Abstract:
A distributed amplifier (40) is provided that comprises an input transmission line (48) and an output transmission line (50). The distributed amplifier (40) also comprises a first distributed amplifier cell (42) and second distributed amplifier cell (44) connected to the input transmission line (48) and the output transmission line (50). The first distributed amplifier cell (42) and second distributed amplifier cell (44) has a first transistor (52) and a second transistor (54) in a first cascode configuration between the input transmission line (48) and the output transmission line (50) and the first transistor (52) is configured with a first feedback loop (78) and the second transistor (54) is configured with a second feedback loop (80).
Abstract:
A constant "R" network distributed amplifier formed in a multi-layer, low temperature co-fired ceramic structure (50) comprises multiple cascaded constant "R" networks (46) for amplifying a signal applied thereto. A transmission line (16,18,20) is formed on the top surfaces of each of a plurality of ceramic layers (52, 54, 56) having a beginning end and a distal end and has a generally rectangular shape. The distal end of the transmission line formed on a lower ceramic layer is connected to the beginning end (58,60) of the transmission line formed on the next adjacent upper ceramic layer by way of vias formed in the ceramic layers through which metal conductive material is formed there through. The transmission lines and the capacitance established between the individual layers form a LC structure. An output is provided at the middle portion of the transmission line formed on the middle ceramic layer that is coupled to the drain of a FET.
Abstract:
A distributed amplifier (40) is provided that comprises an input transmission line (48) and an output transmission line (50). The distributed amplifier (40) also comprises a first distributed amplifier cell (42) and second distributed amplifier cell (44) connected to the input transmission line (48) and the output transmission line (50). The first distributed amplifier cell (42) and second distributed amplifier cell (44) has a first transistor (52) and a second transistor (54) in a first cascode configuration between the input transmission line (48) and the output transmission line (50) and the first transistor (52) is configured with a first feedback loop (78) and the second transistor (54) is configured with a second feedback loop (80).
Abstract:
A distributed amplifier (40) comprising an input transmission line (48), an output transmission line (50) and N amplifier sections (42,44,46), and N biasing sources (82) configured to provide N independent biasing voltages for each transistor (52) of the N amplifier sections (42,44,46) for active operation as such that when a first independent biasing voltage of a first transistor is modified the first transistor is configured for a non-active operation and an output power of the distributed amplifier (40) is reduced without a substantial degradation in an efficiency of the distributed amplifier (40).
Abstract:
A hybrid low voltage distributed power amplifier structure (300) provides improved efficiency by forming drain transmission line inductors (323) on a substrate (306) while the rest of the amplifier is built in IC form (302). A wirebond interconnection (330) is made between the IC s drainline capacitors (324) and the substrate s drainline inductors (323) which are a higher impedance point in the circuit. As a result, the wirebond inductance becomes negligible and has little or no impact on the power amplifier's performance.
Abstract:
A microelectromechanical system (MEMS) switch assembly (10) and a method of forming the MEMBS switch assembly (10) is provided that includes a switching member (12) having a first portion (34) that is at least partially formed with a first material having a first dielectric constant and a second portion (36) that is at least partially formed with a second material having a second dielectric constant. Furthermore, the switching member (12) further includes a first lead (14) spaced apart from a second lead (16) for contacting the switching member (12). In operation, the switching member (12) is configured for movement such that the first portion (34) and second portion (36) of the switching member (12) can provide variable electrical connections between the first lead (14) and second lead (16).