公开(公告)号：WO2013121195A1

公开(公告)日：2013-08-22

申请号：PCT/GB2013/050337

申请日：2013-02-13

Applicant: PRAGMATIC PRINTING LTD

Inventor： GREGORY, John James ,  PRICE, Richard David

IPC: H01L29/66 ,  H01L27/12

CPC classification number: H01L29/66477 ,  G03F7/2022 ,  H01L27/1266 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/66969

Abstract: A method of manufacturing an electronic device comprising a first terminal (e.g. a source terminal), a second terminal (e.g. a drain terminal), a semiconductor channel connecting the first and second terminals and a gate terminal to which a potential may be applied to control a conductivity of the channel. The method comprises a first exposure of a photoresist from above the substrate using a mask and a second exposure from below the substrate, wherein in the second exposure the first and second terminals shield a part of the photoresist from exposure. An intermediate step reduces the solubility of the photoresist exposed in the first exposure. A window is formed in the photoresist at the location which was shielded by the mask, but exposed to radiation from below. Semiconductor material, dielectric material and conductor material are deposited inside the window to form a semiconductor channel, gate dielectric, and a gate terminal, respectively.

Abstract translation: 一种制造电子器件的方法，包括第一端子（例如源极端子），第二端子（例如漏极端子），连接第一和第二端子的半导体沟道和可以施加电位的栅极端子以控制 通道的电导率。 该方法包括使用掩模从衬底上方首先曝光光致抗蚀剂，并从衬底下方第二曝光，其中在第二曝光中，第一和第二端子屏蔽光刻胶的一部分不被曝光。 中间步骤降低了在第一次曝光中暴露的光致抗蚀剂的溶解度。 在被掩模遮蔽的位置处的光致抗蚀剂中形成窗口，但是暴露于下方的辐射。 半导体材料，电介质材料和导体材料沉积在窗口内，分别形成半导体沟道，栅极电介质和栅极端子。