Abstract:
The application disloses methods of fabricating three-dimensional (3D) graphene crystalline foam, based on mixing a carbon source with a skelet (scaffold) powder. In one embodiment heat and pressure are used to compact the carbon and a metal powder into a close packed structure. In another embodiment a 3D crystalline graphene foam is fabricated with a large surface area (550m 2 /g) from a 3D metal foam, depositing a layer of graphene using chemical vapour deposition (CVD), depositing a polymer support and removing the metal via wet chemical etching, such that the graphene retains the configuration, and then finally removing the polymer. A method of fabricating the metal foam framework and coating the metal with graphene are also disclosed.
Abstract:
In accordance with an embodiment of the invention, there is provided a graphene ferroelectric device. The device comprises a graphene transistor channel and a ferroelectric gate of the graphene transistor channel, the ferroelectric gate comprising a linear polarization at a first applied gate voltage less than a threshold voltage, and a hysteretic polarization at a second applied gate voltage greater than the threshold voltage. The device may be configured to undergo optical switching of the graphene transistor channel between a high resistance state and a low resistance state in response to photoillumination of the device.
Abstract:
The invention relates to layered graphene-ferroelectric structures for use as transparent electrodes in touch panels and display screen applications.
Abstract:
The invention relates to three-dimensional crystalline foams with high surface areas, high lithium capacity, and high conductivity for use as electrode materials and methods for their fabrication. In additional embodiments, the invention also relates to the use of three-dimensional crystalline foams as supercapacitors for improved charge and energy storage.
Abstract:
A photovoltaic cell (10) is disclosed that includes an active layer (20) sandwiched by top and bottom graphene-ferroelectric electrodes (30T, 30B) each having a graphene layer (32) and a polarized ferroelectric layer (34). The polarized ferroelectric layer defines an internal electric field (EI). Light (50) irradiates the active layer through the top graphene-ferroelectric electrode, causing the generation in the active layer of electrons (e) and holes (h) as charge carriers. The internal electric field causes the electrons and holes to move towards opposite electrodes, giving rise to a photocurrent (ipc), while also mitigating undesirable charge-carrier recombination.