture in the fabrication of solar cells is disclosed. Each of the two sides of the silicon substrate is textured with a laser source to roughen its surface by fabricating nanoscale structures thereon. Surface texturing may be conducted on both sides of a crystalline silicon wafer by flipping over to repeat our process on the other side such that sunhght reflectivity is minimized and photon trapping is maximized. The process may be conducted in room temperature and vacuum in a dry-etch processing environment. The substrate may undergo translation in the X- Y axes for control of the substrate's movement to achieve the requisite texturing by the laser beam of a pulse laser of Nd-YAG source in 533 nm and 1024 nm wavelengths at > 75 joules/pulse with translation speed of

Abstract translation: 公开了一种在制造太阳能电池中处理硅衬底表面以优化阳光捕获的方法。 通过在其上制造纳米尺度结构，用激光源对硅衬底的两侧进行纹理化以使其表面粗糙化。 表面纹理可以在晶体硅晶片的两面上翻转，在另一侧重复我们的工艺，使得sunhght反射率最小化并且光子俘获被最大化。 该方法可以在干蚀刻加工环境中在室温和真空下进行。 衬底可以在X-Y轴上进行平移以控制衬底的运动，以通过Nd-YAG源的脉冲激光束在533nm和1024nm波长的激光束以> 75焦耳/脉冲达到必要的纹理，并且具有平移 速度<0.5mm /秒。 我们的工艺适用于包括异质结构，特别是具有本征薄层（HIT）结构，特别是在晶体硅（c-Si）（p型））衬底上的太阳能电池，其可以包括暴露于纳秒级到毫微微 干式薄膜太阳能电池晶圆上的第二范围脉冲激光。