公开(公告)号：WO2017110968A1

公开(公告)日：2017-06-29

申请号：PCT/JP2016/088286

申请日：2016-12-22

Applicant: SHARP KABUSHIKI KAISHA

Inventor： AFENTAKIS, Themistokles

IPC: G01D21/02 ,  G01K7/01 ,  G01L5/00 ,  A61B5/00 ,  A61B5/01

CPC classification number: A61B5/447 ,  A61B5/6892 ,  A61B2560/0252 ,  A61B2562/0247 ,  A61B2562/0261 ,  A61B2562/029 ,  A61B2562/046 ,  G01D1/00 ,  G01D5/1655 ,  G01K7/16 ,  G01K7/226 ,  G01N27/045 ,  G01N27/048

Abstract: A method is provided for making multiple environmental measurements using a single sensing element. Each sensing element (sensel) includes a thin-film transistor (TFT) and a passive element. Typically, a plurality of sensels is provided arranged into an array. In response to an electrical stimulus, an electrical measurement is supplied that is responsive to a change in TFT electrical characteristic correlated to a first environmental condition, as well as a change in a characteristic of the passive element correlated to a second environmental condition. When the sensels are formed in an array, a plurality of electrical measurements is supplied corresponding plurality of locations on a monitored surface. Some exemplary environmental conditions include temperature, pressure, moisture, chemicals, oxygen, solution pH, salinity, and shear. The method determines the first environmental condition independent of the second environmental condition, while determining the second environmental condition independent of the first environmental condition.

Abstract translation: 提供了一种使用单个感测元件进行多个环境测量的方法。 每个传感元件（sensel）包括一个薄膜晶体管（TFT）和一个无源元件。 典型地，提供排列成阵列的多个传感器。 响应于电刺激，提供电测量，该电测量响应于与第一环境条件相关的TFT电特性的变化以及与第二环境条件相关的无源元件的特性的变化。 当传感器形成阵列时，在监测表面上的多个位置上提供多个电测量值。 一些示例性环境条件包括温度，压力，湿度，化学品，氧气，溶液pH，盐度和剪切。 该方法确定独立于第二环境条件的第一环境条件，同时确定独立于第一环境条件的第二环境条件。

公开(公告)号：WO2014185023A1

公开(公告)日：2014-11-20

申请号：PCT/JP2014/002338

申请日：2014-04-25

Applicant: SHARP KABUSHIKI KAISHA

Inventor： NISHIMURA, Karen ,  STECKER, Lisa ,  AFENTAKIS, Themistokles ,  ULMER, Kurt

IPC: H01L21/336 ,  H01L21/312 ,  H01L29/786 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40

CPC classification number: H01L51/0545 ,  H01L27/3258 ,  H01L27/3274 ,  H01L51/0018 ,  H01L51/0541 ,  H01L51/107

Abstract: A method is provided for forming an epoxy-based planarization layer overlying an organic semiconductor (OSC) film. Generally, the method forms a fluoropolymer passivation layer overlying the OSC layer. A photopatternable adhesion layer is formed overlying the fluoropolymer passivation layer, and patterned. A photopatternable planarization layer, comprising an epoxy-based organic resin, is formed overlying the photopatternable adhesion layer and patterned to expose the fluoropolymer passivation layer. Then, the fluoropolymer passivation layer is plasma etched to expose the OSC layer. More explicitly, the method can be used to fabricate a bottom gate or top gate organic thin-film transistor (OTFT). Top gate and bottom gate OTFT devices are also provided.

Abstract translation: 提供了一种用于形成覆盖有机半导体（OSC）膜的环氧系平面化层的方法。 通常，该方法形成覆盖OSC层的氟聚合物钝化层。 形成覆盖氟聚合物钝化层的图案化图案的光致图案粘接层。 形成包含环氧基有机树脂的光图案化平坦化层，覆盖在光图案化粘合层上，并图案化以暴露含氟聚合物钝化层。 然后，对氟聚合物钝化层进行等离子体蚀刻以暴露OSC层。 更明确地说，该方法可用于制造底栅或顶栅有机薄膜晶体管（OTFT）。 还提供顶栅和底栅OTFT器件。

公开(公告)号：WO2014108960A1

公开(公告)日：2014-07-17

申请号：PCT/JP2013/007356

申请日：2013-12-13

Applicant: SHARP KABUSHIKI KAISHA

Inventor： SCHUELE, Paul J. ,  AFENTAKIS, Themistokles ,  HARTZELL, John W.

IPC: G06F3/043 ,  G06F3/041

CPC classification number: G06F3/044 ,  G06F3/0412 ,  G06F3/043

Abstract: A video display is provided with a planar piezoelectric transmitter to transmit ultrasound signals, and a display panel including a plurality of pixels. Each pixel has a data interface to accept a video signal with a variable voltage associated with a range of light intensity values, and to supply a touch signal with a variable voltage derived from a range of reflected ultrasound signal energies. Each pixel is made up of a light device to supply light with an intensity responsive to the video signal voltage, and a storage capacitor to maintain a video signal voltage between refresh cycles. A piezoelectric transducer accepts a reflected ultrasound signal energy and maintains a touch signal voltage between refresh cycles. In one aspect, the storage capacitor and the piezoelectric transducer are the same device. The light device may be a liquid crystal (LC) layer or a light emitting diode.

Abstract translation: 视频显示器设置有用于传输超声信号的平面压电发射器，以及包括多个像素的显示面板。 每个像素具有接收具有与一定范围的光强度值相关联的可变电压的视频信号的数据接口，并且提供具有从反射的超声信号能量的范围导出的可变电压的触摸信号。 每个像素由光装置组成，以响应于视频信号电压的光强提供光;以及存储电容器，用于在刷新周期之间维持视频信号电压。 压电传感器接受反射的超声信号能量并在刷新周期之间保持触摸信号电压。 一方面，存储电容器和压电换能器是相同的装置。 光器件可以是液晶（LC）层或发光二极管。

公开(公告)号：WO2009125509A1

公开(公告)日：2009-10-15

申请号：PCT/JP2008/069288

申请日：2008-10-17

Applicant: SHARP KABUSHIKI KAISHA ,  AFENTAKIS, Themistokles ,  SPOSILI, Robert, S. ,  VOUTSAS, Apostolos, T.

Inventor： AFENTAKIS, Themistokles ,  SPOSILI, Robert, S. ,  VOUTSAS, Apostolos, T.

IPC: H01L21/336 ,  H01L21/20 ,  H01L29/786

CPC classification number: H01L29/78696 ,  H01L21/02532 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/785

Abstract: A transistor (500) with crystalline semiconductor stripes and an associated fabrication process are provided. The method provides a substrate, and deposits a semiconductor layer overlying the substrate. The semiconductor layer is irradiated using a scanning step-and-repeat laser annealing process, which agglomerates portions of the semiconductor layer. In response to cooling agglomerated semiconductor material, a transistor active semiconductor region (504) is formed including a plurality of crystalline semiconductor stripes (506) oriented along parallel axes (508). In one aspect, a channel region is formed from the plurality of oriented crystalline semiconductor stripes (506), and the method forms a gate dielectric (514) overlying the channel region (518), with a gate electrode (516) overlying the gate dielectric. In another aspect, forming the transistor active semiconductor region (504) includes forming source (520), drain (522), and channel (518) regions from the plurality of oriented crystalline semiconductor stripes (506).

Abstract translation: 提供具有晶体半导体条纹和相关制造工艺的晶体管（500）。 该方法提供衬底，并且沉积覆盖衬底的半导体层。 使用扫描分步重复激光退火工艺照射半导体层，其使半导体层的部分凝聚。 响应于冷却聚集的半导体材料，形成包括沿着平行轴（508）取向的多个晶体半导体条（506）的晶体管有源半导体区（504）。 在一个方面，由多个取向晶体半导体条形成通道区域，该方法形成覆盖沟道区域（518）的栅极电介质（514），栅极电极（516）覆盖栅极电介质 。 在另一方面，形成晶体管有源半导体区域（504）包括从多个取向结晶半导体条（506）形成源极（520），漏极（522）和沟道（518）区域。