公开(公告)号：WO2016022998A3

公开(公告)日：2016-04-14

申请号：PCT/US2015044360

申请日：2015-08-07

Applicant: QUANTUM SI INC

Inventor： ROTHBERG JONATHAN M ,  FIFE KEITH G ,  BOISVERT DAVID

IPC: G01N21/64 ,  G01S17/89

CPC classification number: G01N21/6428 ,  C12Q1/6869 ,  G01N21/6408 ,  G01N21/645 ,  G01N21/6458 ,  G01N2021/6439 ,  G01N2021/6441 ,  G01N2201/06113 ,  G01N2201/0697 ,  G01S7/4863 ,  G01S7/4865 ,  H01L27/14603 ,  H01L27/14687 ,  H01L27/14812

Abstract: An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit also includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers into the at least one charge carrier storage region based upon times at which the charge carriers are produced.

Abstract translation: 集成电路包括配置成接收入射光子的光电探测区域。 光检测区域被配置成响应于入射光子而产生多个电荷载流子。 该集成电路还包括至少一个电荷载流子存储区域。 该集成电路还包括电荷载流子分离结构，该电荷载流子分离结构被配置为基于产生电荷载流子的时间选择性地将多个电荷载流子的电荷载流子导入至少一个电荷载流子存储区域。