DISTRIBUTED AMPLIFIER WITH TRANSISTORS HAVING NEGATIVE FEEDBACK
    1.
    发明申请
    DISTRIBUTED AMPLIFIER WITH TRANSISTORS HAVING NEGATIVE FEEDBACK 审中-公开
    具有负反馈的晶体管的分布式放大器

    公开(公告)号:WO2002084863A2

    公开(公告)日:2002-10-24

    申请号:PCT/US2002/005270

    申请日:2002-02-20

    CPC classification number: H03F3/607

    Abstract: A distributed amplifier (40) is provided that comprises an input transmission line (48) and an output transmission line (50). The distributed amplifier (40) also comprises a first distributed amplifier cell (42) and second distributed amplifier cell (44) connected to the input transmission line (48) and the output transmission line (50). The first distributed amplifier cell (42) and second distributed amplifier cell (44) has a first transistor (52) and a second transistor (54) in a first cascode configuration between the input transmission line (48) and the output transmission line (50) and the first transistor (52) is configured with a first feedback loop (78) and the second transistor (54) is configured with a second feedback loop (80).

    Abstract translation: 提供一种包括输入传输线(48)和输出传输线(50)的分布式放大器(40)。 分布式放大器(40)还包括连接到输入传输线(48)和输出传输线(50)的第一分布式放大器单元(42)和第二分布式放大器单元(44)。 第一分布式放大器单元(42)和第二分布放大器单元(44)在输入传输线(48)和输出传输线(50)之间具有第一共源共栅配置的第一晶体管(52)和第二晶体管(54) ),并且第一晶体管(52)配置有第一反馈环路(78),并且第二晶体管(54)配置有第二反馈环路(80)。

    "> DISTRIBUTED AMPLIFIER TAPERED CONSTANT
    2.
    发明申请
    DISTRIBUTED AMPLIFIER TAPERED CONSTANT "R" NETWORK 审中-公开
    分布式放大器TAPERED恒定“R”网络

    公开(公告)号:WO2003107472A1

    公开(公告)日:2003-12-24

    申请号:PCT/US2003/017464

    申请日:2003-06-03

    CPC classification number: H01P9/00

    Abstract: A constant "R" network distributed amplifier formed in a multi-layer, low temperature co-fired ceramic structure (50) comprises multiple cascaded constant "R" networks (46) for amplifying a signal applied thereto. A transmission line (16,18,20) is formed on the top surfaces of each of a plurality of ceramic layers (52, 54, 56) having a beginning end and a distal end and has a generally rectangular shape. The distal end of the transmission line formed on a lower ceramic layer is connected to the beginning end (58,60) of the transmission line formed on the next adjacent upper ceramic layer by way of vias formed in the ceramic layers through which metal conductive material is formed there through. The transmission lines and the capacitance established between the individual layers form a LC structure. An output is provided at the middle portion of the transmission line formed on the middle ceramic layer that is coupled to the drain of a FET.

    Abstract translation: 形成在多层低温共烧陶瓷结构(50)中的恒定“R”网络分布式放大器包括用于放大施加到其上的信号的多个级联常数“R”网络(46)。 传输线(16,18,20)形成在具有起始端和远端的多个陶瓷层(52,54,56)中的每一个的顶表面上,并且具有大致矩形形状。 形成在下陶瓷层上的传输线的远端通过形成在陶瓷层中的通孔连接到形成在下一相邻上陶瓷层上的传输线的起始端(58,60),金属导电材料 在那里形成。 传输线和在各个层之间建立的电容形成LC结构。 在形成在与FET的漏极耦合的中间陶瓷层上的传输线的中间部分处提供输出。

    DISTRIBUTED AMPLIFIER WITH TRANSISTORS HAVING NEGATIVE FEEDBACK

    公开(公告)号:WO2002084863A3

    公开(公告)日:2002-10-24

    申请号:PCT/US2002/005270

    申请日:2002-02-20

    Abstract: A distributed amplifier (40) is provided that comprises an input transmission line (48) and an output transmission line (50). The distributed amplifier (40) also comprises a first distributed amplifier cell (42) and second distributed amplifier cell (44) connected to the input transmission line (48) and the output transmission line (50). The first distributed amplifier cell (42) and second distributed amplifier cell (44) has a first transistor (52) and a second transistor (54) in a first cascode configuration between the input transmission line (48) and the output transmission line (50) and the first transistor (52) is configured with a first feedback loop (78) and the second transistor (54) is configured with a second feedback loop (80).

    DISTRIBUTED AMPLIFIER HAVING SEPARATELY BIASED SECTIONS

    公开(公告)号:WO2002075921A3

    公开(公告)日:2002-09-26

    申请号:PCT/US2002/005269

    申请日:2002-02-20

    Abstract: A distributed amplifier (40) comprising an input transmission line (48), an output transmission line (50) and N amplifier sections (42,44,46), and N biasing sources (82) configured to provide N independent biasing voltages for each transistor (52) of the N amplifier sections (42,44,46) for active operation as such that when a first independent biasing voltage of a first transistor is modified the first transistor is configured for a non-active operation and an output power of the distributed amplifier (40) is reduced without a substantial degradation in an efficiency of the distributed amplifier (40).

    HYBRID STRUCTURE FOR DISTRIBUTED POWER AMPLIFIERS
    5.
    发明申请
    HYBRID STRUCTURE FOR DISTRIBUTED POWER AMPLIFIERS 审中-公开
    分布式功率放大器的混合结构

    公开(公告)号:WO2004013960A1

    公开(公告)日:2004-02-12

    申请号:PCT/US2003/022571

    申请日:2003-07-18

    CPC classification number: H03F3/607 H01L2924/0002 H03F2200/541 H01L2924/00

    Abstract: A hybrid low voltage distributed power amplifier structure (300) provides improved efficiency by forming drain transmission line inductors (323) on a substrate (306) while the rest of the amplifier is built in IC form (302). A wirebond interconnection (330) is made between the IC s drainline capacitors (324) and the substrate s drainline inductors (323) which are a higher impedance point in the circuit. As a result, the wirebond inductance becomes negligible and has little or no impact on the power amplifier's performance.

    Abstract translation: 混合低压分布式功率放大器结构(300)通过在衬底(306)上形成漏极传输线电感(323)而放大器的其余部分内置于IC形式(302)中来提供改进的效率。 在IC的漏极电容器(324)和衬底的漏极线圈电感(323)之间形成引线键合(330),该电路是电路中较高的阻抗点。 因此,引线键合电感可以忽略不计,对功率放大器的性能影响很小或没有影响。

    SWITCH ASSEMBLY AND METHOD OF FORMING THE SAME
    6.
    发明申请
    SWITCH ASSEMBLY AND METHOD OF FORMING THE SAME 审中-公开
    开关组件及其形成方法

    公开(公告)号:WO2002075762A1

    公开(公告)日:2002-09-26

    申请号:PCT/US2002/005275

    申请日:2002-02-20

    CPC classification number: H01H1/0036 H01H19/00

    Abstract: A microelectromechanical system (MEMS) switch assembly (10) and a method of forming the MEMBS switch assembly (10) is provided that includes a switching member (12) having a first portion (34) that is at least partially formed with a first material having a first dielectric constant and a second portion (36) that is at least partially formed with a second material having a second dielectric constant. Furthermore, the switching member (12) further includes a first lead (14) spaced apart from a second lead (16) for contacting the switching member (12). In operation, the switching member (12) is configured for movement such that the first portion (34) and second portion (36) of the switching member (12) can provide variable electrical connections between the first lead (14) and second lead (16).

    Abstract translation: 提供了一种微机电系统(MEMS)开关组件(10)和形成MEMBS开关组件(10)的方法,其包括具有第一部分(34)的开关构件(12),该第一部分至少部分地形成有第一材料 具有第一介电常数和第二部分(36),其至少部分地由具有第二介电常数的第二材料形成。 此外,切换构件(12)还包括与用于接触切换构件(12)的第二引线(16)间隔开的第一引线(14)。 在操作中,切换构件(12)构造成使得切换构件(12)的第一部分(34)和第二部分(36)能够在第一引线(14)和第二引线(14)之间提供可变的电连接 16)。

Patent Agency Ranking