公开(公告)号：WO2022140756A1

公开(公告)日：2022-06-30

申请号：PCT/US2021/073024

申请日：2021-12-20

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： ROIG-GUITART, Jaume ,  ALLERSTAM, Fredrik ,  NEYER, Thomas ,  KONSTANTINOV, Andrei ,  DOMEIJ, Martin ,  LIM, Jangkwon

IPC: H01L29/06

Abstract: In a general aspect, a semiconductor device (100, 400, 700, 900) can include a substrate (110, 410, 710, 910) of a first conductivity type, an active region (120, 420, 720, 920) disposed in the substrate, and a termination region (T) disposed in the substrate adjacent to the active region. The termination region can include a junction termination extension (130, 420, 730, 930) of a second conductivity type, where the second conductivity type is opposite the first conductivity type. The junction termination extension can have a first depletion stopper region (132, 432, 732, 932) disposed in an upper portion of the junction termination extension, a second depletion stopper region (134, 434, 734, 934) disposed in a lower portion of the junction termination extension, and a high carrier mobility region (136, 436, 736, 936) disposed between the first depletion stopper region and the second depletion stopper region.