GIANT SPIN HALL EFFECT MAGNETIC TUNNEL JUNCTION LOGIC GATE, RELATED SYSTEMS AND METHODS
    1.
    发明申请
    GIANT SPIN HALL EFFECT MAGNETIC TUNNEL JUNCTION LOGIC GATE, RELATED SYSTEMS AND METHODS 审中-公开
    大旋转霍尔效应磁性隧道结逻辑门,相关系统和方法

    公开(公告)号:WO2015081301A1

    公开(公告)日:2015-06-04

    申请号:PCT/US2014/067772

    申请日:2014-11-26

    Abstract: Aspects described herein are related to spintronic logic gates employing a Giant Spin Hall Effect (GSHE) magnetic tunnel junction (MTJ) element(s) for performing logical operations. In one aspect, a spintronic logic gate is disclosed that includes a charge current generation circuit and a GSHE MTJ element. The charge current generation circuit is configured to generate a charge current representing an input bit set. The input bit set may include one or more input bit states for a logical operation. The GSHE MTJ element is configured to set a logical output bit state for the logical operation, and has a threshold current level. The GSHE MTJ element is configured to generate a GSHE spin current in response to the charge current and perform the logical operation on the input bit set by setting the logical output bit state based on whether the GSHE spin current exceeds the threshold current level.

    Abstract translation: 本文描述的方面涉及采用用于执行逻辑操作的巨型旋转霍尔效应(GSHE)磁性隧道结(MTJ)元件的自旋电子逻辑门。 一方面,公开了一种包括充电电流产生电路和GSHE MTJ元件的自旋电子逻辑门。 充电电流产生电路被配置为产生表示输入位组的充电电流。 输入位集可以包括用于逻辑运算的一个或多个输入位状态。 GSHE MTJ元件配置为逻辑运算的逻辑输出位状态,并具有阈值电流电平。 GSHE MTJ元件被配置为响应于充电电流产生GSHE自旋电流,并且基于GSHE自旋电流是否超过阈值电流电平来设置逻辑输出位状态来对所设置的输入位执行逻辑运算。

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