公开(公告)号：WO2022140756A1

公开(公告)日：2022-06-30

申请号：PCT/US2021/073024

申请日：2021-12-20

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： ROIG-GUITART, Jaume ,  ALLERSTAM, Fredrik ,  NEYER, Thomas ,  KONSTANTINOV, Andrei ,  DOMEIJ, Martin ,  LIM, Jangkwon

IPC: H01L29/06

Abstract: In a general aspect, a semiconductor device (100, 400, 700, 900) can include a substrate (110, 410, 710, 910) of a first conductivity type, an active region (120, 420, 720, 920) disposed in the substrate, and a termination region (T) disposed in the substrate adjacent to the active region. The termination region can include a junction termination extension (130, 420, 730, 930) of a second conductivity type, where the second conductivity type is opposite the first conductivity type. The junction termination extension can have a first depletion stopper region (132, 432, 732, 932) disposed in an upper portion of the junction termination extension, a second depletion stopper region (134, 434, 734, 934) disposed in a lower portion of the junction termination extension, and a high carrier mobility region (136, 436, 736, 936) disposed between the first depletion stopper region and the second depletion stopper region.

公开(公告)号：WO2022192830A1

公开(公告)日：2022-09-15

申请号：PCT/US2022/070659

申请日：2022-02-15

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： NEYER, Thomas ,  DE VLEESCHOUWER, Herbert ,  ALLERSTAM, Fredrik

IPC: H01L29/739 ,  H01L29/78 ,  H01L29/423

Abstract: In a general aspect, a semiconductor device can (100) include a plurality of vertical transistor segments (200, 300) disposed in an active region (110) of a semiconductor region. The plurality of vertical transistor segments can include respective gate electrodes (206b, 306b). A first dielectric (415, 915, 1015) can be disposed on the active region. An electrically conductive grid (130, 230, 330, 430, 630, 930, 1030) can be disposed on the first dielectric. The electrically conductive grid can be electrically coupled with the respective gate electrodes using a plurality of conductive contacts (430a, 630a, 930a, 1030a) formed through the first dielectric. A second dielectric (925) can be disposed on the electrically conductive grid and the first dielectric. A conductive metal layer can be disposed on the second dielectric layer. The conductive metal layer can include a portion (951) that is electrically coupled with the respective gate electrodes through the electrically conductive grid using at least one conductive contact (930a) to the electrically conductive grid formed through the second dielectric.