公开(公告)号：WO2016160720A1

公开(公告)日：2016-10-06

申请号：PCT/US2016/024552

申请日：2016-03-28

Applicant: OHIO STATE INNOVATION FOUNDATION

Inventor： RAJAN, Siddharth ,  KRISHNAMOORTHY, Sriram ,  ZHANG, Yuewei

IPC: H01L33/06 ,  H01L29/08

CPC classification number: H01L33/06 ,  B82Y10/00 ,  H01L29/0676 ,  H01L29/08 ,  H01L33/0016 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/325 ,  H01L33/46

Abstract: An example ultraviolet (UV) light emitting diode (LED) is described herein. The UV LED can include an n-doped contact region, an active region configured to emit UV light that is arranged between an n-doped region and a p-doped region, and a tunnel junction. The tunnel junction is arranged between the n-doped contact region and the p-doped region. In addition, the tunnel junction can include a heavily p-doped region, a degenerately n-doped region, and a semiconductor region arranged between the heavily p-doped region and the degenerately n-doped region. Each of the heavily p-doped region and the degenerately n-doped region has a gradually varied material energy bandgap to reduce respective depletion barriers within the heavily p-doped region and the degenerately n-doped region.

Abstract translation: 本文描述了示例性紫外（UV）发光二极管（LED）。 UV LED可以包括n掺杂接触区域，被配置为发射布置在n掺杂区域和p掺杂区域之间的UV光的有源区域和隧道结。 隧道结布置在n掺杂接触区域和p掺杂区域之间。 此外，隧道结可以包括重p掺杂区域，简并n掺杂区域和布置在重p掺杂区域和简并n掺杂区域之间的半导体区域。 每个重掺杂区域和简并n掺杂区域都具有逐渐变化的材料能带隙，以减少重p掺杂区域和简并n掺杂区域内的各自的耗尽势垒。