公开(公告)号：WO2014154699A1

公开(公告)日：2014-10-02

申请号：PCT/EP2014/055976

申请日：2014-03-25

Applicant: NOVALED GMBH ,  TECHNISCHE UNIVERSITÄT DRESDEN

Inventor： KLEEMANN, Hans ,  ZAKHIDOV, Alexander ,  LÜSSEM, Björn ,  LEO, Karl

IPC: H01L51/00 ,  H01L51/10

CPC classification number: H01L51/0018 ,  H01L51/0015 ,  H01L51/0016 ,  H01L51/0023 ,  H01L51/0512 ,  H01L51/102 ,  H01L51/44 ,  H01L51/56 ,  Y02E10/549 ,  Y02P70/521

Abstract: The present disclosure relates to a method of manufacturing an organic electronic device, comprising providing a layered device structure, the layered device structure comprising a plurality of electrodes and an electronically active region being provided in electrical contact with at least one of the plurality of electrodes, said providing of the layered device structure comprising steps of providing an organic semiconducting layer,applying a structuring layer to the organic semiconducting layer, the structuring layer having a first region and a second region, the first region being covered by a layer material,applying a contact improving layer to the structuring layer by depositing at least one of an organic dopant material and an organic dopant-matrix material at least in the first region,depositing a layer material on the contact improving layer at least in the first region, and removing the structuring layer at least in the second region. Furthermore, an organic electronic device is provided.

Abstract translation: 本公开涉及一种制造有机电子器件的方法，包括提供分层器件结构，所述分层器件结构包括多个电极和与所述多个电极中的至少一个电接触地设置的电子有源区， 所述提供层状器件结构包括以下步骤：提供有机半导体层，将结构层施加到有机半导体层，所述结构层具有第一区域和第二区域，所述第一区域被层材料覆盖， 至少在所述第一区域中沉积有机掺杂剂材料和有机掺杂剂 - 基体材料中的至少一种，至少在所述第一区域中将所述接触改善层沉积到所述接触改善层上， 至少在第二区域中构造层。 此外，提供了一种有机电子装置。

公开(公告)号：WO2015144865A1

公开(公告)日：2015-10-01

申请号：PCT/EP2015/056674

申请日：2015-03-27

Applicant: NOVALED GMBH

Inventor： KLEEMANN, Hans ,  BLOCHWITZ-NIMOTH, Jan ,  SCHWARTZ, Gregor

IPC: H01L51/05

CPC classification number: H01L51/057 ,  H01L51/0003 ,  H01L51/0023 ,  H01L51/0541 ,  H01L51/105

Abstract: The invention refers to a method for producing an organic transistor, the method comprising steps of providing a first electrode (2) on a substrate (1), generating a source-drain insulator (3) assigned at least partially to the substrate (1) and/or at least partially to the first electrode (2), generating a second electrode (4) assigned to the source-drain insulator (3), depositing an organic semiconducting layer (5) on the first electrode (2), the second electrode (4), and the source-drain insulator (3), generating a gate insulator (6) assigned to the organic semiconducting layer (5), and providing a gate electrode (7) assigned to the gate insulator (6). Further, the invention relates to an organic transistor.

Abstract translation: 本发明涉及一种制造有机晶体管的方法，该方法包括以下步骤：在衬底（1）上提供第一电极（2），产生至少部分地分配给衬底（1）的源极 - 漏极绝缘体（3） 和/或至少部分地耦合到第一电极（2），产生分配给源极 - 漏极绝缘体（3）的第二电极（4），在第一电极（2）上沉积有机半导体层（5） 电极（4）和源极 - 漏极绝缘体（3），产生分配给有机半导体层（5）的栅极绝缘体（6），以及提供分配给栅极绝缘体（6）的栅电极（7）。 此外，本发明涉及有机晶体管。

公开(公告)号：WO2014173738A1

公开(公告)日：2014-10-30

申请号：PCT/EP2014/057651

申请日：2014-04-15

Applicant: NOVALED GMBH ,  TECHNISCHE UNIVERSITÄT DRESDEN

Inventor： KLEEMANN, Hans ,  LÜSSEM, Björn ,  LEO, Karl ,  GÜNTHER, Alrun

IPC: H01L51/05 ,  H01L51/10 ,  H01L51/52

CPC classification number: H01L51/057 ,  H01L51/0018 ,  H01L51/002 ,  H01L51/105 ,  H01L51/5296

Abstract: The present disclosure relates to a method for producing an organic field effect transistor, the method comprising steps of providing a gate electrode (1) and a gate insulator (2) assigned to the gate electrode (1) for electrical insulation on a substrate, depositing a first organic semiconducting layer (3) on the gate insulator (2), generating a first electrode (4) and an electrode insulator (5) assigned to the first electrode (4) for electrical insulation, depositing a second organic semiconducting layer (6) on the first organic semiconducting layer (3) and the electrode insulator (5), and generating a second electrode (7), wherein the method further com- prises at least one of the following steps generating a first doping material layer (13) on the first organic semiconducting layer (3) prior to generating the first electrode (4) and the electrode insulator (5) such that the first electrode (4) with the electrode insulator (5) are generated at least partially on the first doping material layer (13), and generating a second doping material layer (14) on the second organic semiconducting layer (6) prior to generating the second electrode (7) such that the second electrode (7) is generated at least partially on the second doping material layer (14). Furthermore, an organic field effect transistor is provided.

Abstract translation: 本公开涉及一种用于制造有机场效应晶体管的方法，所述方法包括以下步骤：提供分配给栅电极（1）的栅电极（1）和栅极绝缘体（2），用于在基板上进行电绝缘，沉积 在所述栅极绝缘体（2）上的第一有机半导体层（3），产生分配给所述第一电极（4）以用于电绝缘的第一电极（4）和电极绝缘体（5），沉积第二有机半导体层 ）在所述第一有机半导体层（3）和所述电极绝缘体（5）上，并且产生第二电极（7），其中所述方法还包括产生第一掺杂材料层（13）的至少一个以下步骤， 在第一有机半导体层（3）之前，在产生第一电极（4）和电极绝缘体（5）之前，使得具有电极绝缘体（5）的第一电极（4）至少部分地在第一掺杂垫上产生 并且在产生所述第二电极（7）之前在所述第二有机半导体层（6）上产生第二掺杂材料层（14），使得所述第二电极（7）至少部分地在所述第二有机半导体层 掺杂材料层（14）。 此外，提供有机场效应晶体管。