公开(公告)号：WO2022122877A1

公开(公告)日：2022-06-16

申请号：PCT/EP2021/084917

申请日：2021-12-09

Applicant: SGL CARBON SE [DE]/[DE]

Inventor： WIJAYAWARDHANA, Charles ,  MILITZER, Christian ,  HUANG, Jing-Jia ,  FORSBERG, Urban ,  PEDERSEN, Henrik

IPC: C23C16/32 ,  C30B28/14

Abstract: The present disclosure relates to a novel CVD method for preparing a layer comprising refractory carbide crystals, layers obtainable by said method and their various uses and applications.

公开(公告)号：WO2022029251A1

公开(公告)日：2022-02-10

申请号：PCT/EP2021/071918

申请日：2021-08-05

Applicant: SGL CARBON SE

Inventor： MILITZER, Christian ,  WIJAYAWARDHANA, Charles ,  FORSBERG, Urban ,  PEDERSEN, Henrik

IPC: C23C16/32 ,  C04B41/50 ,  C01B32/21 ,  C01B32/914 ,  C01B32/956 ,  C01B32/963 ,  C04B41/009 ,  C04B41/526 ,  C04B41/89 ,  C23C16/325

Abstract: The invention relates to a refractory carbide multilayer (10) comprising a first layer (11), a second layer (12) and a third layer (13), wherein the first layer (11) has an average thickness of at least 25 nm and contains at least one refractory carbide, the second layer (12) has an average thickness of at least 25 nm and contains at least one refractory carbide, the third layer (13) has an average thickness of at least 25 nm and contains at least one refractory carbide, and the first layer (11) has a larger mean linear intercept section grain size than the second layer (12).