A MAGNETO-RESISTIVE MAGNETIC FIELD SENSOR
    1.
    发明申请
    A MAGNETO-RESISTIVE MAGNETIC FIELD SENSOR 审中-公开
    磁阻电磁场传感器

    公开(公告)号:WO9747982A3

    公开(公告)日:1998-02-19

    申请号:PCT/IB9700566

    申请日:1997-05-16

    CPC classification number: G01R33/09

    Abstract: A magneto-resistive magnetic field sensor comprising two magnetic layers (1, 2) which are mutually interconnected via a constriction (7). In a particular embodiment, the magnetic layers (1, 2) are separated by an intermediate non-metallic layer (3) containing a hole (5) which is filled with magnetic material so as to form the constriction (7). In an alternative embodiment, the magnetic layers (1, 2) and the constriction (7) are substantially coplanar (fig. 8). In a preferential embodiment, the width (wc) of the constriction (7) is smaller than one micron, and is ideally of the order of 100 nm. By measuring the electrical resistance across the constriction, i.e. with a current-flow from one magnetic layer (1) to the other magnetic layer (2) via the constriction (7), the relative role of inter-domain resistance effects with respect to intra-domain resistance effects is increased, leading to a correspondingly increased magneto-resistance ratio. In addition, because the electrical properties of the sensor then derive principally from the constriction (7), whereas its magnetic properties derive primarily from the magnetic layers (1, 2), it is possible to independently adjust the electrical and magnetic characteristics of the sensor, at least to a large degree.

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