公开(公告)号：WO2006090992A1

公开(公告)日：2006-08-31

申请号：PCT/KR2006/000566

申请日：2006-02-20

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su ,  OH, Se Jung

Inventor： LEE, Byoung Su ,  OH, Se Jung

IPC: H01L27/146

CPC classification number: H01L31/0749 ,  H01L27/14643 ,  H01L31/1808 ,  H01L31/184 ,  Y02E10/541 ,  Y02E10/544 ,  Y02P70/521

Abstract: A method of manufacturing a photodiode for an image sensor which can drastically improve sensitivity compared to silicon-based devices and is advantageous for miniaturization, and a photodiode manufactured thereby. The method of this invention includes (a) applying a photoresist onto a silicon substrate; (b) forming a recess of a predetermined depth in the silicon substrate through exposure and etching; (c) forming a germanium layer in the recess of the silicon substrate formed in step (b); and (d) subjecting the germanium layer formed in step (c) to crystal growth. According to the method of this invention, even though the germanium layer is formed to be thin on the silicon substrate, since germanium has high light absorption efficiency, superior light intensity properties may be exhibited to those of image sensors based on silicon, resulting in sufficiently absorbed light. Further, small image sensors may be manufactured in this invention.

Abstract translation: 一种制造用于图像传感器的光电二极管的方法，其可以显着提高与硅基器件相比的灵敏度，并且有利于小型化，以及由此制造的光电二极管。 本发明的方法包括（a）在硅衬底上施加光致抗蚀剂; （b）通过曝光和蚀刻在硅衬底中形成预定深度的凹槽; （c）在步骤（b）中形成的硅衬底的凹部中形成锗层; 和（d）使步骤（c）中形成的锗层经受晶体生长。 根据本发明的方法，即使在硅衬底上形成锗层较薄，由于锗具有高的光吸收效率，因此可以显示出基于硅的图像传感器的光强度特性优异，导致足够的 吸收光。 此外，在本发明中可以制造小图像传感器。

公开(公告)号：WO2006090993A1

公开(公告)日：2006-08-31

申请号：PCT/KR2006/000567

申请日：2006-02-20

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su ,  OH, Se Jung

Inventor： LEE, Byoung Su ,  OH, Se Jung

IPC: H01L27/14

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L31/109

Abstract: Disclosed herein is an image sensor having a photodiode based on germanium, which has higher sensitivity than image sensors using photodiodes based on silicon, and is manufactured to be small. The image sensor of this invention includes a first conductive silicon substrate having a recess of a predetermined depth, a second conductive doped germanium layer formed through crystal growth in the recess of the first conductive silicon substrate, a first conductive doped silicon layer formed on the first conductive silicon substrate and the second conductive doped germanium layer, second conductive doped silicon layers formed through a doping process to a predetermined depth of the first conductive silicon substrate via the first conductive doped silicon layer, an insulating film layer formed on the first conductive doped silicon layer and the second conductive doped silicon layers, and gate electrodes formed on the insulating film layer. According to this invention, the photodiode using germanium is applied, and thus sensitivity is improved hundreds of times as great as that of a silicon-based device. As well, a silicon substrate is used, whereby considerable portions of conventional silicon-based manufacturing processes may be applied without change.

Abstract translation: 本文公开了一种具有基于锗的光电二极管的图像传感器，其具有比使用基于硅的光电二极管的图像传感器更高的灵敏度，并且被制造得较小。 本发明的图像传感器包括具有预定深度的凹部的第一导电硅衬底，在第一导电硅衬底的凹部中通过晶体生长形成的第二导电掺杂锗层，形成在第一导电硅衬底上的第一导电掺杂硅层 导电硅衬底和第二导电掺杂锗层，通过掺杂工艺通过第一导电掺杂硅层将第二导电掺杂硅层形成到第一导电硅衬底的预定深度，形成在第一导电掺杂硅上的绝缘膜层 层和第二导电掺杂硅层，以及形成在绝缘膜层上的栅电极。 根据本发明，应用了使用锗的光电二极管，因此灵敏度比硅基器件的灵敏度提高了数百倍。 同样，使用硅衬底，由此可以无变化地应用常规硅基制造工艺的相当多的部分。

公开(公告)号：WO2007086649A1

公开(公告)日：2007-08-02

申请号：PCT/KR2006/005266

申请日：2006-12-07

Applicant: SILICONFILE TECHNOLOGIES INC. ,  WON, Jun Ho ,  OH, Se Jung ,  RIM, Jae Young ,  LEE, Byoung Su

Inventor： WON, Jun Ho ,  OH, Se Jung ,  RIM, Jae Young ,  LEE, Byoung Su

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14623 ,  H01L27/1463

Abstract: Provided is an image sensor and a method of manufacturing the same. The image sensor includes anti-reflection films which are formed between a plurality of metal wire lines of the lowest metal wiring layer and a semiconductor substrate and between one of the metal wiring layers and another metal wiring layer. The image sensor having the anti-reflection films according to the present invention can reduce color crosstalk and noises in comparison with a conventional image sensor by using the anti-reflection films formed above the surroundings of the photodiodes.

Abstract translation: 提供了一种图像传感器及其制造方法。 图像传感器包括形成在最下层金属布线层的多根金属布线和半导体基板之间以及一个金属布线层和另一个金属布线层之间的防反射膜。 根据本发明的具有防反射膜的图像传感器可以通过使用形成在光电二极管周围的防反射膜与现有的图像传感器相比来减少颜色串扰和噪声。

公开(公告)号：WO2009066909A3

公开(公告)日：2009-05-28

申请号：PCT/KR2008/006751

申请日：2008-11-17

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H04N5/335

Abstract: Provided is a unit pixel of an image sensor in which photodiodes are arranged in a stacking structure and transfer gates are provided for the respective photodiodes so that signals are sequentially transferred to extract information on a plurality of color components and, by which dark current generated at a substrate surface can be reduced by using a buried-type photodiode. Accordingly, since a buried-type photodiode is used in a unit pixel of an image sensor including a photodiode having a stacking structure, dark current generated by surface detect can be suppressed. In addition, since signals are sequentially transferred through transfer gates for respective photodiodes having a stacking structure, information on a plurality of color components can be extracted without having to use complex peripheral circuits.

公开(公告)号：WO2009066896A1

公开(公告)日：2009-05-28

申请号：PCT/KR2008/006624

申请日：2008-11-10

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: G01N33/533 ,  H01L31/10 ,  H01L27/146 ,  G01N33/50

CPC classification number: H01L27/14625 ,  G01N21/6454 ,  G01N2021/6471 ,  H01L27/14621 ,  H01L27/14627

Abstract: Disclosed is a fluorescent biochip diagnosis device including: an image sensor having a plurality of photo-detectors; and a band-pass filter unit having a plurality of band-pass filters formed on a plurality of the photo-detectors, wherein a plurality of the band-pass filters are implemented by forming a nanostructure pattern in a metal layer. Since the fluorescent biochip diagnosis device has little optical loss due to a short interval between the biochip and the photo-detector, excellent sensitivity can be provided. Also, since signals can be simultaneously measured by combining light beams having a short wavelength used as an illumination depending on a type of a fluorescent protein material, cost of the diagnosis device and a diagnosis time can be reduced.

Abstract translation: 公开了一种荧光生物芯片诊断装置，包括：具有多个光检测器的图像传感器; 以及具有形成在多个光检测器上的多个带通滤波器的带通滤波器单元，其中通过在金属层中形成纳米结构图案来实现多个带通滤波器。 由于荧光生物芯片诊断装置由于生物芯片和光电检测器之间的间隔小而具有很小的光学损失，因此可以提供极好的灵敏度。 此外，由于可以根据荧光蛋白质材料的种类组合用作照明的短波长的光束同时测量信号，所以可以降低诊断装置的成本和诊断时间。

公开(公告)号：WO2008150139A1

公开(公告)日：2008-12-11

申请号：PCT/KR2008/003191

申请日：2008-06-09

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L27/14

CPC classification number: H01L27/14667 ,  H01L27/14627

Abstract: Provided is a stacked image sensor. Particularly, provided are a stacked image sensor including a photosensitive element portion having a photo-conductive thin film on an upper portion of a wafer where a peripheral circuit is formed and a method of manufacturing the stacked image sensor. In the stacked image sensor according to the present invention, since a wafer where a circuit is formed and a photosensitive element portion are formed in a stacked structure, a whole size of the image sensor can be reduced, and there is no optical crosstalk due to absorption of incident light to adjacent pixels. In addition, since a photo-conductive element having a high light absorbance is used, a high photo-electric conversion efficiency can be obtained. In addition, in the method of manufacturing a stacked image sensor according to the present invention, since the upper photosensitive element can be formed by using a simple low-temperature process, a production cost can be reduced.

Abstract translation: 提供了一种堆叠图像传感器。 特别地，提供了一种堆叠图像传感器，其包括在形成外围电路的晶片的上部上具有光导薄膜的感光元件部分和制造叠层图像传感器的方法。 在根据本发明的堆叠式图像传感器中，由于形成了电路的晶片和形成有层叠结构的感光元件部分，所以能够减小图像传感器的整体尺寸，并且由于 将入射光吸收到相邻像素。 此外，由于使用具有高吸光度的光导体元件，因此可以获得高的光电转换效率。 此外，在根据本发明的层叠图像传感器的制造方法中，由于可以通过使用简单的低温处理来形成上部感光元件，所以可以降低制造成本。

公开(公告)号：WO2008136634A1

公开(公告)日：2008-11-13

申请号：PCT/KR2008/002547

申请日：2008-05-07

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/148

Abstract: The present invention relates to a unit pixel of an image sensor having a large area photodiode with high sensitivity, and more particularly, to a unit pixel of an image sensor having a high sensitivity photodiode which includes a plurality of transfer gates on the photodiode having a large area to effectively transfer photocharges generated at the photodiode to a floating diffusion region.

Abstract translation: 本发明涉及具有高灵敏度的大面积光电二极管的图像传感器的单位像素，更具体地，涉及具有高灵敏度光电二极管的图像传感器的单位像素，该灵敏度光电二极管在光电二极管上包括多个传输门， 大面积以有效地将在光电二极管处产生的光电荷转移到浮动扩散区域。

公开(公告)号：WO2006123881A1

公开(公告)日：2006-11-23

申请号：PCT/KR2006/001817

申请日：2006-05-16

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/103 ,  Y02E10/547

Abstract: A photodiode for an image sensor having an improved light sensitivity and decrease in size over a silicon-based photodiode and a manufacturing method of the photodiode are provided. The photodiode for the image sensor has a silicon-germanium alloy layer, which contains germanium of 0.1 to 15 wt% with respect to a weight of silicon-germanium alloy, formed on a silicon substrate and a photodioderegion formed on the silicon-germanium alloy layer. Since the light absorbance of germanium is high, the photodiode in which a relatively thin silicon- germanium alloy layer is formed has a superior property of optical sensing to a conventional silicon-based image sensor. Accordingly, the silicon-germanium alloy layer thinner than a silicon layer used in a conventional image sensor can be used for absorbing sufficient light so as to decrease in size of the image sensor using the photodiode. In addition, it is possible to operate the photodiode at a high speed due to rapid transport of charges in the silicon-germanium alloy layer.

Abstract translation: 提供了一种用于具有改善的光敏度和相对于硅基光电二极管的尺寸减小的图像传感器的光电二极管以及光电二极管的制造方法。 用于图像传感器的光电二极管具有硅 - 锗合金层，其包含相对于在硅衬底上形成的硅 - 锗合金重量为0.1至15重量％的锗和形成在硅 - 锗合金层上的光电二极管 。 由于锗的吸光度高，因此形成相对较薄的硅 - 锗合金层的光电二极管具有优异的光学感测性能与传统的硅基图像传感器。 因此，比传统图像传感器中使用的硅层薄的硅 - 锗合金层可以用于吸收足够的光，从而减小使用光电二极管的图像传感器的尺寸。 此外，由于硅 - 锗合金层中的电荷的快速传输，可以高速操作光电二极管。

公开(公告)号：WO2009066894A2

公开(公告)日：2009-05-28

申请号：PCT/KR2008/006603

申请日：2008-11-10

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L27/14643

Abstract: The present invention relates to a technology for reducing dark current noise by discharging electrons accumulated on a surface of an image sensor photodiode. In an N-type or P-type photodiode, a channel is formed between the photodiode and a power voltage terminal, so that electrons (or holes) accumulated on a surface of the photodiode are discharged to the power voltage terminal through the channel.

Abstract translation: 本发明涉及通过放电积累在图像传感器光电二极管的表面上的电子来减少暗电流噪声的技术。 在N型或P型光电二极管中，在光电二极管和电源电压端子之间形成通道，使得积聚在光电二极管表面的电子（或空穴）通过通道被排放到电源电压端子。

公开(公告)号：WO2009001988A1

公开(公告)日：2008-12-31

申请号：PCT/KR2007/005147

申请日：2007-10-19

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su ,  LEE, Do Young

Inventor： LEE, Byoung Su ,  LEE, Do Young

IPC: G01N33/533

CPC classification number: G01N21/6454 ,  B01L3/5085 ,  B01L2300/0654 ,  B01L2300/0829

Abstract: A diagnosis device using an image sensor and a method of manufacturing the same are provided. The diagnosis device using the image sensor includes: a substrate in which an image sensor including a plurality of optical sensors is formed; an insulation layer formed on the substrate; and a plurality of wells formed in the insulation layer in correspondence with the plurality of optical sensors, the plurality of wells into which reference samples for biochemical reactions with a target sample are inserted.

Abstract translation: 提供了使用图像传感器的诊断装置及其制造方法。 使用图像传感器的诊断装置包括：形成有包括多个光学传感器的图像传感器的基板; 形成在所述基板上的绝缘层; 以及与所述多个光学传感器对应地形成在所述绝缘层中的多个阱，所述多个孔插入其中插入用于与目标样品进行生物化学反应的参考样品。