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    TRANSISTOR LASER OPTICAL SWITCHING AND MEMORY TECHNIQUES AND DEVICES
    2.
    发明申请
    TRANSISTOR LASER OPTICAL SWITCHING AND MEMORY TECHNIQUES AND DEVICES 审中-公开
    晶体管激光器光学开关和存储器技术和器件

    公开(公告)号：WO2014089355A1

    公开(公告)日：2014-06-12

    申请号：PCT/US2013/073414

    申请日：2013-12-05

    Applicant: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS

    Inventor： FENG, Milton ,  HOLONYAK, Nick ,  WU, Mong-Kai

    IPC: H01L33/04

    CPC classification number: H01S5/06203 ,  B82Y20/00 ,  H01L33/0016 ,  H01L33/105 ,  H01S5/1071

    Abstract: A ring cavity light-emitting transistor device, including: a planar semiconductor structure of a semiconductor base layer of a first conductivity type between semiconductor collector and emitter layers of a second conductivity type; base, collector, and emitter metalizations respectively coupled with the base layer, said collector layer, and said emitter layer, the base metalization including at least one annular ring coupled with a surface of the base layer; and an annular ring- shaped optical resonator in a region of the semiconductor structure generally including the interface of the base and emitter regions; whereby application of electrical signals with respect to the base, collector, and emitter metalizations causes light emission in the base layer that propagates in the ring-shaped optical resonator cavity.

    Abstract translation: 一种环腔发光晶体管器件，包括：半导体集电器和第二导电类型的发射极层之间的第一导电类型的半导体基底层的平面半导体结构; 基极，集电极和发射极金属化，其分别与基极层，所述集电极层和所述发射极层耦合，所述基极金属化包括与所述基极层的表面耦合的至少一个环形环; 以及在所述半导体结构的通常包括所述基极和发射极区域的界面的区域中的环形环形光学谐振器; 由此相对于基极，集电极和发射极金属化施加电信号导致在环形光谐振腔中传播的基极层中的光发射。

    DUAL MODE TILTED-CHARGE DEVICES AND METHODS
    3.
    发明申请
    DUAL MODE TILTED-CHARGE DEVICES AND METHODS 审中-公开
    双模式倾斜充电装置和方法

    公开(公告)号：WO2014022724A1

    公开(公告)日：2014-02-06

    申请号：PCT/US2013/053319

    申请日：2013-08-01

    Applicant: QUANTUM ELECTRO OPTO SYSTEMS SDN. BHD. ,  WALTER, Gabriel

    Inventor： WALTER, Gabriel

    IPC: H01L27/14 ,  H01L27/30

    CPC classification number: H01L33/002 ,  B82Y10/00 ,  H01L29/0817 ,  H01L29/1004 ,  H01L29/122 ,  H01L29/205 ,  H01L29/7371 ,  H01L33/0016 ,  H01L33/04 ,  H01L33/06

    Abstract: A method for providing and operating a device in a first mode as a light- emitting transistor and in a second mode as a high speed electrical transistor, including the following steps: providing a semiconductor base region of a first conductivity type between semiconductor emitter and collector regions of a second semiconductor type; providing, in the base region, a quantum size region; providing, in the base region between the quantum size region and the collector region, a carrier transition region; applying a controllable bias voltage with respect to the base and collector regions to control depletion of carriers in at least the carrier transition region; and applying signals with respect to the emitter, base, and collector regions to operate the device as either a light-emitting transistor or a high speed electrical transistor, depending on the controlled bias signal.

    Abstract translation: 一种用于以第一模式提供和操作作为发光晶体管并在第二模式中作为高速电晶体管的装置的方法，包括以下步骤：在半导体发射极和集电极之间提供第一导电类型的半导体基极区域 第二半导体类型的区域; 在碱性区域中提供量子尺寸区域; 在量子尺寸区域和集电极区域之间的基极区域中提供载流子过渡区域; 对所述基极集电极区域和所述集电极区域施加可控偏置电压以控制至少所述载流子过渡区域中载流子的耗尽; 并且相对于发射极，基极和集电极区域施加信号，以根据受控的偏置信号将器件操作为发光晶体管或高速电晶体管。

    MULTI-JUNCTION OPTOELECTRONIC DEVICE WITH GROUP IV SEMICONDUCTOR AS A BOTTOM JUNCTION
    5.
    发明申请
    MULTI-JUNCTION OPTOELECTRONIC DEVICE WITH GROUP IV SEMICONDUCTOR AS A BOTTOM JUNCTION 审中-公开
    第IV族半导体作为底部结的多结光电子器件

    公开(公告)号：WO2017132534A1

    公开(公告)日：2017-08-03

    申请号：PCT/US2017/015387

    申请日：2017-01-27

    Applicant: ALTA DEVICES, INC.

    Inventor： KAYES, Brendan M. ,  HE, Gang

    IPC: H01L31/18 ,  H01L31/0725 ,  H01L31/0687 ,  H01L33/00

    CPC classification number: H01L31/1892 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/184 ,  H01L33/0016 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/30 ,  H01L33/34 ,  H01L33/44 ,  H01L33/46 ,  Y02E10/544

    Abstract: A multi-junction optoelectronic device (200) and method of manufacture are disclosed. The method comprises providing a first p-n structure (208) on a substrate (212), wherein the first p-n structure comprises a first base layer of a first semiconductor with a first bandgap such that a lattice constant of the first semiconductor matches a lattice constant of the substrate, and wherein the first semiconductor comprises a Group III-V semiconductor. The method includes providing a second p-n structure (206), wherein the second p-n structure comprises a second base layer of a second semiconductor with a second bandgap, wherein a lattice constant of the second semiconductor matches a lattice constant of the first semiconductor, and wherein the second semiconductor comprises a Group IV semiconductor. The method also includes lifting off the substrate the multi-junction optoelectronic device having the first p-n structure and the second p-n structure, wherein the multi-junction optoelectronic device is a flexible device.

    Abstract translation: 公开了一种多结光电子器件（200）及其制造方法。 该方法包括在衬底（212）上提供第一pn结构（208），其中第一pn结构包括具有第一带隙的第一半导体的第一基底层，使得第一半导体的晶格常数与晶格常数 衬底，并且其中第一半导体包括III-V族半导体。 该方法包括提供第二pn结构（206），其中第二pn结构包括具有第二带隙的第二半导体的第二基底层，其中第二半导体的晶格常数与第一半导体的晶格常数匹配，并且其中 第二半导体包括IV族半导体。 该方法还包括提升具有第一p-n结构和第二pn结构的多结光电子器件的衬底，其中多结光电子器件是柔性器件。

    ULTRAVIOLET LIGHT EMITTING DIODES WITH TUNNEL JUNCTION
    6.
    发明申请
    ULTRAVIOLET LIGHT EMITTING DIODES WITH TUNNEL JUNCTION 审中-公开
    ULTRAVIOLET发光二极管与隧道接头

    公开(公告)号：WO2016160720A1

    公开(公告)日：2016-10-06

    申请号：PCT/US2016/024552

    申请日：2016-03-28

    Applicant: OHIO STATE INNOVATION FOUNDATION

    Inventor： RAJAN, Siddharth ,  KRISHNAMOORTHY, Sriram ,  ZHANG, Yuewei

    IPC: H01L33/06 ,  H01L29/08

    CPC classification number: H01L33/06 ,  B82Y10/00 ,  H01L29/0676 ,  H01L29/08 ,  H01L33/0016 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/325 ,  H01L33/46

    Abstract: An example ultraviolet (UV) light emitting diode (LED) is described herein. The UV LED can include an n-doped contact region, an active region configured to emit UV light that is arranged between an n-doped region and a p-doped region, and a tunnel junction. The tunnel junction is arranged between the n-doped contact region and the p-doped region. In addition, the tunnel junction can include a heavily p-doped region, a degenerately n-doped region, and a semiconductor region arranged between the heavily p-doped region and the degenerately n-doped region. Each of the heavily p-doped region and the degenerately n-doped region has a gradually varied material energy bandgap to reduce respective depletion barriers within the heavily p-doped region and the degenerately n-doped region.

    Abstract translation: 本文描述了示例性紫外（UV）发光二极管（LED）。 UV LED可以包括n掺杂接触区域，被配置为发射布置在n掺杂区域和p掺杂区域之间的UV光的有源区域和隧道结。 隧道结布置在n掺杂接触区域和p掺杂区域之间。 此外，隧道结可以包括重p掺杂区域，简并n掺杂区域和布置在重p掺杂区域和简并n掺杂区域之间的半导体区域。 每个重掺杂区域和简并n掺杂区域都具有逐渐变化的材料能带隙，以减少重p掺杂区域和简并n掺杂区域内的各自的耗尽势垒。

    SEMICONDUCTOR LIGHT EMITTING DEVICE UTILISING PUNCH-THROUGH EFFECTS
    7.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE UTILISING PUNCH-THROUGH EFFECTS 审中-公开
    半导体发光器件利用穿孔效应

    公开(公告)号：WO2009093177A1

    公开(公告)日：2009-07-30

    申请号：PCT/IB2009/050209

    申请日：2009-01-21

    Applicant: INSIAVA (PTY) LIMITED ,  DU PLESSIS, Monuko ,  SNYMAN, Lukas Willem

    Inventor： DU PLESSIS, Monuko ,  SNYMAN, Lukas Willem

    IPC: H01L33/00

    CPC classification number: H01L33/0016 ,  H01L33/34

    Abstract: A light emitting device (10) comprises a body (12) of a semiconductor material. A first junction region (14) is formed in the body between a first region (12.1 ) of the body of a first doping kind and a second region (12.2) of the body of a second doping kind. A second junction region (16) is formed in the body between the second region (12.2) of the body and a third region (12.3) of the body of the first doping kind. A terminal arrangement (18) is connected to the body for, in use, reverse biasing the first junction region (14) into a breakdown mode and for forward biasing at least part (16.1) of the second junction region (16), to inject carriers towards the first junction region (14). The device (10) is configured so that a first depletion region (20) associated with the reverse biased first junction region (14) punches through to a second depletion region associated with the forward biased second junction region (16).

    Abstract translation: 发光器件（10）包括半导体材料的主体（12）。 第一接合区域（14）在第一掺杂类型的主体的第一区域（12.1）和第二掺杂类型的主体的第二区域（12.2）之间的主体中形成。 在本体的第二区域（12.2）和第一掺杂类型的主体的第三区域（12.3）之间的主体中形成第二接合区域（16）。 端子装置（18）连接到主体，用于在使用时将第一接合区域（14）反向偏置成击穿模式并且用于向第二接合区域（16）的至少一部分（16.1）进行偏置，以便将其注入 载体朝向第一接合区域（14）。 器件（10）被配置为使得与反向偏置的第一接合区域（14）相关联的第一耗尽区域（20）穿过与正向偏置的第二接合区域（16）相关联的第二耗尽区域。

    SILICON LIGHT EMITTING DEVICE WITH CARRIER INJECTION
    8.
    发明申请
    SILICON LIGHT EMITTING DEVICE WITH CARRIER INJECTION 审中-公开
    具有载体注射的硅光发射装置

    公开(公告)号：WO2009047716A1

    公开(公告)日：2009-04-16

    申请号：PCT/IB2008/054122

    申请日：2008-10-08

    Applicant: INSIAVA (PTY) LIMITED ,  DU PLESSIS, Monuko

    Inventor： DU PLESSIS, Monuko

    IPC: H01L33/00 ,  H01L27/15

    CPC classification number: H01L33/34 ,  H01L27/15 ,  H01L33/0008 ,  H01L33/0016 ,  H01L33/54

    Abstract: A light emitting device (10) comprises a first body (12) of an indirect bandgap semiconductor material. A first junction region (18) in the body is formed between a first region (12.1 ) of the body of a first doping kind and a second region (12.2) of the body of a second doping kind. A second junction (20) region in the body is formed between the second region of the body and a third region of the body of the first doping kind. The first and second junction regions being spaced from one another by not further than a minority carrier diffusion length. A terminal arrangement is connected to the first, second and third regions of the body for, in use, reverse biasing the first junction region into avalanche or field emission mode and for forward biasing the second junction region to inject carriers into the first junction region. A second body (22) of an isolation material is located immediately adjacent at least one wall of the third region, thereby to reduce parasitic injection from the third region.

    Abstract translation: 发光器件（10）包括间接带隙半导体材料的第一本体（12）。 主体中的第一接合区域（18）形成在第一掺杂类型的主体的第一区域（12.1）和第二掺杂类型的主体的第二区域（12.2）之间。 主体的第二结区（20）区域形成在主体的第二区域和第一掺杂类型的主体的第三区域之间。 第一和第二结区彼此间隔不超过少数载流子扩散长度。 端子装置连接到主体的第一，第二和第三区域，用于在使用时将第一接合区域反向偏置成雪崩或场致发射模式，并且用于向前偏置第二接合区域以将载流子注入第一接合区域。 隔离材料的第二主体（22）紧邻第三区域的至少一个壁，从而减少从第三区域的寄生注入。

    SURFACE LIGHT-EMITTING ELEMENT AND SELF-SCANNING TYPE LIGHT-EMITTING DEVICE
    9.
    发明申请
    SURFACE LIGHT-EMITTING ELEMENT AND SELF-SCANNING TYPE LIGHT-EMITTING DEVICE 审中-公开
    表面发光元件和自扫描型发光器件

    公开(公告)号：WO1997012405A1

    公开(公告)日：1997-04-03

    申请号：PCT/JP1996002744

    申请日：1996-09-24

    Applicant: NIPPON SHEET GLASS CO., LTD. ,  KUSUDA, Yukihisa ,  OHNO, Seiji ,  OHTSUKA, Shunsuke

    Inventor： NIPPON SHEET GLASS CO., LTD.

    IPC: H01L33/00

    CPC classification number: B41J2/45 ,  B41J2/451 ,  B41J2002/453 ,  H01L27/153 ,  H01L33/0016 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L33/385 ,  Y10S257/918

    Abstract: A surface light-emitting element having improved external light emission efficiency and a self-scanning light-emitting device using this surface light-emitting element are provided. To improve external light-emission efficiency, the light-emitting center is shifted to an area where there is no light shielding layer thereon. To achieve this, an insulating layer (47) is provided on the electrode portion above which there is a light-shielding layer at a portion making contact with the semiconductor layer thereunder so as to prevent the injected current from flowing from that electrode portion. To increase the amount of light emission, the peripheral length of the electrode is increased. With an electrode of the same area, the larger the peripheral length, the larger becomes the amount of light emission because the current injected from the electrode is distributed evenly over the entire surface, causing light to emit evenly. When the surface light-emitting element is a surface light-emitting thyristor of the PNPN structure, it is necessary to have such a construction that part of the injected current is prevented from flowing toward the gate electrode (41) to improve external light emission efficiency. The self-scanning light-emitting device of this invention is accomplished by using this type of surface light-emitting element.

    Abstract translation: 提供了具有改善的外部发光效率的表面发光元件和使用该表面发光元件的自扫描型发光装置。 为了提高外部发光效率，发光中心转移到其上没有遮光层的区域。 为了实现这一点，在电极部分上设置绝缘层（47），在绝缘层（47）之上，在与其下面的半导体层接触的部分处具有遮光层，以防止注入的电流从该电极部分流出。 为了增加发光量，电极的周长增加。 对于具有相同面积的电极，周长越长，由于从电极注入的电流均匀地分布在整个表面上，导致光均匀发射，所以发光量越大。 当表面发光元件是PNPN结构的表面发光晶闸管时，需要具有这样的结构，即防止部分注入电流流向栅电极（41），以提高外部发光效率 。 本发明的自扫描型发光装置通过使用这种类型的表面发光元件来实现。

    MONOLITHIC MULTI-COLOR LIGHT EMISSION/DETECTION DEVICE
    10.
    发明申请
    MONOLITHIC MULTI-COLOR LIGHT EMISSION/DETECTION DEVICE 审中-公开
    单色多色光发射/检测装置

    公开(公告)号：WO1994006156A1

    公开(公告)日：1994-03-17

    申请号：PCT/US1993008310

    申请日：1993-09-02

    Applicant: MIDWEST RESEARCH INSTITUTE ,  WANLASS, Mark, W.

    Inventor： MIDWEST RESEARCH INSTITUTE

    IPC: H01L27/14

    CPC classification number: H01L31/0687 ,  H01L33/0016 ,  Y02E10/544

    Abstract: A single-crystal, monolithic, tandem, multicolor optical transceiver device (100) is described, including (a) an InP substrate (102) having upper and lower surfaces, (b) a first junction (104) on the upper surface of the InP substrate, (c) a second junction (106) on the first junction. The first junction is preferably GaInAsP of defined composition, and the second junction is preferably InP. The two junctions are lattice matched. The second junction has a larger energy band gap than the first junction. Additional junctions (108) having successively larger energy band gaps may be included. The device is capable of simultaneous and distinct multicolor emission and detection over a single optical fiber.

    Abstract translation: 描述了单晶，单片，串联，多色光收发器装置（100），其包括（a）具有上表面和下表面的InP衬底（102），（b）在所述第一结（104）的上表面上 InP衬底，（c）第一结上的第二结（106）。 第一结优选为具有限定组成的GaInAsP，第二结优选为InP。 两个结点是格子匹配的。 第二接头具有比第一接头更大的能带隙。 可以包括具有连续较大能带隙的附加结（108）。 该器件能够通过单根光纤同时且独特的多色发射和检测。

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