公开(公告)号：WO2015026489A1

公开(公告)日：2015-02-26

申请号：PCT/US2014/048476

申请日：2014-07-28

Applicant: SANDISK TECHNOLOGIES INC.

Inventor： YADAV, Preeti ,  SARANA, Barys ,  BHALERAO, Abhijeet ,  FERNANDEZ, Frederick Cayabyab ,  JOSHI, Namita Vishwas

IPC: G11C16/10 ,  G11C29/50 ,  G11C11/56 ,  G06F13/42

CPC classification number: G06F12/0246 ,  G06F13/4234 ,  G11C11/5628 ,  G11C16/102 ,  G11C29/50012

Abstract: A nonvolatile memory die is tested to determine certain parameters such as read time, which are then recorded in the nonvolatile memory die. After the die is incorporated into a memory system, and firmware is downloaded, the nonvolatile memory system uses the recorded parameters to determine how to configure the memory system for operation within specified limits, such as determining how much delay to apply to read operations.

Abstract translation: 测试非易失性存储器管芯以确定诸如读取时间的某些参数，然后将其记录在非易失性存储器管芯中。 在将芯片并入存储器系统中并且下载固件之后，非易失性存储器系统使用所记录的参数来确定如何将存储器系统配置为在指定限制内​​操作，诸如确定应用于读取操作的延迟。