公开(公告)号：WO2004009517A3

公开(公告)日：2004-08-26

申请号：PCT/US0322445

申请日：2003-07-18

Applicant: SHAMROCK TECH INC ,  CODY CHARLES A ,  CAREY PAUL ,  AWAD YOUSSEF ,  NEUBERG WILLIAM

Inventor： CODY CHARLES A ,  CAREY PAUL ,  AWAD YOUSSEF ,  NEUBERG WILLIAM

IPC: A61K47/48 ,  B01F17/00 ,  B32B17/06 ,  C04B14/04 ,  C07B20060101 ,  C08K3/34 ,  C08K9/04 ,  C08L101/00 ,  C09B67/02 ,  C09B69/02 ,  C09B69/04 ,  C09C1/28 ,  C09C1/42 ,  C09C3/08

CPC classification number: C09C1/42 ,  C09C3/08

Abstract: The present invention generally provides a method for increasing the dispersibility of an anionic molecule of interest by (A) reacting the anionic molecule A of interest onto the surface of a cationically modified substrate ([S S W ]Q Q ) having a high surface area. The present invention further provides for the resulting compositions whereby an anionic molecule of interest has been incorporated onto the surface of a cationically modified high surface area substrate and where the resulting anion/cationically modified substrate composition (such as an anion/organoclay composition) experiences greater dispersibility in a target application system than the anionic molecule of interest alone experiences in that same application system. The method of the present invention further serves to substantially reduce the water solubility of the anionic molecule of interest by incorporating it into a cationically modified high surface area substrate such as an organoclay.

Abstract translation: 本发明通常提供一种通过（A）将感兴趣的阴离子分子A反应到阳离子改性底物的表面上（[S - > W] - ）来提高阴离子分子的分散性的方法， ] Q +），具有高的表面积。 本发明进一步提供了所得组合物，其中将目的阴离子分子掺入到阳离子改性的高表面积底物的表面上，并且其中得到的阴离子/阳离子改性底物组合物（例如阴离子/有机粘土组合物）经历更大的 在目标应用系统中的分散性比单独感兴趣的阴离子分子在相同的应用系统中经历。 本发明的方法还用于通过将阴离子分子掺入阳离子改性的高表面积底物例如有机粘土中，大大降低目标阴离子分子的水溶性。

公开(公告)号：WO2004067608A3

公开(公告)日：2004-12-09

申请号：PCT/US2004002209

申请日：2004-01-26

Applicant: SHAMROCK TECH INC ,  CODY CHARLES A ,  NEUBERG WILLIAM ,  SUI MANSHI ,  AWAD YOUSSEF ,  CAREY PAUL

Inventor： CODY CHARLES A ,  NEUBERG WILLIAM ,  SUI MANSHI ,  AWAD YOUSSEF ,  CAREY PAUL

IPC: B29D22/00 ,  C08J20060101

CPC classification number: C08F6/20 ,  C08F6/14 ,  C08F14/26 ,  C08F214/26 ,  Y10T428/2982 ,  C08L27/18 ,  C08F2/04

Abstract: A method for treating polytetrafluoroethylene (PTFE) in its reactor latex form to produce a dry submicron PTFE powder that remains stable without rheology modifiers, surfactants, wetting agents, pH adjusters or other stabilizing additives. Reactor latex PTFE formed during an emulsion polymerization process can be irradiated, with an electron beam or gamma rays, during or after the polymerization to form a product where the dry submicron PTFE powder is free-flowing, tends not to self-agglomerate and tends not to dust into the air upon handling so that the PTFE is readily dispersible when placed in a desired application system or medium.

Abstract translation: 一种处理其反应器胶乳形式的聚四氟乙烯（PTFE）的方法，以生产在没有流变改性剂，表面活性剂，润湿剂，pH调节剂或其它稳定添加剂的情况下保持稳定的干亚微米PTFE粉末。 在乳液聚合过程中形成的反应器胶乳PTFE可以在聚合期间或之后用电子束或γ射线照射以形成其中干燥的亚微米PTFE粉末自由流动的产物，倾向于不会自聚集并趋向于不 在处理时将空气吹入空气中，以便当置于所需的应用系统或介质中时PTFE易于分散。

公开(公告)号：WO2004009019A3

公开(公告)日：2004-08-26

申请号：PCT/US0322446

申请日：2003-07-18

Applicant: SHAMROCK TECH INC ,  CODY CHARLES A ,  CAREY PAUL ,  AWAD YOUSSEF

Inventor： CODY CHARLES A ,  CAREY PAUL ,  AWAD YOUSSEF

IPC: A61K47/48 ,  A61K9/14 ,  B01F17/00 ,  B01J13/00 ,  C08K5/00 ,  C08K9/04 ,  C08L101/00 ,  C09B67/00 ,  C09B67/46 ,  C09C1/28 ,  C09C1/42 ,  C09C3/08 ,  B01D17/00 ,  C04B14/04 ,  C08K3/34

CPC classification number: C09B67/0098 ,  B01F17/0042 ,  B01F17/0057 ,  B01F17/0064 ,  B01J13/0034 ,  B01J13/0047 ,  C09B67/0085 ,  C09B67/0092

Abstract: The present invention generally provides a method for increasing the dispersibility of an anionic molecule of interest by (A) reacting the cationic molecue C+ of interest onto the surface of a cationically modified substrate ([Q Q ]) having a high surface area. The present invention further provides for the resulting compositions whereby a cationic molecule of interest has been incorporated onto the surface of cationically modified high surface area substrate and where the resulting cation/ cationically modified substrate composition (such as a cation/organoclay composition) experiences greater dispersibility in a target application system than the anionic molecule of interest alone experiences in that same application system. The method of the present invention further serves to substantially reduce the water solubility of the cationic molecule of interest by incorporating it into a cationically modified high surface area substrate such as an organoclay.

Abstract translation: 本发明通常提供通过以下方法提高阴离子分子的分散性的方法：（A）将感兴趣的阳离子分子C +与阳离子改性的底物（[Q + Q +]）的表面反应， 高表面积 本发明进一步提供所得到的组合物，其中将目的阳离子分子掺入到阳离子改性的高表面积底物的表面上，其中得到的阳离子/阳离子改性底物组合物（如阳离子/有机粘土组合物）经历更大的分散性 在目标应用系统中，不仅仅是感兴趣的阴离子分子在相同的应用系统中经历。 本发明的方法还用于将阳离子分子的水溶性通过将其并入阳离子改性的高表面积底物如有机粘土中而大大降低其水溶性。

公开(公告)号：WO2007103643B1

公开(公告)日：2008-06-26

申请号：PCT/US2007062672

申请日：2007-02-23

Applicant: APPLIED MATERIALS INC ,  MAYUR ABHILASH ,  YAM MARK ,  BALAKRISHNA AJIT ,  CAREY PAUL ,  JENNINGS DEAN ,  MOFFATT STEPHEN ,  SCHAFFER WILLIAM ,  LERNER ALEXANDER N ,  THOMAS TIMOTHY N ,  HUNTER AARON MUIR

Inventor： MAYUR ABHILASH ,  YAM MARK ,  BALAKRISHNA AJIT ,  CAREY PAUL ,  JENNINGS DEAN ,  MOFFATT STEPHEN ,  SCHAFFER WILLIAM ,  LERNER ALEXANDER N ,  THOMAS TIMOTHY N ,  HUNTER AARON MUIR

IPC: H01L21/76

CPC classification number: H01L21/823418 ,  H01L21/823425 ,  H01L21/823475

Abstract: The present invention generally describes one ore more apparatuses and various methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps, more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

Abstract translation: 本发明总体上描述了用于在衬底的期望区域上执行退火工艺的一种或多种设备和各种方法。 在一个实施方案中，一定量的能量被传递至基材表面以优先熔化基材的某些所需区域以去除由之前的处理步骤产生的不希望的损伤，更均匀地将掺杂剂分布在基材的各个区域中，和/或活化 衬底的各个区域。 由于掺杂剂原子在衬底的熔化区域中的扩散速率和溶解度增加，所以优先熔化过程将允许掺杂剂在熔化区域中更均匀的分布。 因此，熔化区域的产生允许：1）掺杂剂原子更均匀地重新分布，2）在先前的工艺步骤中产生的待去除的缺陷，以及3）将形成具有超突变掺杂剂浓度的区域。

公开(公告)号：WO2007103643A3

公开(公告)日：2008-05-08

申请号：PCT/US2007062672

申请日：2007-02-23

Applicant: APPLIED MATERIALS INC ,  MAYUR ABHILASH ,  YAM MARK ,  BALAKRISHNA AJIT ,  CAREY PAUL ,  JENNINGS DEAN ,  MOFFATT STEPHEN ,  SCHAFFER WILLIAM ,  LERNER ALEXANDER N ,  THOMAS TIMOTHY N ,  HUNTER AARON MUIR

Inventor： MAYUR ABHILASH ,  YAM MARK ,  BALAKRISHNA AJIT ,  CAREY PAUL ,  JENNINGS DEAN ,  MOFFATT STEPHEN ,  SCHAFFER WILLIAM ,  LERNER ALEXANDER N ,  THOMAS TIMOTHY N ,  HUNTER AARON MUIR

IPC: H01L21/76

CPC classification number: H01L21/823418 ,  H01L21/823425 ,  H01L21/823475

Abstract: The present invention generally describes one ore more apparatuses and various methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps, more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

Abstract translation: 本发明通常描述了一种更多的装置和各种方法，用于对基底的期望区域进行退火处理。 在一个实施例中，一定量的能量被传送到衬底的表面以优先地熔化衬底的某些所需区域以去除由先前的处理步骤产生的不需要的损伤，更均匀地分布衬底的各个区域中的掺杂剂和/或激活 衬底的各个区域。 由于掺杂剂原子在衬底的熔融区域中的扩散速率和溶解度增加，优选熔融过程将允许掺杂剂在熔融区域中更均匀地分布。 熔化区域的产生因此允许：1）掺杂剂原子更均匀地重新分布，2）在先前的待处理步骤中产生的缺陷，以及3）具有要突变的掺杂剂浓度的区域。