公开(公告)号：WO2015094730A1

公开(公告)日：2015-06-25

申请号：PCT/US2014/069002

申请日：2014-12-08

Applicant: SILICON STORAGE TECHNOLOGY, INC.

Inventor： CHEN, Bomy ,  SU, Chien-sheng ,  DO, Nhan

IPC: H01L29/788 ,  H01L29/423 ,  H01L29/66 ,  H01L27/115

CPC classification number: H01L29/42328 ,  G11C16/0408 ,  G11C16/10 ,  H01L21/28238 ,  H01L27/11517 ,  H01L27/11521 ,  H01L29/42336 ,  H01L29/66825 ,  H01L29/7881 ,  H01L29/7889

Abstract: A memory device, and method of making the same, in which a trench is formed into a substrate of semiconductor material. The source region is formed under the trench, and the channel region between the source and drain regions includes a first portion that extends substantially along a sidewall of the trench and a second portion that extends substantially along the surface of the substrate. The floating gate is disposed in the trench, and is insulated from the channel region first portion for controlling its conductivity. The control gate is disposed over and insulated from the channel region second portion, for controlling its conductivity. The erase gate is disposed at least partially over and insulated from the floating gate. Any portion of the trench between the pair of floating gates is free of electrically conductive elements except for a lower portion of the erase gate.

Abstract translation: 存储器件及其制造方法，其中将沟槽形成为半导体材料的衬底。 源极区形成在沟槽下方，并且源极和漏极区域之间的沟道区域包括基本上沿着沟槽的侧壁延伸的第一部分和基本上沿着衬底的表面延伸的第二部分。 浮栅设置在沟槽中，与沟道区第一部分绝缘，以控制其导电性。 控制栅极设置在沟道区第二部分之上并与沟道区第二部分绝缘，以控制其导电性。 擦除栅极至少部分地布置在浮栅上并与浮栅绝缘。 一对浮动栅极之间的沟槽的任何部分除了擦除栅极的下部之外没有导电元件。

公开(公告)号：WO2018182990A1

公开(公告)日：2018-10-04

申请号：PCT/US2018/022720

申请日：2018-03-15

Applicant: SILICON STORAGE TECHNOLOGY, INC.

Inventor： SATO, Justin Hiroki ,  CHEN, Bomy ,  LUNDY, Walter

IPC: H01L21/768 ,  H01L23/488 ,  H01L25/065

Abstract: A method of bonding a first substrate to a second substrate, wherein the first substrate includes first electrical contacts on a top surface of the first substrate, and wherein the second substrate includes second electrical contacts on a bottom surface of the second substrate. The method includes forming a block of polyimide on the top surface of the first substrate, wherein the block of polyimide has a rounded upper corner, and vertically moving the top surface of the first substrate and the bottom surface of the second substrate toward each other until the first electrical contacts abut the second electrical contacts, wherein during the moving, the second substrate makes contact with the rounded upper corner of the polyimide causing the first and second substrates to move laterally relative to each other.