公开(公告)号：WO2020167384A1

公开(公告)日：2020-08-20

申请号：PCT/US2019/068946

申请日：2019-12-30

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： KONSTANTINOV, Andrei

IPC: H01L29/872 ,  H01L21/329 ,  H01L29/06 ,  H01L29/16 ,  H01L29/36 ,  H01L29/04

Abstract: SiC Schottky rectifiers with surge current ruggedness are described that may be configured to provide multiple types of surge current protection. Different current magnitudes and characteristics may be associated with the different types of surge current events. The described Schottky rectifier structures provide surge current protection in multiple types of surge current scenarios, while minimizing or reducing situations in which solution techniques in one context undesirably mitigate effects of solution techniques in another context.

公开(公告)号：WO2022140756A1

公开(公告)日：2022-06-30

申请号：PCT/US2021/073024

申请日：2021-12-20

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： ROIG-GUITART, Jaume ,  ALLERSTAM, Fredrik ,  NEYER, Thomas ,  KONSTANTINOV, Andrei ,  DOMEIJ, Martin ,  LIM, Jangkwon

IPC: H01L29/06

Abstract: In a general aspect, a semiconductor device (100, 400, 700, 900) can include a substrate (110, 410, 710, 910) of a first conductivity type, an active region (120, 420, 720, 920) disposed in the substrate, and a termination region (T) disposed in the substrate adjacent to the active region. The termination region can include a junction termination extension (130, 420, 730, 930) of a second conductivity type, where the second conductivity type is opposite the first conductivity type. The junction termination extension can have a first depletion stopper region (132, 432, 732, 932) disposed in an upper portion of the junction termination extension, a second depletion stopper region (134, 434, 734, 934) disposed in a lower portion of the junction termination extension, and a high carrier mobility region (136, 436, 736, 936) disposed between the first depletion stopper region and the second depletion stopper region.